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Laboratoire de recherche
UMR 6602 - UCA/CNRS/SIGMA

Annuaire

Andre Yamina


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Fonction : Enseignant chercheur (Permanent Ip)
Axe : Photon
Thème : Minamat
Téléphone : +33473407587
Fax : +33 4 7340 7340



Publications associées :
63 publication trouvées


2016
ACL
AVIT G., ANDRE Y., BOUGEROL C., CASTELLUCI D., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., RAMDANI M., ROCHE E., TRASSOUDAINE A.
GaN rods grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE core/shell structures



TRASSOUDAINE A., ROCHE E., BOUGEROL C., ANDRE Y., AVIT G., MONIER G., RAMDANI M., GIL E., CASTELLUCI D., DUBROVSKII V.
Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy



OS
DONG Z., ANDRE Y., DUBROVSKII V., BOUGEROL C., MONIER G., RAMDANI R., TRASSOUDAINE A., LEROUX C., CASTELLUCI D., GIL E.
Laser Optics (LO), 2016 International Conference



INV
ANDRE Y.
HVPE of III-Nitride nanostructures and nanowires towards optoelectronic devices



AFF
ROCHE E., ANDRE Y., CASTELLUCI D., LEYMARIE J., MEDARD F., REVERET F., AGNES T.
Hydride Vapor Phase Epitaxy growth and optical characterization of (In,Ga)N nanowires



2015
ACL
REVERET F., ANDRE Y., GOURMALA O., LEYMARIE J., MIHAILOVIC M., LAGARDE D., GIL E., CASTELLUCI ANDA.TRASSOUDAINE D.
Spatially resolved optical control of GaN grown by selective area Hydride Vapor Phase Epitaxy



OS
GIL E., ANDRE Y., CADORET R., TRASSOUDAINE A.
Hydride Vapor Phase Epitaxy for current III-V and nitride semiconductor compound issues



INV
ANDRE Y.
HVPE of III-Nitrides towards optoeletronic devices



ANDRE Y.
Hydride Vapor Phase Epitaxy growth of III-V semiconductor nanostructures and nanowires on silicon



COM
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., DISSEIX P., DUBROVSKII V., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., LEYMARIE J., MEDARD F., MONIER G., RAMDANI M., REVERET F., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy



AFF
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., DISSEIX P., DUBROVSKII V., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., LEYMARIE J., MEDARD F., MONIER G., RAMDANI M., REVERET F., TRASSOUDAINE A.
(In,Ga)N nanostructures grown by Hydride Vapor Phase Epitaxy



DONG Z., ANDRE Y., GIL E., DUBROVSKII V., LEROUX C., BOUGEROL C., RAMDANI R., VARENNE C., AUDONNET F., FONTANILLE P., TRASSOUDAINE A., CASTELLUCI D., HARMOND J.
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE



DONG Z., ANDRE Y., GIL E., DUBROVSKII V., LEROUX C., BOUGEROL C., RAMDANI R., VARENNE C., AUDONNET F., FONTANILLE P., TRASSOUDAINE A., CASTELLUCI D., HARMOND J.
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE



ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires



2014
ACL
GIL E., DUBROVSKII V., AVIT G., ANDRE Y., LEROUX C., LEKHAL K., GRECENKOV J., TRASSOUDAINE A., CASTELLUCI D., MONIER G., RAMDANI M., ROBERTGOUMET C., BIDEUX L., HARMAND J., GLAS F.
Record pure zincblende phase in GaAs nanowires down to 5 nm in radius



AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultra-long and defect-free GaN nanowires grown by the HVPE process



ANDRE Y., LEKHAL K., HOGGAN P., AVIT G., CADIZ F., ROWE A., PAGET D., PETIT E., LEROUX C., TRASSOUDAINE A., REDARAMDANI M., MONIER G., COLAS D., AJIB R., CASTELLUCI D., GIL E.
Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation



ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure



INV
ANDRE Y.
Hydride Vapor Phase Epitaxy of III-V semiconductor nanostructures and nanowires



COM
TRASSOUDAINE A., REDARAMDANI M., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., DOMINIQUE C.
Fast growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy.



DONG Z., ANDRE Y., CASTELLUCI D., GIL E., TRASSOUDAINE A.
HVPE Growth of GaAs Nanowires



TRASSOUDAINE A., REDARAMDANI M., ANDRE Y., AVIT G., ROCHE E., GAYRAL B., BOUGEROL C., FERRET P., GIL E., REVERET F., LEYMARIE J., MONIER G., DOMINIQUE C.
HVPE novel potential for the synthesis of nitride nanostructures.



