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Laboratoire de recherche
UMR 6602 - UCA/CNRS/SIGMA

Annuaire

Gruzza Bernard


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Fonction : Enseignant chercheur (Permanent Ip)
Axe : Photon
Thème : Minamat
Téléphone : +33473407339
Fax : +33 4 7340 7340



Publications associées :
87 publication trouvées


2016
ACL
MAHJOUB M., MONIER G., ROBERTGOUMET C., REVERET F., ECHABAANE,D.CHAUDANSON M., PETIT M., BIDEUX L., GRUZZA B.
Synthesis and Study of Stable and Size-Controlled ZnO-SiO2 Quantum Dots: Application as Humidity Sensor



ACTI
H.KACHA A., AKKAL B., BENAMARA Z., ROBERTGOUMET C., MONIER G., GRUZZA B.
Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method



KACHA A., AKKAL B., BENAMARA Z., ROBERTGOUMET C., MONIER G., GRUZZA B.
Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method



2015
ACL
KACHA A., AKKAL B., BENAMARA Z., AMRANI M., RABHI A., MONIER G., ROBERTGOUMET C., BIDEUX L., GRUZZA B.
Effects of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs



MAHJOUB M., MONIER G., ROBERTGOUMET C., BIDEUX L., GRUZZA B.
XPS combined with MM-EPES technique for in situ study of ultra thin film deposition: application to an Au/SiO2/Si structure



INV
ROBERTGOUMET C., MAHJOUB M., MONIER G., BIDEUX L., GRUZZA B.
MM-EPES : Non destructive method for thin films analysis. Applications to Si nanoporous surfaces and Au deposits on SiO2/Si



COM
MAHJOUB M., ROBERTGOUMET C., MONIER G., BIDEUX L., GRUZZA B.
New method for the determination of the correction function - Application for an ultimate resolution in the quantitative study of electron spectroscopies



AFF
MAHJOUB M., ROBERTGOUMET C., MONIER G., BIDEUX L., GRUZZA B.
Determination of gold quantity deposited on silicon substrates by elastic electron measurements associated with Monte Carlo simulations and XPS measurements



H.KACHA A., AKKAL B., BENAMARA Z., ROBERTGOUMET C., MONIER G., GRUZZA B.
Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method



A.MAHJOUB M., MONIER G., ROBERTGOUMET C., REVERET F., BIDEUX L., GRUZZA B.
Synthesis of stable and size-controlled ZnO-Si02 quantum dots : relation between chemical composition and strong visible emission



MAHJOUB M., MONIER G., ROBERTGOUMET C., REVERET F., BIDEUX L., GRUZZA B.
Synthesis of stable and size-controlled ZnO-SiO2 quantum dots: relation between chemical composition and strong visible emission  



MAHJOUB M., MONIER G., ROBERTGOUMET C., BIDEUX L., GRUZZA B.
XPS and MM-EPES techniques combined for the study of ultra thin films: Application to gold deposition on SiO2/Si structures



2014
ACL
PAULY N., DUBUS A., MONIER G., ROBERTGOUMET C., MAHJOUB M., BIDEUX L., GRUZZA B.
Energy dependence of the energy loss function parametrization of indium in the Drude-Lindhard model



MAHJOUB M., MONIER G., ROBERTGOUMET C., BIDEUX L., GRUZZA B.
New method for the determination of the correction function of a hemisperical electron analyser based on elastic electron images



2013
BENAMARA M., TALBI A., BENAMARA Z., AKKAL B., CHABANE N., GRUZZA B., ROBERTGOUMET C.
Analysis of C-V Characteristics of InP(p)/InSb/Al2O3/Au MIS Structures in Wide Temperature Range



ROBERTGOUMET C., MAHJOUB M., MONIER G., BIDEUX L., CHELDA S., DUPUIS R., PETIT M., HOGGAN P., GRUZZA B.
Development of Monte-Carlo simulations for nano-patterning surfaces associated with MM-EPES analysis – Application to different Si(111) nanoporous surfaces.



