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Laboratoire de recherche
UMR 6602 - UCA/CNRS/SIGMA

Annuaire

Monier Guillaume


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Fonction : Personnel technique (Permanent Ip)
Axe : Photon
Thème : Minamat
Téléphone : +33473407118
Fax : +33 4 7340 7340



Publications associées :
90 publication trouvées


2016
ACL
TRASSOUDAINE A., ROCHE E., BOUGEROL C., ANDRE Y., AVIT G., MONIER G., RAMDANI M., GIL E., CASTELLUCI D., DUBROVSKII V.
Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy



MAHJOUB M., MONIER G., ROBERTGOUMET C., REVERET F., ECHABAANE,D.CHAUDANSON M., PETIT M., BIDEUX L., GRUZZA B.
Synthesis and Study of Stable and Size-Controlled ZnO-SiO2 Quantum Dots: Application as Humidity Sensor



OS
DONG Z., ANDRE Y., DUBROVSKII V., BOUGEROL C., MONIER G., RAMDANI R., TRASSOUDAINE A., LEROUX C., CASTELLUCI D., GIL E.
Laser Optics (LO), 2016 International Conference



ACTI
H.KACHA A., AKKAL B., BENAMARA Z., ROBERTGOUMET C., MONIER G., GRUZZA B.
Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method



KACHA A., AKKAL B., BENAMARA Z., ROBERTGOUMET C., MONIER G., GRUZZA B.
Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method



COM
TOMASELLA E., BACHAR A., BOUSQUET A., ROBERTGOUMET C., MONIER G., .THOMAS L., BELMAHI M., GOULLET A., CELLIER J., SAUVAGE T.
SiCxNy:H thin films deposited by plasma processes: opportunity as optical coatings for PV applications



AFF
MEHDI H., MONIER G., ROBERTGOUMET C., BACHAR A., BOUSQUET A., TOMASELLA E.
X-ray Photoelectron Spectroscopy (XPS) investigation of SiCxNy:H thin films on Si elaborated by PVD : atomic composition study



2015
ACL
KACHA A., AKKAL B., BENAMARA Z., AMRANI M., RABHI A., MONIER G., ROBERTGOUMET C., BIDEUX L., GRUZZA B.
Effects of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs



MAHJOUB M., MONIER G., ROBERTGOUMET C., BIDEUX L., GRUZZA B.
XPS combined with MM-EPES technique for in situ study of ultra thin film deposition: application to an Au/SiO2/Si structure



INV
ROBERTGOUMET C., MAHJOUB M., MONIER G., BIDEUX L., GRUZZA B.
MM-EPES : Non destructive method for thin films analysis. Applications to Si nanoporous surfaces and Au deposits on SiO2/Si



COM
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., DISSEIX P., DUBROVSKII V., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., LEYMARIE J., MEDARD F., MONIER G., RAMDANI M., REVERET F., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy



MONIER G., MEDHI H., ROBERTGOUMET C., VINCENTRAYES J., BOUSQUET A., TOMASELLA E.
Growth of SiCN:H thin films on Si by PVD for antireflective coating: atomic composition and optical study.



MAHJOUB M., ROBERTGOUMET C., MONIER G., BIDEUX L., GRUZZA B.
New method for the determination of the correction function - Application for an ultimate resolution in the quantitative study of electron spectroscopies



TOMASELLA E., BOUSQUET A., VINCENTRAYES J., VOGT A., AZDAD Z., CELLIER J., SAUVAGE T., MEDHI H., MONIER G., ROBERTGOUMET C.
Plasma investigation of reactive sputtering discharge used for SiCN:H thin film depositions. Correlation with structural and optical properties



AFF
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., DISSEIX P., DUBROVSKII V., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., LEYMARIE J., MEDARD F., MONIER G., RAMDANI M., REVERET F., TRASSOUDAINE A.
(In,Ga)N nanostructures grown by Hydride Vapor Phase Epitaxy



MAHJOUB M., ROBERTGOUMET C., MONIER G., BIDEUX L., GRUZZA B.
Determination of gold quantity deposited on silicon substrates by elastic electron measurements associated with Monte Carlo simulations and XPS measurements



MONIER G., ROBERTGOUMET C., MAHJOUB M., PAULY N., TOUGGARD S.
Influence of surface and core hole effects for quantitative X-ray photoelectron spectroscopy by peak shape analysis



