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UMR 6602 - UCA/CNRS/SIGMA

Annuaire

Reveret François


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Fonction : Personnel technique (Permanent Ip)
Axe : Photon
Thème : N2
Téléphone : +33473407346
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Publications associées :
69 publication trouvées


2016
ACL
REVERET F., BIGNET L., ZHIGANG W., LAFOSSE X., PATRIARCHE G., DISSEIX P., MEDARD F., MIHAILOVIC M., LEYMARIE J., ZUNIGAPEREZ J., BOUCHOULE S.
High reflectance dielectric distributed Bragg reflectors for near ultra-violet 2 planar microcavities: SiO2/HfO2 versus SiO2/SiNx



ZUNIGAPEREZ J., KAPPEI L., DEPARIS C., REVERET F., GRUNDMANN M., L.DEPRADO E., JAMADI O., LEYMARIE J., CHENOT S., LEROUX M.
Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: towards reduced photonic disorder



JAMADI O., REVERET F., MALLET E., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., LAFOSSE X., BOUCHOULE S., LI F., LEROUX M., SEMOND F., ZUNIGAPEREZ J.
Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO



FARHAOUI A., BOUSQUET A., SMAALI R., MOREAU A., CENTENO E., CELLIER J., BERNARD C., RAPEGNO R., REVERET F., TOMASELLA E.
Reactive gas pulsing sputtering process, a promising technique to elaborate silicon oxynitride multilayer nanometric antireflective coatings



MAHJOUB M., MONIER G., ROBERTGOUMET C., REVERET F., ECHABAANE,D.CHAUDANSON M., PETIT M., BIDEUX L., GRUZZA B.
Synthesis and Study of Stable and Size-Controlled ZnO-SiO2 Quantum Dots: Application as Humidity Sensor



COM
JAMADI O., REVERET F., MALLET E., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., BOUCHOULE S., LAFOSSE X., LI F., LEROUX M., SEMOND F., ZUNIGAPEREZ A.
Polariton condensation phase diagram in wide bandgap planar microcavities: ZnO versus GaN



AFF
ROCHE E., ANDRE Y., CASTELLUCI D., LEYMARIE J., MEDARD F., REVERET F., AGNES T.
Hydride Vapor Phase Epitaxy growth and optical characterization of (In,Ga)N nanowires



2015
ACL
LI X., SUNDARAM S., DISSEIX P., LEGAC G., BOUCHOULE S., PATRIARCHE G., REVERET F., LEYMARIE J., GMILI Y., MOUDAKIR T., GENTY F., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm



DAMILANO B., BROCHEN S., BRAULT J., HOSSAIN T., REVERET F., FRAYSSINET E., CHENOT S., COURVILLE A., CORDIER Y., SEMOND F.
Growth of nitride-based light emitting diodes with a high reflectivity distributed Bragg reflector on mesa-patterned silicon substrate



FREVILLE P., MONTOUX N., BARAY J., CHAUVIGNE A., REVERET F., AXIME HERVO M., DIONISI D., PAYEN G., SELLEGRI K.
LIDAR Developments at Clermont-Ferrand - France for Atmospheric Observation



LI X., SUNDARAMB S., ELGMILIB Y., GENTY F., BOUCHOULE S., PATRIACHE G., DISSEIX P., REVERET F., LEYMARIE J., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
MOVPE grown periodic AlN/BAlN heterostructure with High boron content



REVERET F., ANDRE Y., GOURMALA O., LEYMARIE J., MIHAILOVIC M., LAGARDE D., GIL E., CASTELLUCI ANDA.TRASSOUDAINE D.
Spatially resolved optical control of GaN grown by selective area Hydride Vapor Phase Epitaxy



LI X., LEGAC G., BOUCHOULE S., ELGMILI Y., PATRIARCHE G., SUNDARAM S., DISSEIX P., REVERET F., LEYMARIE J., STREQUE J., GENTY F., SALVESTRINI J., D.DUPUIS R., LI X., L.VOSS P., OUGAZZADEN A.
Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm



