Langues

Laboratoire de recherche
UMR 6602 - UCA/CNRS/SIGMA

Annuaire

Gil Evelyne


Photo
Fonction : Enseignant chercheur (Permanent Ip)
Axe : Photon
Thème : Minamat
Téléphone : +33473407344
Fax : +33 4 7340 7340



Publications associées :
103 publication trouvées


2016
ACL
AVIT G., ANDRE Y., BOUGEROL C., CASTELLUCI D., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., RAMDANI M., ROCHE E., TRASSOUDAINE A.
GaN rods grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE core/shell structures



TRASSOUDAINE A., ROCHE E., BOUGEROL C., ANDRE Y., AVIT G., MONIER G., RAMDANI M., GIL E., CASTELLUCI D., DUBROVSKII V.
Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy



OS
DONG Z., ANDRE Y., DUBROVSKII V., BOUGEROL C., MONIER G., RAMDANI R., TRASSOUDAINE A., LEROUX C., CASTELLUCI D., GIL E.
Laser Optics (LO), 2016 International Conference



INV
GIL E.
Growth of high aspect ratio semiconductor (nano)structures: back to basics of crystallogenesis



2015
ACL
REVERET F., ANDRE Y., GOURMALA O., LEYMARIE J., MIHAILOVIC M., LAGARDE D., GIL E., CASTELLUCI ANDA.TRASSOUDAINE D.
Spatially resolved optical control of GaN grown by selective area Hydride Vapor Phase Epitaxy



OS
GIL E., ANDRE Y., CADORET R., TRASSOUDAINE A.
Hydride Vapor Phase Epitaxy for current III-V and nitride semiconductor compound issues



INV
GIL E.
VLS growth from chloride gaseous precursors: fast atomistic growth process for polytypism-free III-V NWs with record aspect ratio



COM
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., DISSEIX P., DUBROVSKII V., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., LEYMARIE J., MEDARD F., MONIER G., RAMDANI M., REVERET F., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy



AFF
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., DISSEIX P., DUBROVSKII V., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., LEYMARIE J., MEDARD F., MONIER G., RAMDANI M., REVERET F., TRASSOUDAINE A.
(In,Ga)N nanostructures grown by Hydride Vapor Phase Epitaxy



DONG Z., ANDRE Y., GIL E., DUBROVSKII V., LEROUX C., BOUGEROL C., RAMDANI R., VARENNE C., AUDONNET F., FONTANILLE P., TRASSOUDAINE A., CASTELLUCI D., HARMOND J.
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE



DONG Z., ANDRE Y., GIL E., DUBROVSKII V., LEROUX C., BOUGEROL C., RAMDANI R., VARENNE C., AUDONNET F., FONTANILLE P., TRASSOUDAINE A., CASTELLUCI D., HARMOND J.
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE



2014
ACL
GIL E., DUBROVSKII V., AVIT G., ANDRE Y., LEROUX C., LEKHAL K., GRECENKOV J., TRASSOUDAINE A., CASTELLUCI D., MONIER G., RAMDANI M., ROBERTGOUMET C., BIDEUX L., HARMAND J., GLAS F.
Record pure zincblende phase in GaAs nanowires down to 5 nm in radius



AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultra-long and defect-free GaN nanowires grown by the HVPE process



ANDRE Y., LEKHAL K., HOGGAN P., AVIT G., CADIZ F., ROWE A., PAGET D., PETIT E., LEROUX C., TRASSOUDAINE A., REDARAMDANI M., MONIER G., COLAS D., AJIB R., CASTELLUCI D., GIL E.
Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation



ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure



INV
GIL E.
Hydride VPE: the unexpected process for the fast growth of III-V nanowires with record aspect ratio and polytypism-free crystalline structure



GIL E.
La VPE aux hydrures (HVPE) : le procédé inattendu pour la croissance rapide de nanofils III-V(N) à rapport de forme inédit



COM
TRASSOUDAINE A., REDARAMDANI M., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., DOMINIQUE C.
Fast growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy.



DONG Z., ANDRE Y., CASTELLUCI D., GIL E., TRASSOUDAINE A.
HVPE Growth of GaAs Nanowires



TRASSOUDAINE A., REDARAMDANI M., ANDRE Y., AVIT G., ROCHE E., GAYRAL B., BOUGEROL C., FERRET P., GIL E., REVERET F., LEYMARIE J., MONIER G., DOMINIQUE C.
HVPE novel potential for the synthesis of nitride nanostructures.



AFF
ROCHE E., TRASSOUDAINE A., ANDRE Y., CASTELLUCI D., AVIT G., RAMDANI M., GIL E.
HVPE synthesis of InGaN nanowires



2013
ACL
GIL E., ANDRE Y., REDARAMDANI M., FONTAINE C., TRASSOUDAINE A., CASTELLUCI D.
Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapour Phase Epitaxy (HVPE)



ACTI
ANDRE Y., AVIT G., LEKHAL K., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., MICHAUD P., FONTANILLE P., PIERRE G., PAGET D., ROWE A., PETIT E., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications



INV
GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure



COM
ANDRE Y., TRASSOUDAINE A., AVIT G., GIL E., BOUGEROL C., LEKHAL K., REVERET F., LEYMARIE J., VARENNE C., MONIER G., CASTELLUCI D.
GaN nanostructures and nanowires with exceptional lengths and great optical and crystallographic properties grown by Hydride Vapor Phase Epitaxy (HVPE)



ANDRE Y., AVIT G., GIL E., TRASSOUDAINE A., BOUGEROL C., GAYRAL B., LEROUX C., DUBROVSKII V., VARENNE C., MONIER G., REVERET F., LEYMARIE J., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of III-V semiconductor nanostructures and nanowires