TALBI A., BENAMARA M., BENAMARA Z., AKKAL B., TALBI M., GRUZZA B., ROBERTGOUMET C., BIDEUX L.
Electrical study of alumina as a function of the deposition rate and the layers thickness



TALBI A., BENAMARA M., TALBI M., BENAMARA Z., AKKAL B., GRUZZA B., ROBERTGOUMET C., BIDEUX L., MONIER G.
Study of InP(100)nitridation using AES spectroscopy and electrical analysis: Effect of annealing after nitridation



BACHERBOUIADJRA N., BENAMARA Z., ROBERTGOUMET C., BIDEUX L., GRUZZA B.
XPS and electric analysis of the GaAs(100) nitridation



COM
MONIER G., BIEDUX L., ROBERTGOUMET C., GRUZZA B., ANDRE Y., AVIT J., PETIT M., LABAR J., MENYHARD M., PAGET D., SUBSKY S.
High quality c-GaN ultra-thin film growth on GaAs (001) : Passivating effect and initiation of cubic-GaN bulk structure growth



ROBERTGOUMET C., MONIER G., BIDEUX L., GRUZZA B.
New approach of Monte Carlo simulation for Elastic Peak Electron Spectroscopy Application to electronic microscopy: the MM-EPEM



AFF
MAHJOUB M., ROBERTGOUMET C., MONIER G., BIDEUX L., GRUZZA B.
Determination of the collection angle of an Hemispherical Analyzer (HSA) by EPES measurements and Monte Carlo simulations



PAULY N., DUBUSAND GUILLAUMEMONIER A., ROBERT6GOUMET C., MAHJOUB M., BIDEUX L., GRUZZA B.
Energy dependence of the energy loss function of indium



2012
ACL
MONIER G., BIDEUX L., ROBERTGOUMET C., GRUZZA B., PETIT M., LABAR J., MENYHARD M.
Passivation of GaAs (001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source



2011
AMEUR K., MAZARI H., TIZI S., KHELIFI R., BENAMARA Z., BENSEDDIK N., CHAIB A., ZOUGAGH,M.MOSTEFAOUI N., BIDEUX L., MONIER G., GRUZZA B., ROBERTGOUMET C.
Study of the Characteristics Current–Voltage and Capacity–Voltage of Hg/GaN/GaAs Structures



ZOUGAGH N., BENAMARA Z., MAZARI H., BENSEDDIK N., AMEUR K., MONIER G., BIDEUX L., GRUZZA B.
The dc electrical characterization of Hg/GaN/n-GaAs devices with different thicknesses of the GaN thin layers



AFF
ROBERTGOUMET C., CHELDA S., BIDEUX L., MONIER G., GRUZZA B.
Sensitivity of EPES measurements combined with Monte Carlo simulations : Application on Si(111) nanoporous surfaces



MONIER G., BIDEUX L., GRUZZA B., ROBERTGOUMET C.
Study of high quality GaN epilayers formation on GaAs(001) using low power GDS nitrogen plasma source



2010
ACL
GRUZZA B., CHELDA S., ROBERTGOUMET C., BIDEUX L., MONIER G.
Monte Carlo simulation for Multi-Mode Elastic Peak Electron Spectroscopy of crystalline materials: Effects of surface structure and excitation



FLORI M., GRUZZA B., BIDEUX L., MONIER G., ROBERTGOUMET C., KRAWCZYK M.
Surface analysis of a plasma-nitrided structural steel



COM
GRUZZA B., CHELDA S., ROBERTGOUMET C., MONIER G., BIDEUX L.
Spectroscopie du pic élastique (EPES) et méthode de Monte-Carlo associée



2009
ACL
BENAMARA Z., MECIRDI N., AKKAL B., MAZARI H., CHELLALI M., GRUZZA B., BENKHALIFA S., ROBERTGOUMET C., MONIER G., BIDEUX L.
Electrical characterization and electronic transport modelization in the InN/InP structures



BENAMARA Z., MECIRDI N., AKKAL B., MAZARI H., CHELLALI M., GRUZZA B., S.BEN K.
Electrical characterization and electronic transport modelization in the InN/InP structures



FLORI M., GRUZZA B., BIDEUX L., MONIER G., ROBERTGOUMET C., BENAMARA Z.
First stages of surface steel nitriding: X-ray photoelectron spectroscopy and electrical measurements



EN B., KHALIFA S., SAIDI F., GRUZZA B., ROBERTGOUMET C., BIDEUX L., HASSEN F., MAAREF H.
Growth study of thin indium nitride layers on InP (100) by Auger electron spectroscopy and photoluminescence