COM
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., DISSEIX P., DUBROVSKII V., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., LEYMARIE J., MEDARD F., MONIER G., RAMDANI M., REVERET F., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy



LEGAC G., LI X., SUNDARAM S., ELGMILI Y., MOUDAKIR T., DISSEIX P., REVERET F., LAGARDE D., OEL LEYMARIE J., BOUCHOULE S., PATRIARCHE G., GENTY F., SALVESTRINI J., DEANDUPUIS R., VOSS P., OUGAZZADEN A.
AlGaN-based MQWs em itting at 280nm for Vertical Cavity Surface Emitting Laser



AFF
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., DISSEIX P., DUBROVSKII V., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., LEYMARIE J., MEDARD F., MONIER G., RAMDANI M., REVERET F., TRASSOUDAINE A.
(In,Ga)N nanostructures grown by Hydride Vapor Phase Epitaxy



ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires



JAMADI O., MALLET E., REVERET F., MEDARD F., DISSEIX P., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., BOUCHOULE S., LAFOSSE X., GOMME G., .LI F., RASHID M., ZUNIGAPEREZ J., SEMOND F.
Polariton Lasing and Phase Diagram of a ZnO Microcavity grown on a Patterned Silicon Substrate



HAHE R., OROSZ L., BOUCHOULE S., BRIMONT C., DISSEIX P., GUILLET T., LAFOSSE X., LEROUX M., LEYMARIE J., LI F., MALPUECH G., REVERET F., SEMOND F., SOLNYSHKOV D., ZUNIGAPEREZ J.
Polariton condensates in ZnO microcavities: propagation Vs localization



MALLET E., JAMADI O., REVERET F., DISSEIX P., MEDARD F., MIHAILOVIC M., SHUBINA T., LEYMARIE J., BOUCHOULE S., LAFOSSE X., GOMME G., LI F., RASHID M., ZUNIGAPEREZ J., SEMOND F.
Study of ZnO exciton-polariton properties by linear and non-linear spectroscopies



A.MAHJOUB M., MONIER G., ROBERTGOUMET C., REVERET F., BIDEUX L., GRUZZA B.
Synthesis of stable and size-controlled ZnO-Si02 quantum dots : relation between chemical composition and strong visible emission



MAHJOUB M., MONIER G., ROBERTGOUMET C., REVERET F., BIDEUX L., GRUZZA B.
Synthesis of stable and size-controlled ZnO-SiO2 quantum dots: relation between chemical composition and strong visible emission  



2014
ACL
MALLET E., REVERET F., DISSEIX P., SHUBINA T., LEYMARIE J.
Influence of excitonic oscillator strengths on the optical properties of GaN and ZnO



ZUNIGAPEREZ J., MALLET E., HAHE R., RASHID M., BOUCHOULE S., BRIMONT C., DISSEIX P., DUBOZ J., GOMME G., GUILLET T., JAMADI O., LAFOSSE X., LEROUX M., LEYMARIE J., LI F., REVERET F., SEMOND F.
Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers



AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultra-long and defect-free GaN nanowires grown by the HVPE process



ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure



COM
TRASSOUDAINE A., REDARAMDANI M., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., DOMINIQUE C.
Fast growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy.



TRASSOUDAINE A., REDARAMDANI M., ANDRE Y., AVIT G., ROCHE E., GAYRAL B., BOUGEROL C., FERRET P., GIL E., REVERET F., LEYMARIE J., MONIER G., DOMINIQUE C.
HVPE novel potential for the synthesis of nitride nanostructures.