H.KACHA A., AKKAL B., BENAMARA Z., ROBERTGOUMET C., MONIER G., GRUZZA B.
Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method



A.MAHJOUB M., MONIER G., ROBERTGOUMET C., REVERET F., BIDEUX L., GRUZZA B.
Synthesis of stable and size-controlled ZnO-Si02 quantum dots : relation between chemical composition and strong visible emission



MAHJOUB M., MONIER G., ROBERTGOUMET C., REVERET F., BIDEUX L., GRUZZA B.
Synthesis of stable and size-controlled ZnO-SiO2 quantum dots: relation between chemical composition and strong visible emission  



MAHJOUB M., MONIER G., ROBERTGOUMET C., BIDEUX L., GRUZZA B.
XPS and MM-EPES techniques combined for the study of ultra thin films: Application to gold deposition on SiO2/Si structures



2014
ACL
PAULY N., DUBUS A., MONIER G., ROBERTGOUMET C., MAHJOUB M., BIDEUX L., GRUZZA B.
Energy dependence of the energy loss function parametrization of indium in the Drude-Lindhard model



MAHJOUB M., MONIER G., ROBERTGOUMET C., BIDEUX L., GRUZZA B.
New method for the determination of the correction function of a hemisperical electron analyser based on elastic electron images



GIL E., DUBROVSKII V., AVIT G., ANDRE Y., LEROUX C., LEKHAL K., GRECENKOV J., TRASSOUDAINE A., CASTELLUCI D., MONIER G., RAMDANI M., ROBERTGOUMET C., BIDEUX L., HARMAND J., GLAS F.
Record pure zincblende phase in GaAs nanowires down to 5 nm in radius



AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultra-long and defect-free GaN nanowires grown by the HVPE process



ANDRE Y., LEKHAL K., HOGGAN P., AVIT G., CADIZ F., ROWE A., PAGET D., PETIT E., LEROUX C., TRASSOUDAINE A., REDARAMDANI M., MONIER G., COLAS D., AJIB R., CASTELLUCI D., GIL E.
Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation



ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure



COM
TRASSOUDAINE A., REDARAMDANI M., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., DOMINIQUE C.
Fast growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy.



TRASSOUDAINE A., REDARAMDANI M., ANDRE Y., AVIT G., ROCHE E., GAYRAL B., BOUGEROL C., FERRET P., GIL E., REVERET F., LEYMARIE J., MONIER G., DOMINIQUE C.
HVPE novel potential for the synthesis of nitride nanostructures.



2013
ACL
ROBERTGOUMET C., MAHJOUB M., MONIER G., BIDEUX L., CHELDA S., DUPUIS R., PETIT M., HOGGAN P., GRUZZA B.
Development of Monte-Carlo simulations for nano-patterning surfaces associated with MM-EPES analysis – Application to different Si(111) nanoporous surfaces.



PAGET D., BERKOVITS V., ULIN V., OZANAM F., DUMAS P., KUBSKY S., LAHLIL K., BIDEUX L., MONIER G.
Real time infra red absorption analysis of nitridation of GaAs(001) by hydrazine sulfide solutions



TALBI A., BENAMARA M., TALBI M., BENAMARA Z., AKKAL B., GRUZZA B., ROBERTGOUMET C., BIDEUX L., MONIER G.
Study of InP(100)nitridation using AES spectroscopy and electrical analysis: Effect of annealing after nitridation



ACTI
ANDRE Y., AVIT G., LEKHAL K., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., MICHAUD P., FONTANILLE P., PIERRE G., PAGET D., ROWE A., PETIT E., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications



COM
ANDRE Y., TRASSOUDAINE A., AVIT G., GIL E., BOUGEROL C., LEKHAL K., REVERET F., LEYMARIE J., VARENNE C., MONIER G., CASTELLUCI D.
GaN nanostructures and nanowires with exceptional lengths and great optical and crystallographic properties grown by Hydride Vapor Phase Epitaxy (HVPE)



MONIER G., BIEDUX L., ROBERTGOUMET C., GRUZZA B., ANDRE Y., AVIT J., PETIT M., LABAR J., MENYHARD M., PAGET D., SUBSKY S.
High quality c-GaN ultra-thin film growth on GaAs (001) : Passivating effect and initiation of cubic-GaN bulk structure growth



ANDRE Y., AVIT G., GIL E., TRASSOUDAINE A., BOUGEROL C., GAYRAL B., LEROUX C., DUBROVSKII V., VARENNE C., MONIER G., REVERET F., LEYMARIE J., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of III-V semiconductor nanostructures and nanowires