ROBERTGOUMET C., MONIER G., ZEFACK B., CHELDA S., BIDEUX L., GRUZZA B., AWITOR O.
SEM and XPS studies of nanohole arrays on InP(100) surfaces created by coupling AAO templates and low energy Ar+ ion sputtering



MONIER G., BIDEUX L., DESPLATS O., FONTAINE C., ROBERTGOUMET C., GRUZZA B.
XPS study of the O2/SF6 microwave plasma oxidation of (0 0 1) GaAs surfaces



COM
GRUZZA B., ROBERTGOUMET C., MONIER G., BIDEUX L.
Nitride passivation and nanotransformation of GaAs and InP surfaces



AFF
CHELDA S., ROBERTGOUMET C., GRUZZA B., MONIER G., BIDEUX L.
A New Approach Of Monte Carlo Simulation For Epes Spectroscopy ? Influence Of The Atomic Planes And The Sep.



ROBERTGOUMET C., KOMLAAWITOR O., MONIER G., ZEFACK B., BIDEUX L., GRUZZA B., CHELDA S.
Feasibility study of nanohole arrays on InP(100) and GaAs(100) surfaces by coupling AAO templates and low energy Ar+ sputtering. SEM and XPS studies.



MONIER G., BIDEUX L., GRUZZA B., ROBERTGOUMET C.
Nano-structuration of III-V compounds surfaces- Application to nitridation and gas sensors



2008
ACL
CHELDA S., ROBERTGOUMET C., GRUZZA B., BIDEUX L., MONIER G.
Effect of surface roughness on EPES and AREPES measurements: Flat and crenels silicon surfaces



KHALIFA S., GRUZZA B., ROBERTGOUMET C., BREMOND G., HJIRI M., SAIDI F., BIDEUX L., BEJI L., MAAREF H.
Morphology and optical properties of p-type porous GaAs(100) layers made by electrochemical etching



FLORI M., GRUZZA B., BIDEUX L., MONIER G., ROBERTGOUMET C.
Study of the 42CrMo4 steel surface by quantitative XPS electron spectroscopy



BIDEUX L., MONIER G., MATOLIN V., ROBERTGOUMET C., GRUZZA B.
XPS study of the formation of ultrathin GaN film on GaAs(100)



FLORI M., GRUZZA B., BIDEUX L., MONIER G., ROBERTGOUMET C., CHERRE J., DEBAYNAST H.
XPS, EPMA and microstructural analysis of a defective industrial plasma-nitrided steel



AFF
CHELDA S., ROBERTGOUMET C., GRUZZA B., BIDEUX L., MONIER G.
Etude de l’effet de la rugosité de surface sur les mesures EPES et AREPES



2007
ACL
ROBERTGOUMET C., PETIT M., BIDEUX L., GRUZZA B., MONIER G., MATOLIN V., SKALA T., TSUD N., PRINCE K.
Combined EELS, LEED and SR-XPS study of ultra-thin crystalline layers of indium nitride on InP(100) - Effect of annealing at 450 degrees C



KRAWCZYK M., BILINSKI A., SOBCZAK J., BENKHALIFA S., ROBERTGOUMET C., BIDEUX L., GRUZZA B., MONIER G.
Interaction of hydrogen with InN thin films elaborated on InP(100)



BENKHALIFA S., GRUZZA B., ROBERTGOUMET C., BIDEUX L., MONIER G., SAIDI F., MGHAIETH R., HJIRI M., HAMILA R., HASSEN F., MAAREF H., BREMOND G., BEJI L.
Study of porous III–V semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL): Effect of ionic bombardment and nitridation process



ACTI
KRAWCZYK M., BILINISKI A., SOBCZAK J., EN B., KHALLFA S., ROBERTGOURNET C., BIDEUX L., GRUZZA B., MONIER G.
Interaction of hydrogen with InN thin films elaborated on InP(100)



KHALIFA S., GRUZZA B., ROBERTGOUMET C., BIDEUX L., MONIER G., SAIDI F., M'GHAIETH R., HJIRI M., HAMILA R., HASSEN F., MAAREF H., BREMOND G., BEJI L.
Study of porous III-V semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL): Effect of ionic bombardment and nitridation process