2013
ACL
MALLET E., DISSEIX P., LAGARDE D., MIHAILOVIC M., REVERET F., SHUBINA T., LEYMARIE J.
Accurate determination of homogeneous and inhomogeneous excitonic broadenings in ZnO by linear and non-linear spectroscopies



LI F., OROSZ L., KAMOUN O., BOUCHOULE S., BRIMONT C., DISSEIX P., GUILLET T., LAFOSSE X., LEROUX M., LEYMARIE J., MEXIS M., MIHAILOVIC M., PATRIARCHE G., REVERET F., SOLNYSHKOV D., ZUNIGAPEREZ J., MALPUECH G.
Fabrication and characterization of a room-temperature ZnO polariton laser



LI F., OROSZ L., KAMOUN O., BOUCHOULE S., BRIMONT C., DISSEIX P., GUILLET T., LAFOSSE X., LEROUX M., LEYMARIE J., MEXIS M., MIHAILOVIC M., PATRIARCHE G., REVERET F., SOLNYSHKOV D., ZUNIGAPEREZ J., MALPUECH G.
From Excitonic to Photonic Polariton Condensate in a ZnO-Based Microcavity



GACEVIC Z., ROSSBACH G., BUTTE R., REVERET F., GLAUSER M., LEVRAT J., COSENDEY G., CARLIN J., GRANDJEAN N., CALLEJA E.
Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques



HAN Z., NGUYEN H., REVERET F., ABDELBAKI K., LAURET J., BLOCH J., BOUCHOULE S., DELEPORTE E.
Top-mirror migration technique for the fabrication of high-Q planar microcavities containing fragile active materials



COM
ANDRE Y., TRASSOUDAINE A., AVIT G., GIL E., BOUGEROL C., LEKHAL K., REVERET F., LEYMARIE J., VARENNE C., MONIER G., CASTELLUCI D.
GaN nanostructures and nanowires with exceptional lengths and great optical and crystallographic properties grown by Hydride Vapor Phase Epitaxy (HVPE)



ANDRE Y., AVIT G., GIL E., TRASSOUDAINE A., BOUGEROL C., GAYRAL B., LEROUX C., DUBROVSKII V., VARENNE C., MONIER G., REVERET F., LEYMARIE J., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of III-V semiconductor nanostructures and nanowires



OROSZ L., LI F., KAMOUN O., BOUCHOULE S., BRIMONT C., DISSEIX P., GUILLET T., LAFOSSE X., LEROUX M., LEYMARIE J., MEXIS M., MIHAILOVIC M., PATRIARCHE G., REVERET F., SOLNYSHKOV D., ZUNIGAPEREZ J., MALPUECH G.
Polariton mode switching in a ZnO based microcavity



GUILLET T., LI F., OROSZ L., KAMOUN O., BOUCHOULE S., BRIMONT C., DISSEIX P., LAFOSSE X., LEROUX M., LEYMARIE J., MALPUECH G., MEXIS M., MIHAILOVIC M., PATRIARCHE G., REVERET F., SOLNYSHKOV D., ZUNIGAPEREZ J.
Strongly excitonic polariton condensates in a ZnO microcavity



LI F., RASHID M., BOUCHOULET.FLOTTAT S., LAFOSSE X., REVERET F., MIHAILOVIC M., LEYMARIE J., SEMOND F., LEROUX M., ZUNIGAPEREZ J.
ZnO microcavities on crack-free high-reflectivity (Al,Ga)N/AlN (>25pairs) DBRs on patterned Si (110)



AFF
MALLET E., REVERET F., DISSEIX P., MIHAILOVIC M., SHUBINA T., .LEYMARIE J.
Accurate determination of homogeneous and inhomogeneous excitonic broadenings in ZnO by linear and non-linear spectroscopies



MALLET E., REVERET F., DISSEIX P., MEDARD F., MIHAILOVIC M., SHUBINA T., .LEYMARIE J.
Comparative study of zinc oxide and gallium nitride excitonic properties by linear and non-linear spectroscopies



AVIT G., AJIB R., ANDRE Y., GIL E., TRASSOUDAINE A., LEKHAL K., LEROUX C., BOUGEROL C., HOGGAN P., MONIER G., VARENNE C., REVERET F., CASTELLUCI D.
HVPE of III-V long nanowires; growth physics and properties



AVIT G., ANDRE Y., DUBROVSKII V., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., REVERET F., HOGGAN P., CASTELLUCI D., GLAS F., PAGET D.
Hydride VPE growth of III-V nanowires: growth properties, crystal structure