AFF
ROCHE E., TRASSOUDAINE A., ANDRE Y., CASTELLUCI D., AVIT G., RAMDANI M., GIL E.
HVPE synthesis of InGaN nanowires



2013
ACL
GIL E., ANDRE Y., REDARAMDANI M., FONTAINE C., TRASSOUDAINE A., CASTELLUCI D.
Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapour Phase Epitaxy (HVPE)



ACTI
ANDRE Y., AVIT G., LEKHAL K., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., MICHAUD P., FONTANILLE P., PIERRE G., PAGET D., ROWE A., PETIT E., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications



INV
ANDRE Y.
Le procédé HVPE pour l'épitaxie sélective et le contrôle des morphologies aux échelles micro- et nanométriques.



COM
ANDRE Y., TRASSOUDAINE A., AVIT G., GIL E., BOUGEROL C., LEKHAL K., REVERET F., LEYMARIE J., VARENNE C., MONIER G., CASTELLUCI D.
GaN nanostructures and nanowires with exceptional lengths and great optical and crystallographic properties grown by Hydride Vapor Phase Epitaxy (HVPE)



MONIER G., BIEDUX L., ROBERTGOUMET C., GRUZZA B., ANDRE Y., AVIT J., PETIT M., LABAR J., MENYHARD M., PAGET D., SUBSKY S.
High quality c-GaN ultra-thin film growth on GaAs (001) : Passivating effect and initiation of cubic-GaN bulk structure growth



ANDRE Y., AVIT G., GIL E., TRASSOUDAINE A., BOUGEROL C., GAYRAL B., LEROUX C., DUBROVSKII V., VARENNE C., MONIER G., REVERET F., LEYMARIE J., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of III-V semiconductor nanostructures and nanowires



ANDRE Y., AVIT G., LEKHAL K., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., FONTANILLE P., PIERRE G., PAGET D., ROWE A., PETIT E., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications



AFF
AVIT G., AJIB R., ANDRE Y., GIL E., TRASSOUDAINE A., LEKHAL K., LEROUX C., BOUGEROL C., HOGGAN P., MONIER G., VARENNE C., REVERET F., CASTELLUCI D.
HVPE of III-V long nanowires; growth physics and properties



AVIT G., ANDRE Y., DUBROVSKII V., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., REVERET F., HOGGAN P., CASTELLUCI D., GLAS F., PAGET D.
Hydride VPE growth of III-V nanowires: growth properties, crystal structure



AVIT G., LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., REVERET F., CASTELLUCI D.
Hydride Vapor Phase Epitaxy: a highly efficient tool for the synthesis of great quality GaN based material on sapphire and silicon



HDR
ANDRE Y.
Croissance par procédés HVPE, SAG-HVPE et VLS-HVPE de nanostructures et nanofils de semiconducteurs III-V (GaN et GaAs)



2012
ACL
AVIT G., LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., VARENNE C., BOUGEROL C., MONIER G., CASTELLUCI D.
Catalyst-assisted Hydride Vapor Phase Epitaxy of GaN nanowires: exceptional length and constant rod like shape capability



ANDRE Y., TRASSOUDAINE A., GIL E., LEKHAL K., GOURMALACHELDA O., CASTELLUCI D., CADORET R.
Demonstration of crystal-vapor equilibrium leading to a growth blockade of GaN during selective area growth



LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., AVIT G., CELLIER J., CASTELLUCI D.
Exceptional crystal defined bunched and hyperbunched GaN nanorods grown by catalyst-free HVPE



COM
GIL E., ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., ROBERTGOUMET C., CASTELLUCI D., BIDEUX L.
Catalyst-assisted Hydride Vapour Phase Epitaxy of III-V nanowires: exceptional length, constant rodlike shape and defect-free crystal capability



ANDRE Y., LEKHAL K., AVIT G., TRASSOUDAINE A., GIL E., BOUGEROL C., VARENNE C., REVERET F., CASTELLUCI D., MONIER G., BIDEUX L.
Catalyst-free and catalyst-assisted hydride vapour phase epitaxy growth of GaN nanowires



2011
LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., VARENNE C., MONIER G., CASTELLUCI D., BIDEUX L.
HVPE and VLS-HVPE synthesis of GaN nanowires and nanostructures