ANDRE Y., AVIT G., LEKHAL K., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., FONTANILLE P., PIERRE G., PAGET D., ROWE A., PETIT E., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications



ROBERTGOUMET C., MONIER G., BIDEUX L., GRUZZA B.
New approach of Monte Carlo simulation for Elastic Peak Electron Spectroscopy Application to electronic microscopy: the MM-EPEM



AFF
MAHJOUB M., ROBERTGOUMET C., MONIER G., BIDEUX L., GRUZZA B.
Determination of the collection angle of an Hemispherical Analyzer (HSA) by EPES measurements and Monte Carlo simulations



AVIT G., AJIB R., ANDRE Y., GIL E., TRASSOUDAINE A., LEKHAL K., LEROUX C., BOUGEROL C., HOGGAN P., MONIER G., VARENNE C., REVERET F., CASTELLUCI D.
HVPE of III-V long nanowires; growth physics and properties



AVIT G., ANDRE Y., DUBROVSKII V., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., REVERET F., HOGGAN P., CASTELLUCI D., GLAS F., PAGET D.
Hydride VPE growth of III-V nanowires: growth properties, crystal structure



AVIT G., LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., REVERET F., CASTELLUCI D.
Hydride Vapor Phase Epitaxy: a highly efficient tool for the synthesis of great quality GaN based material on sapphire and silicon



2012
ACL
PETIT M., DAU M., MONIER G., MICHEZ L., BARRE X., SPIESSER A., LETHANTH V., GLACHANT A., COUDREAU C., BIDEUX L., ROBERTGOUMET C.
Carbon Diffusion And Reactivity In Mn5ge3 Thin Films



AVIT G., LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., VARENNE C., BOUGEROL C., MONIER G., CASTELLUCI D.
Catalyst-assisted Hydride Vapor Phase Epitaxy of GaN nanowires: exceptional length and constant rod like shape capability



VARENNE C., NDIAYE A., BRUNET J., SPINELLE L., MONIER G., PAULY A., BIDEUX L., LAURON B., ROBERTGOUMET C.
Comparison Of Inp Schottky Diodes Based On Au Or Pd Sensing Electrodes For No2 And O3 Sensing



MONIER G., BIDEUX L., ROBERTGOUMET C., GRUZZA B., PETIT M., LABAR J., MENYHARD M.
Passivation of GaAs (001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source



COM
GIL E., ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., ROBERTGOUMET C., CASTELLUCI D., BIDEUX L.
Catalyst-assisted Hydride Vapour Phase Epitaxy of III-V nanowires: exceptional length, constant rodlike shape and defect-free crystal capability



ANDRE Y., LEKHAL K., AVIT G., TRASSOUDAINE A., GIL E., BOUGEROL C., VARENNE C., REVERET F., CASTELLUCI D., MONIER G., BIDEUX L.
Catalyst-free and catalyst-assisted hydride vapour phase epitaxy growth of GaN nanowires



2011
ACL
BRUNET J., SPINELLE L., NDIAYE A., DUBOIS M., MONIER G., VARENNE C., PAULY A., LAURON B., GUERIN K., HAMWI A.
Physical and chemical characterizations of nanometric indigo layers as efficient ozone filter for gas sensor devices.



AMEUR K., MAZARI H., TIZI S., KHELIFI R., BENAMARA Z., BENSEDDIK N., CHAIB A., ZOUGAGH,M.MOSTEFAOUI N., BIDEUX L., MONIER G., GRUZZA B., ROBERTGOUMET C.
Study of the Characteristics Current–Voltage and Capacity–Voltage of Hg/GaN/GaAs Structures



ZOUGAGH N., BENAMARA Z., MAZARI H., BENSEDDIK N., AMEUR K., MONIER G., BIDEUX L., GRUZZA B.
The dc electrical characterization of Hg/GaN/n-GaAs devices with different thicknesses of the GaN thin layers



COM
LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., VARENNE C., MONIER G., CASTELLUCI D., BIDEUX L.
HVPE and VLS-HVPE synthesis of GaN nanowires and nanostructures



AFF
ROBERTGOUMET C., CHELDA S., BIDEUX L., MONIER G., GRUZZA B.
Sensitivity of EPES measurements combined with Monte Carlo simulations : Application on Si(111) nanoporous surfaces