AVIT G., LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., REVERET F., CASTELLUCI D.
Hydride Vapor Phase Epitaxy: a highly efficient tool for the synthesis of great quality GaN based material on sapphire and silicon



OROSZ L., FLOTTAT T., LI F., REVERET F., BOUCHOULE S., BRIMONT C., DISSEIX P., GUILLET T., LAFOSSE X., LEROUX M., LEYMARIE J., MALPUECH G., MEXIS M., MIHAILOVIC M., SOLNYSHKOV D., .ZUNIGAPEREZ J.
Polariton mode switching in a ZnO based microcavity



2012
ACL
REVERET F., DISSEIX P., LEYMARIE J., VASSON A., SEMOND F., LEROUX M.
Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon



OROSZ L., REVERET F., MEDARD F., DISSEIX P., LEYMARIE J., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., ZUNIGAPEREZ J., SEMOND F., LEROUX M., BOUCHOULE S., LAFOSSE X., MEXIS M., BRIMONT C., GUILLET T.
Lo-Phonon-Assisted Polariton Lasing In A Zno-Based Microcavity



COM
ANDRE Y., LEKHAL K., AVIT G., TRASSOUDAINE A., GIL E., BOUGEROL C., VARENNE C., REVERET F., CASTELLUCI D., MONIER G., BIDEUX L.
Catalyst-free and catalyst-assisted hydride vapour phase epitaxy growth of GaN nanowires



MALLET E., REVERET F., CHERRAD M., LAGARDE D., MIHAILOVIC M., DISSEIX P., .LEYMARIE J., SHUBINA T.
Investigations of excitonic properties in bulk ZnO by linear and non-linear spectroscopies



OROSZ L., REVERET F., MEDARD F., DISSEIX P., LEYMARIE J., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., ZUNIGAPEREZ J., SEMOND F., LEROUX M., BOUCHOULE S., LAFOSSE X., MEXIS M., BRIMONT C., GUILLET T.
LO-phonon assisted polariton lasing in a bulk ZnO microcavity



LI F., OROSZ L., KAMOUN O., BOUCHOULE S., BRIMONT C., DISSEIX P., GUILLET T., LAFOSSE X., LEYMARIE J., MEXIS M., MIHAILOVIC M., REVERET F., SOLNYSHKOV D., MALPUECH G., ZUNIGAPEREZ J.
ZnO-based polariton laser from low to room-temperature: phase diagram



2011
ACL
OROSZ L., REVERET F., BOUCHOULE S., ZUNIGAPEREZ J., MEDARD F., LEYMARIE J., DISSEIX P., MIHAILOVIC M., FRAYSSINET E., SEMOND F., LEROUX M., MEXIS M., BRIMONT C., GUILLET T.
Fabrication And Optical Properties Of A Fully-Hybrid Epitaxial Zno-Based Microcavity In The Strong-Coupling Regime



GUILLET T., MEXIS M., LEVRAT J., ROSSBACH G., BRIMONT C., BRETAGNON T., GIL B., BUTTE R., GRANDJEAN N., OROSZ L., REVERET F., LEYMARIE J., ZUNIGAPEREZ J., LEROUX M., SEMOND F., BOUCHOULE S.
Polariton Lasing In A Hybrid Bulk Zno Microcavity



AFF
OROSZ L., REVERET F., BOUCHOULE S., ZUNIGAPEREZ J., MEDARD F., LEYMARIE J., DISSEIX P., MIHAILOVIC M., FRAYSSINET E., SEMOND F., LEROUX M., BRIMONT C., GUILLET T.
Double dielectric mirror ZnO microcavities for low threshold polariton lasing



MALLET E., REVERET F., LAGARDE D., DISSEIX P., LEYMARIE J., MIHAILOVIC M., V.SHUBINA T., ZUNIGAPEREZ J.
Etude des propriétés excitoniques de ZnO par réflectivité et spectroscopie d'autocorrélation interférentielle à l'échelle de la femtoseconde



OROSZ L., REVERET F., BOUCHOULE S., ZUNIGAPEREZ J., MEDARD F., LEYMARIE J., DISSEIX P., MIHAILOVIC M., FRAYSSINET E., SEMOND F., LEROUX M., BRIMONT C., GUILLET T.
Polariton relaxation in a completly hybrid ZnO microcavity