2010
ACL
CHELDAGOURMALA O., TRASSOUDAINE A., ANDRE Y., BOUCHOULE S., GIL E., TOURRET J., CASTELLUCI D., CADORET R.
Complete HVPE experimental investigations : cartography of SAG GaN towards quasi-substrates or nanostructures



RAMDANI M., GIL E., LEROUX C., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., BIDEUX L., MONIER G., ROBERTGOURMET C., KULKA R.
Fast Growth Synthesis of GaAs Nanowires with Exceptional Length



VU D., RAMDANI M., BANSROPUN S., GERARD B., GIL E., ANDRE Y., ROWE A., PAGET D.
Local spin injectors using GaAs tips under light excitation



VU D., ARSCOTT S., PEYTAVIT E., RAMDANI R., GIL E., ANDRE Y., BANSROPUN S., GERARD B., ROWE A., PAGET D.
Photoassisted tuneling from free-standing GaAs thin films into metallic surfaces



2009
TOURRET J., GOURMALA O., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)



2008
AOUDE O., DISSEIX P., LEYMARIE J., VASSON A., LEROUX M., AUJOL E., BEAUMONT B., TRASSOUDAINE A., ANDRE Y.
Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN



ACTI
TOURRET J., GOURMALA O., TRASSOUDAINE A., ANDRE Y., GIL E., CASTELLUCI D., CADORET R.
Low-cost high-quality GaN by one-step growth



COM
GOURMALA O., TRASSOUDAINE A., ANDRE Y., TOURRET J., CASTELLUCI D., CADORET R., GIL E.
Experimental conditions influence on growth rate and quality of GaN layers by standard and ELO HVPE



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BIDEUX L., MONIER G., ROBERTGOUMET C., LEROUX C.
HVPE process : an effective tool for the bottom-up shaping of micro- and nano-objects with controlled morphology



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BODIN A., LEROUX C., BIDEUX L., MONIER G., AWITOR O., ROBERTGOUMET C., KUPKA R.
High aspect ratio GaAs nanowires grown by Hydride Vapor Phase Epitaxy



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BIDEUX L., MONIER G., ROBERTGOUMET C., LEROUX C., FONTAINE C.
Selective growth of III-V nanowires and micro- nano- objects by HVPE



AFF
CHELDAGOURMALA O., TOURRET J., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
Experimental conditions influence on growth rate and quality of GaN layers by SAG and ELO HVPE



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BODIN A., LEROUX C., BIDEUX L., MONIER G., AWITOR O., ROBERTGOUMET C., KUPKA R.
VLS-HVPE : a tool for the synthesis of lengthy semiconductor nanowires



GOURMALA O., TOURRET J., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
Étude cristallographique et physique de la croissance sélective HVPE de GaN



2007
ACL
ANDRE Y., TRASSOUDAINE A., TOURRET J., CADORET R., GIL E., CASTELLUCI D., AOUDE O., DISSEIX P.
Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers



RAMDANI R., GIL E., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., PAGET D., ROWE A., GERARD B.
Selective epitaxial growth of GaAs tips for local spin injector applications



COM
TOURRET J., GOURMALA O., TRASSOUDAINE A., ANDRE Y., GIL E., CASTELLUCI D., CADORET R.
Low cost high quality GaN by one step growth



AFF
GOURMALA O., TOURRET J., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
Carrier gas composition, growth temperature and III/V ratio variation for ELO GaN grown by HVPE



GOURMALA O., TOURRET J., TRASSOUDAINE A., ANDRE Y., CADORET R., CASTELLUCI R., GIL E.
The Optimisation of a 2” HVPE Reactor For High Quality Thick GaN Layers



2006
ACL
AOUDE O., DISSEIX P., LEYMARIE J., VASSON A., AUJOL E., BEAUMONT B., TRASSOUDAINE A., ANDRE Y.
Continuous wave and ultra-fast reflectivity studies for the determination of GaN excitonic oscillator strengths as a function of the in-plane biaxial strain



AFF
RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BIDEUX L., MONIER G., ROBERTGOUMET C., LEROUX C., FONTAINE C.
Croissance sélective HVPE à morphologie contrôlée à l'échelle sub-micrométrique et nanométrique de semiconducteurs III-V



2005
COM
ANDRE Y.
Growth of hign quality thick GaN by HVPE



AFF
RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A.
Croissance sélective HVPE à morphologie contrôlée à l'échelle submicrométrique et nanométrique de semiconducteurs III-V





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