AFF
GRUZZA B., ROBERTGOUMET C., BENKHALIFA S., MONIER G., BIDEUX L., AWITOR O., ZUBER S., MAZUR P.
Evolution des surfaces d’InP(100) bombardées ioniquement et nitrurées – Etude Auger et AFM/STM



BIDEUX L., ROBERTGOUMET C., AWITOR O., GRUZZA B., MONIER G., DEVERS T., KEAY J., JOHNSON M.
Realisation of self-organised nanopores on InP and GaAs : growth of InN/InP(100) and GaN/GaAs(100) dots



ROBERTGOUMET C., AWITOR O., GRUZZA B., BIDEUX L., MONIER G., DEVERS T., VAYER J.C.KEAY,M.B.JOHNSON M.
Réalisation de micro et nanopores auto-organisés sur des surfaces d’InP(100) : première étape d’élaboration de boites InN enfouies



2006
ACL
TALBI A., BENAMARA Z., AKKAL B., GRUZZA B., BIDEUX L., ROBERTGOUMET C., VARENNE C., CHAMI N.
Nitridation of InP(100) substrates studied by XPS spectroscopy and electrical analysis



ARABASZ S., ADAMOWICZ B., PETIT M., GRUZZA B., ROBERTGOUMET C., PIWONSKI I., BUGAJSKI M., HASEGAWA H.
Room temperature photoluminescence studies of nitrided InP(100) surfaces



BENAMARA Z., MECIRDI N., BACHIRBOUIADJRA B., BIDEUX L., GRUZZA B., ROBERTGOUMET C., MICZEK M., ADAMOWICZ B.
XPS, electric and photoluminescence-based analysis of the GaAs (1 0 0) nitridation



BENAMARA Z., MECIRDI N., BOUIADJRA B., BIDEUX L., GRUZZA B., ROBERT C., MICZEK M., ADAMOWICZ B.
XPS, electric and photoluminescence-based analysis of the GaAs (100) nitridation



AFF
ROBERTGOUMET C., PETIT M., BIDEUX L., GRUZZA B., MONIER G.
Etude par spectroscopies électroniques (SR-XPS, EELS) du recuit de films ultra-minces d'InN sur substrats d'InP(100)



BENKHALIFA S., ROBERTGOUMET C., BIDEUX L., MONIER G., GRUZZA B., .SAIDI F., MGHAIETH R., .HJIRI M., .HAMILA R., .HASSEN F., .MAAREF H., .BREMOND G., .BEJI L.
Study of porous III-V Semiconductors by electron spectroscopy (AES and XPS) and optical spectroscopy(PL) - Effect of ionic bombardment and nitridation process



2005
ACL
PETIT M., BACA D., ARABASZ S., BIDEUX L., TSUD N., FABIK S., GRUZZA B., CHAB V., MATOLIN V., PRINCE K.
Nitridation of InP(100) surface studied by synchrotron radiation



PETIT M., ROBERTGOUMET C., BIDEUX L., GRUZZA B., MATOLIN V., ARABASZ S., ADAMOWICZ B., WAWER D., BUGAJSKI M.
Passivation of InP(100) substrates: first stages of nitridation by thin InN surface overlayers studied by electron spectroscopies



2004
PETIT M., ROBERTGOUMET C., BIDEUX L., GRUZZA B., BENAMARA Z., BACHIRBOUIADJRA N., MATOLIN V.
Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma



MATOLIN V., FABIK S., GLOSIK J., BIDEUX L., OULDMETIDJII Y., GRUZZA B.
Experimental system for GaN thin films growth and in situ characterisation by electron spectroscopic methods



KRAWCZYK M., ZOMMER L., SOBCZAK J., JABLONSKI A., PETIT M., ROBERTGOUMET C., GRUZZA B.
IMFP measurements near Au-Ni alloy surfaces by EPES: indirect evidence of submonolayer Au surface enrichment



BIDEUX L., BACA D., GRUZZA B., MATOLIN V., ROBERTGOUMET C.
Surface modification of GaAs during argon ionic cleaning and nitridation: EELS, EPES and XPS studies



ACTI
PETIT A., ROBERTGOUMET C., BIDEUX L., GRUZZA B., BENAMARA Z., BOUIADJRA N., MATOLIN V.
Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N-2 plasma