MEXIS M., GUILLET T., BRIMONT C., BRETAGNON T., GIL B., ZUNIGAPEREZ J., FRAYSSINET E., LEROUX M., SEMOND F., BOUCHOULE S., OROSZ L., REVERET F., MIHAILOVIC M., DISSEIX P., LEYMARIE J.
Polariton with high quality factor in a hybrid ZnO-based microcavity



2010
ACL
REVERET F., DISSEIX P., LEYMARIE J., VASSON A., SEMOND F., LEROUX M., MASSIES J.
Modelling of strong coupling regime in bulk GaN microcavities using transfer matrix and quasiparticle formalisms



REVERET F., BEJTKA K., R.EDWARDS P., CHENOT S., R.SELLERS I., DISSEIX P., VASSON A., LEYMARIE J., Y.DUBOZ J., LEROUX M., SEMOND F., W.MARTIN R.
Strong light-matter coupling in bulk GaN-microcavities with double dielectric mirrors fabricated by two different methods



ACTI
RAKOTONANAHARY G., BERRA A., GUEBROU S., LAGARDE D., NATALI F., REVERET F., DISSEIX P., LEYMARIE J., LEROUX M., MASSIES J.
Evidence of excitonic transitions by angle-resolved reflectivity for the determination of oscillator strengths in GaN/(Al,Ga)N quantum wells



2009
REVERET F., MEDARD F., DISSEIX P., LEYMARIE J., MIHAILOVIC M., VASSON A., SELLERS I., SEMOND F., LEROUX M., MASSIES J.
Optical investigations of bulk and multi-quantum well nitride-based microcavities



2008
ACL
BEJTKA K., EDWARDS P., MARTIN R., REVERET F., VASSON A., LEYMARIE J., SELLERS I., LEROUX M., SEMOND F.
Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities



REVERET F., DISSEIX P., LEYMARIE J., VASSON A., SEMOND F., LEROUX M., MASSIES J.
Influence of the mirrors on the strong coupling regime in planar GaN microcavities



BEJTKA K., REVERET F., MARTIN R., EDWARDS P., VASSON A., LEYMARIE J., SELLERS I., DUBOZ J., LEROUX M., SEMOND F.
Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities - art. no. 241105



ACTI
SEMOND F., SELLERS I., OLLIER N., NATALI F., BYRNE D., REVERET F., STOKKERCHEREGI F., BEJTKA K., GURIOLI M., VINATTIERI A., VASSON A., DISSEIX P., LEYMARIE J., LEROUX M., MASSIES J.
Strong Light-Matter Coupling in GaN-Based Microcavities Grown on Silicon Substrates



THE
REVERET F.
Etude du couplage fort par spectroscopie optique dans des microcavités GaN élaborées sur silicium



2007
ACL
BOURAGBA T., MIHAILOVIC M., REVERET F., DISSEIX P., LEYMARIE J., VASSON A., DAMILANO B., HUGUES M., MASSIES J., DUBOZ J.
Annealing effects on InGaAsN/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k-p calculations



SELLERS I., SEMOND F., ZAMFIRESCU M., STOKKERCHEREGI F., DISSEIX P., LEROUX M., LEYMARIE J., GURIOLI M., VINATTIERI A., REVERET F., MALPUECH G., VASSON A., MASSIES J.
From evidence of strong light-matter coupling to polariton emission in GaN microcavities



ACTI
R.SELLERS I., SEMOND F., ZAMRESCU M., STOKKERCHEREGI F., DISSEIX P., LEROUX M., LEYMARIE J., GURIOLI M., VINATTIERI A., REVERET F., MALPUECH G., VASSON A., MASSIES J.
From evidence of strong light-matter coupling to polariton emission in GaN microcavities



REVERET F., SELLERS I., DISSEIX P., LEYMARIE J., VASSON A., SEMOND F., LEROUX M., MASSIES J.
Strong coupling in bulk GaN microcavities grown on silicon38





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