Langues

Laboratoire de recherche
UMR 6602 - UCA/CNRS/SIGMA

Annuaire

Cadoret Robert


Photo
Fonction : Professeur emérite (Permanent Ip)
Axe : Photon
Thème : Minamat
Téléphone : +33473405449
Fax : +33 4 7340 7340



Publications associées :
33 publication trouvées


2015
OS
GIL E., ANDRE Y., CADORET R., TRASSOUDAINE A.
Hydride Vapor Phase Epitaxy for current III-V and nitride semiconductor compound issues



2012
ACL
ANDRE Y., TRASSOUDAINE A., GIL E., LEKHAL K., GOURMALACHELDA O., CASTELLUCI D., CADORET R.
Demonstration of crystal-vapor equilibrium leading to a growth blockade of GaN during selective area growth



2010
CHELDAGOURMALA O., TRASSOUDAINE A., ANDRE Y., BOUCHOULE S., GIL E., TOURRET J., CASTELLUCI D., CADORET R.
Complete HVPE experimental investigations : cartography of SAG GaN towards quasi-substrates or nanostructures



2009
TOURRET J., GOURMALA O., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)



2008
ACTI
TOURRET J., GOURMALA O., TRASSOUDAINE A., ANDRE Y., GIL E., CASTELLUCI D., CADORET R.
Low-cost high-quality GaN by one-step growth



COM
GOURMALA O., TRASSOUDAINE A., ANDRE Y., TOURRET J., CASTELLUCI D., CADORET R., GIL E.
Experimental conditions influence on growth rate and quality of GaN layers by standard and ELO HVPE



AFF
CHELDAGOURMALA O., TOURRET J., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
Experimental conditions influence on growth rate and quality of GaN layers by SAG and ELO HVPE



GOURMALA O., TOURRET J., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
Étude cristallographique et physique de la croissance sélective HVPE de GaN



2007
ACL
ANDRE Y., TRASSOUDAINE A., TOURRET J., CADORET R., GIL E., CASTELLUCI D., AOUDE O., DISSEIX P.
Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers



COM
TOURRET J., GOURMALA O., TRASSOUDAINE A., ANDRE Y., GIL E., CASTELLUCI D., CADORET R.
Low cost high quality GaN by one step growth



AFF
GOURMALA O., TOURRET J., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
Carrier gas composition, growth temperature and III/V ratio variation for ELO GaN grown by HVPE



GOURMALA O., TOURRET J., TRASSOUDAINE A., ANDRE Y., CADORET R., CASTELLUCI R., GIL E.
The Optimisation of a 2” HVPE Reactor For High Quality Thick GaN Layers



2004
ACL
TRASSOUDAINE A., CADORET R., GIL E.
Temperature influence on the growth of gallium nitride by HVPE in a mixed H-2/N-2 carrier gas



2003
GIL E., NAPIERALA J., PIMPINELLI A., CADORET R., TRASSOUDAINE A.
Direct condensation modelling for a two-particle growth system : application to GaAs grown by hydride vapour phase epitaxy



PIMPINELLI A., CADORET R., GIL E., TRASSOUDAINE A.
Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces



2001
GIL E., NAPIERALA J., CASTELLUCI D., PIMPINELLI A., CADORET R., GERARD B.
Selective growth of GaAs by HVPE : keys for accurate control of the growth morphologies



AUJOL E., NAPIERALA J., TRASSOUDAINE A., GIL E., CADORET R.
Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen



1999
GOUMET E., GIL E., CADORET R., CASTELLUCI D., LEYMARIE J., VASSON A., BIDEUX L., GRUZZA B.
Epitaxial growth of InAs(x)P(1-x)/InP quantum wells by Hydride Vapour Phase Epitaxy



TRASSOUDAINE A., AUJOL E., DISSEIX P., CASTELLUCI D., CADORET R.
Experimental and theoretical study of the growth of GaN on sapphire by HVPE



1998
TRASSOUDAINE A., PARILLAUD O., GOUMET E., CASTELLUCI D., GIL E., CADORET R.
Kinetic study of Si incorporation in InP by the Hydride Vapour Phase Epitaxy



1997
CADORET R., GIL E.
GaAs growth mechanisms of exact and misoriented *001* faces by the chloride method in H2 : surface diffusion, spiral growth, HCl and GaCl3 desorption mechanisms



1995
GIL E., PIFFAULT N., CADORET R.
Kinetic expression and study of the growth rate of mismatched (Ga,In)As / InP structures grown by Hydride Vapour Phase Epitaxy



ACTI
PARILLAUD O., GERARD B., BISARO R., LEYMARIE J., PIFFAULT N., GIL E., CASTELLUCI D., GOUMET E., VASSON A., VASSON A., PRIBAT D., CADORET R.
Low defect density InP films grown on Si by HVPE using a new crystal refining technique



1994
ACL
PIFFAULT N., GIL E., LEYMARIE J., CLARK S., ANDERSON M., CADORET R., VASSON A.
Epitaxial growth and kinetic study of mismatched (Ga,In)As / InP layers grown by hydride vapour phase epitaxy



ACTI
PIFFAULT N., PARILLAUD O., GIL E., LEYMARIE J., VASSON A., VASSON A., CADORET R., GERARD B., PRIBAT D.
Assessment of the strain of InP films on Si obtained by HVPE conformal growth



PARILLAUD O., PIFFAULT N., GIL E., CADORET R., GERARD B., PRIBAT D.
Defect free InP films on Si substrates obtained by hydride vapor phase conformal growth



1993
ACL
DISSEIX P., LEYMARIE J., VASSON A., BANVILLET H., GIL E., PIFFAULT N., CADORET R.
Photoluminescence studies in strained InAs/InP quantum wells grown by hydride vapor phase epitaxy



1991
GIL E., BANVILLET H., PIFFAULT N., CADORET R., FERDJANI K., LEYMARIE J., VASSON A., VASSON A., TABATA A., BENYATTOU T., GUILLOT G.
InAs/InP Strained Quantum Wells growth by Hydride Vapor Phase Epitaxy and photoluminescence studies



BANVILLET H., GIL E., CADORET R., DISSEIX P., FERDJANI K., VASSON A., TABATA A., BENYATTOU T., GUILLOT G.
Optical investigation in ultra-thin InAs/InP Quantum Wells grown by Hydride Vapor Phase Epitaxy



MIHAILOVIC M., BANVILLET H., GRUZZA B., GIL E., CADORET R.
Transient stages during epitaxy of heterostructures on InP in a H. V. P. E. reactor. Application to InP/InAs/InP multiquantum wells growth



ACTI
LEYMARIE J., MIHAILOVIC M., GIL E., PIFFAULT N., VASSON A., VASSON A., TABATA A., BENYATTOU T., GUILLOT G., CADORET R.
InAs/InP strained quantum wells grown by Hydride Vapor Phase Epitaxy and studied by photoluminescence



1990
ACL
MIHAILOVIC M., CADORET M., BANVILLET H., GIL E., CADORET R.
Epitaxial Growth of InP/InAs/InP Quantum Wells



ACTI
BANVILLET H., GIL E., VASSON A., CADORET R., TABATA A., BENYATTOU T., GUILLOT G.
Epitaxial growth and photoluminescence investigations of InP/InAs Quantum Wells grown by Hydride Vapor Phase Epitaxy





<-- retour à l'annuaire