MONIER G., BIDEUX L., GRUZZA B., ROBERTGOUMET C.
Study of high quality GaN epilayers formation on GaAs(001) using low power GDS nitrogen plasma source



THE
MONIER G.
NANOSTRUCTURATION DE SURFACE DE GaAs : OXYDATION ET NITRURATION



MONIER G.
Nanostructuration de surface de GaAs : oxydation et nitruration



2010
ACL
RAMDANI M., GIL E., LEROUX C., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., BIDEUX L., MONIER G., ROBERTGOURMET C., KULKA R.
Fast Growth Synthesis of GaAs Nanowires with Exceptional Length



MANCEAU M., GAUME J., RIVATON A., GARDETTE J., MONIER G., BIDEUX L.
Further insights into the photodegradation of poly(3-hexylthiophene) by means of Xray photoelectron spectroscopy



GRUZZA B., CHELDA S., ROBERTGOUMET C., BIDEUX L., MONIER G.
Monte Carlo simulation for Multi-Mode Elastic Peak Electron Spectroscopy of crystalline materials: Effects of surface structure and excitation



FLORI M., GRUZZA B., BIDEUX L., MONIER G., ROBERTGOUMET C., KRAWCZYK M.
Surface analysis of a plasma-nitrided structural steel



COM
GRUZZA B., CHELDA S., ROBERTGOUMET C., MONIER G., BIDEUX L.
Spectroscopie du pic élastique (EPES) et méthode de Monte-Carlo associée



2009
ACL
BENAMARA Z., MECIRDI N., AKKAL B., MAZARI H., CHELLALI M., GRUZZA B., BENKHALIFA S., ROBERTGOUMET C., MONIER G., BIDEUX L.
Electrical characterization and electronic transport modelization in the InN/InP structures



FLORI M., GRUZZA B., BIDEUX L., MONIER G., ROBERTGOUMET C., BENAMARA Z.
First stages of surface steel nitriding: X-ray photoelectron spectroscopy and electrical measurements



DESPLATS O., GALLO P., DOUCET J., MONIER G., BIDEUX L., JALABERT L., ARNOULT A., LACOSTE G., ARMAND C., VOILLOT F., FONTAINE C.
On the use of a O-2:SF6 plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth



ROBERTGOUMET C., MONIER G., ZEFACK B., CHELDA S., BIDEUX L., GRUZZA B., AWITOR O.
SEM and XPS studies of nanohole arrays on InP(100) surfaces created by coupling AAO templates and low energy Ar+ ion sputtering



MONIER G., BIDEUX L., DESPLATS O., FONTAINE C., ROBERTGOUMET C., GRUZZA B.
XPS study of the O2/SF6 microwave plasma oxidation of (0 0 1) GaAs surfaces



COM
GRUZZA B., ROBERTGOUMET C., MONIER G., BIDEUX L.
Nitride passivation and nanotransformation of GaAs and InP surfaces



AFF
CHELDA S., ROBERTGOUMET C., GRUZZA B., MONIER G., BIDEUX L.
A New Approach Of Monte Carlo Simulation For Epes Spectroscopy ? Influence Of The Atomic Planes And The Sep.



ROBERTGOUMET C., KOMLAAWITOR O., MONIER G., ZEFACK B., BIDEUX L., GRUZZA B., CHELDA S.
Feasibility study of nanohole arrays on InP(100) and GaAs(100) surfaces by coupling AAO templates and low energy Ar+ sputtering. SEM and XPS studies.



MONIER G., BIDEUX L., GRUZZA B., ROBERTGOUMET C.
Nano-structuration of III-V compounds surfaces- Application to nitridation and gas sensors



2008
ACL
CHELDA S., ROBERTGOUMET C., GRUZZA B., BIDEUX L., MONIER G.
Effect of surface roughness on EPES and AREPES measurements: Flat and crenels silicon surfaces



FLORI M., GRUZZA B., BIDEUX L., MONIER G., ROBERTGOUMET C.
Study of the 42CrMo4 steel surface by quantitative XPS electron spectroscopy



BIDEUX L., MONIER G., MATOLIN V., ROBERTGOUMET C., GRUZZA B.
XPS study of the formation of ultrathin GaN film on GaAs(100)



FLORI M., GRUZZA B., BIDEUX L., MONIER G., ROBERTGOUMET C., CHERRE J., DEBAYNAST H.
XPS, EPMA and microstructural analysis of a defective industrial plasma-nitrided steel