BIDEUX L., BACA D., GRUZZA B., MATOLIN V., ROBERTGOUMET C.
Surface modification of GaAs during argon ionic cleaning and nitridation: EELS, EPES and XPS studies



2003
ACL
GRUZZA B., ROBERTGOUMET C., BIDEUX L.
EPES applied to the study of gold/alumina interfaces



PETIT M., OULDMETIDJI Y., ROBERTGOUMET C., BIDEUX L., GRUZZA B., MATOLIN V.
First stages of the InP(100) surfaces nitridation studied by AES, EELS and EPES



ACTI
GRUZZA B., ROBERT C., BIDEUX L.
EPES applied to the study of gold/alumina interfaces



PETIT M., OULDMETIDJI Y., ROBERT C., BIDEUX L., GRUZZA B., MATOLIN V.
First stages of the InP(100) surfaces nitridation studied by AES, EELS and EPES



OULDMETIDJI Y., BIDEUX L., BACA D., GRUZZA B., MATOLIN V.
Nitridation of GaAs(100) substrates and Ga/GaAs systems studied by XPS spectroscopy



2002
ACL
KRAWCZYK M., JABLONSKI A., ZOMMER L., TOTH J., VARGA D., KOVER L., GERGELY G., MENYHARD M., SULYOK A., BENDEK Z., GRUZZA B., ROBERTGOUMET C.
Determination of inelastic mean free paths for AuPd alloys by elastic peak electron spectroscopy (EPES)



GRUZZA B., AKKAL B., BIDEUX L., BENAMARA Z., MERLE S., ROBERTGOUMET C.
Study and characterization of the structures Au/Al2O3/Si and Au/Al0/Al2O3/Si



GRUZZA B., ROBERTGOUMET C., SFAXI L., BOUZAIENE L., HASSEN F., MAAREF H.
Study of AlxGa1-xAs/GaAs heterostructures by EPES method



BIDEUX L., OULDMETIDJI Y., GRUZZA B., MATOLIN V.
Study of InP(100) surface nitridation by x-ray photoelectron spectroscopy



2001
KRAWCZYK M., ZOMMER L., JABLONSKI A., ROBERT C., PAVLUCH J., BIDEUX L., GRUZZA B.
Electron inelastic mean free paths (IMFPs) in binary Au-Cu alloys determined by elastic peak electron spectroscopy



OULDMETIDJI Y., BIDEUX L., MATOLIN V., GRUZZA B., ROBERT C.
Nitridation of InP(100) surface studied by AES and EELS spectroscopies



ACTI
GRUZZA B., MERLE S., BIDEUX L., ROBERT C., KOVER L., TOTH J., MATOLIN V.
UHV aluminium oxide on silicon substrates: electron spectroscopies analysis and electrical measurements



2000
ACL
CHELLALI M., AKKAL B., TIZI S., BENAMARA Z., GRUZZA B., ROBERT C., BIDEUX L.
Effect of InSb layer on the interfacial and electrical properties in the structures based on InP



ACTI
ROBERT C., ZUBER S., BIDEUX L., MERLE S., GRUZZA B., NEHASIL V., MATOLIN V.
Angular distribution of electrons elastically reflected from polycrystalline metals (Pd, In)



VARGA D., KOVER L., TOTH J., TOKESI K., LESIAK B., JABLONSKI A., ROBERT C., GRUZZA B., BIDEUX L.
Determination of yield ratios of elastically backscattered electrons for deriving inelastic mean free paths in solids



1999
ACL
GOUMET E., GIL E., CADORET R., CASTELLUCI D., LEYMARIE J., VASSON A., BIDEUX L., GRUZZA B.
Epitaxial growth of InAs(x)P(1-x)/InP quantum wells by Hydride Vapour Phase Epitaxy



1998
BIDEUX L., ROBERT C., MERLE S., GRUZZA B., GOUMET E., GIL E.
Some applications of Elastic Peak Electron Spectroscopy for semiconductor surface studies



1991
MIHAILOVIC M., BANVILLET H., GRUZZA B., GIL E., CADORET R.
Transient stages during epitaxy of heterostructures on InP in a H. V. P. E. reactor. Application to InP/InAs/InP multiquantum wells growth





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