COM
RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BIDEUX L., MONIER G., ROBERTGOUMET C., LEROUX C.
HVPE process : an effective tool for the bottom-up shaping of micro- and nano-objects with controlled morphology



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BODIN A., LEROUX C., BIDEUX L., MONIER G., AWITOR O., ROBERTGOUMET C., KUPKA R.
High aspect ratio GaAs nanowires grown by Hydride Vapor Phase Epitaxy



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BIDEUX L., MONIER G., ROBERTGOUMET C., LEROUX C., FONTAINE C.
Selective growth of III-V nanowires and micro- nano- objects by HVPE



AFF
CHELDA S., ROBERTGOUMET C., GRUZZA B., BIDEUX L., MONIER G.
Etude de l’effet de la rugosité de surface sur les mesures EPES et AREPES



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BODIN A., LEROUX C., BIDEUX L., MONIER G., AWITOR O., ROBERTGOUMET C., KUPKA R.
VLS-HVPE : a tool for the synthesis of lengthy semiconductor nanowires



2007
ACL
ROBERTGOUMET C., PETIT M., BIDEUX L., GRUZZA B., MONIER G., MATOLIN V., SKALA T., TSUD N., PRINCE K.
Combined EELS, LEED and SR-XPS study of ultra-thin crystalline layers of indium nitride on InP(100) - Effect of annealing at 450 degrees C



KRAWCZYK M., BILINSKI A., SOBCZAK J., BENKHALIFA S., ROBERTGOUMET C., BIDEUX L., GRUZZA B., MONIER G.
Interaction of hydrogen with InN thin films elaborated on InP(100)



BENKHALIFA S., GRUZZA B., ROBERTGOUMET C., BIDEUX L., MONIER G., SAIDI F., MGHAIETH R., HJIRI M., HAMILA R., HASSEN F., MAAREF H., BREMOND G., BEJI L.
Study of porous III–V semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL): Effect of ionic bombardment and nitridation process



ACTI
KRAWCZYK M., BILINISKI A., SOBCZAK J., EN B., KHALLFA S., ROBERTGOURNET C., BIDEUX L., GRUZZA B., MONIER G.
Interaction of hydrogen with InN thin films elaborated on InP(100)



KHALIFA S., GRUZZA B., ROBERTGOUMET C., BIDEUX L., MONIER G., SAIDI F., M'GHAIETH R., HJIRI M., HAMILA R., HASSEN F., MAAREF H., BREMOND G., BEJI L.
Study of porous III-V semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL): Effect of ionic bombardment and nitridation process



AFF
GRUZZA B., ROBERTGOUMET C., BENKHALIFA S., MONIER G., BIDEUX L., AWITOR O., ZUBER S., MAZUR P.
Evolution des surfaces d’InP(100) bombardées ioniquement et nitrurées – Etude Auger et AFM/STM



BIDEUX L., ROBERTGOUMET C., AWITOR O., GRUZZA B., MONIER G., DEVERS T., KEAY J., JOHNSON M.
Realisation of self-organised nanopores on InP and GaAs : growth of InN/InP(100) and GaN/GaAs(100) dots



ROBERTGOUMET C., AWITOR O., GRUZZA B., BIDEUX L., MONIER G., DEVERS T., VAYER J.C.KEAY,M.B.JOHNSON M.
Réalisation de micro et nanopores auto-organisés sur des surfaces d’InP(100) : première étape d’élaboration de boites InN enfouies



2006
RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BIDEUX L., MONIER G., ROBERTGOUMET C., LEROUX C., FONTAINE C.
Croissance sélective HVPE à morphologie contrôlée à l'échelle sub-micrométrique et nanométrique de semiconducteurs III-V



ROBERTGOUMET C., PETIT M., BIDEUX L., GRUZZA B., MONIER G.
Etude par spectroscopies électroniques (SR-XPS, EELS) du recuit de films ultra-minces d'InN sur substrats d'InP(100)



BENKHALIFA S., ROBERTGOUMET C., BIDEUX L., MONIER G., GRUZZA B., .SAIDI F., MGHAIETH R., .HJIRI M., .HAMILA R., .HASSEN F., .MAAREF H., .BREMOND G., .BEJI L.
Study of porous III-V Semiconductors by electron spectroscopy (AES and XPS) and optical spectroscopy(PL) - Effect of ionic bombardment and nitridation process





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