ANDRE Y., AVIT G., LEKHAL K., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., FONTANILLE P., PIERRE G., PAGET D., ROWE A., PETIT E., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications



AFF
AVIT G., AJIB R., ANDRE Y., GIL E., TRASSOUDAINE A., LEKHAL K., LEROUX C., BOUGEROL C., HOGGAN P., MONIER G., VARENNE C., REVERET F., CASTELLUCI D.
HVPE of III-V long nanowires; growth physics and properties



AVIT G., ANDRE Y., DUBROVSKII V., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., REVERET F., HOGGAN P., CASTELLUCI D., GLAS F., PAGET D.
Hydride VPE growth of III-V nanowires: growth properties, crystal structure



AVIT G., LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., REVERET F., CASTELLUCI D.
Hydride Vapor Phase Epitaxy: a highly efficient tool for the synthesis of great quality GaN based material on sapphire and silicon



2012
ACL
AVIT G., LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., VARENNE C., BOUGEROL C., MONIER G., CASTELLUCI D.
Catalyst-assisted Hydride Vapor Phase Epitaxy of GaN nanowires: exceptional length and constant rod like shape capability



ANDRE Y., TRASSOUDAINE A., GIL E., LEKHAL K., GOURMALACHELDA O., CASTELLUCI D., CADORET R.
Demonstration of crystal-vapor equilibrium leading to a growth blockade of GaN during selective area growth



LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., AVIT G., CELLIER J., CASTELLUCI D.
Exceptional crystal defined bunched and hyperbunched GaN nanorods grown by catalyst-free HVPE



COM
GIL E., ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., ROBERTGOUMET C., CASTELLUCI D., BIDEUX L.
Catalyst-assisted Hydride Vapour Phase Epitaxy of III-V nanowires: exceptional length, constant rodlike shape and defect-free crystal capability



ANDRE Y., LEKHAL K., AVIT G., TRASSOUDAINE A., GIL E., BOUGEROL C., VARENNE C., REVERET F., CASTELLUCI D., MONIER G., BIDEUX L.
Catalyst-free and catalyst-assisted hydride vapour phase epitaxy growth of GaN nanowires



2011
LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., VARENNE C., MONIER G., CASTELLUCI D., BIDEUX L.
HVPE and VLS-HVPE synthesis of GaN nanowires and nanostructures



2010
ACL
CHELDAGOURMALA O., TRASSOUDAINE A., ANDRE Y., BOUCHOULE S., GIL E., TOURRET J., CASTELLUCI D., CADORET R.
Complete HVPE experimental investigations : cartography of SAG GaN towards quasi-substrates or nanostructures



RAMDANI M., GIL E., LEROUX C., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., BIDEUX L., MONIER G., ROBERTGOURMET C., KULKA R.
Fast Growth Synthesis of GaAs Nanowires with Exceptional Length



VU D., RAMDANI M., BANSROPUN S., GERARD B., GIL E., ANDRE Y., ROWE A., PAGET D.
Local spin injectors using GaAs tips under light excitation



VU D., ARSCOTT S., PEYTAVIT E., RAMDANI R., GIL E., ANDRE Y., BANSROPUN S., GERARD B., ROWE A., PAGET D.
Photoassisted tuneling from free-standing GaAs thin films into metallic surfaces



2009
TOURRET J., GOURMALA O., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)



ACTI
MARTINEZ O., ANGULO H., AVELLA M., GONZALEZ M., SANZ L., JIMENEZ J., GERARD B., GIL E.
Spectral image cathodoluminescence, photoluminescence and Raman study of GaAs layers grown on Si substrates



COM
GIL E.
Rodlike GaAs nanowires with exceptional length



2008
ACTI
MARTINEZ O., SANZ L., JIMENEZ J., GERARD B., GIL E.
A study of conformal GaAs on Si layers by Micro-Raman and Spectral Imaging Cathodoluminescence



TOURRET J., GOURMALA O., TRASSOUDAINE A., ANDRE Y., GIL E., CASTELLUCI D., CADORET R.
Low-cost high-quality GaN by one-step growth



COM
GOURMALA O., TRASSOUDAINE A., ANDRE Y., TOURRET J., CASTELLUCI D., CADORET R., GIL E.
Experimental conditions influence on growth rate and quality of GaN layers by standard and ELO HVPE



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BIDEUX L., MONIER G., ROBERTGOUMET C., LEROUX C.
HVPE process : an effective tool for the bottom-up shaping of micro- and nano-objects with controlled morphology



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BODIN A., LEROUX C., BIDEUX L., MONIER G., AWITOR O., ROBERTGOUMET C., KUPKA R.
High aspect ratio GaAs nanowires grown by Hydride Vapor Phase Epitaxy



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BIDEUX L., MONIER G., ROBERTGOUMET C., LEROUX C., FONTAINE C.
Selective growth of III-V nanowires and micro- nano- objects by HVPE



AFF
CHELDAGOURMALA O., TOURRET J., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
Experimental conditions influence on growth rate and quality of GaN layers by SAG and ELO HVPE



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BODIN A., LEROUX C., BIDEUX L., MONIER G., AWITOR O., ROBERTGOUMET C., KUPKA R.
VLS-HVPE : a tool for the synthesis of lengthy semiconductor nanowires



GOURMALA O., TOURRET J., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
Étude cristallographique et physique de la croissance sélective HVPE de GaN



2007
ACL
ANDRE Y., TRASSOUDAINE A., TOURRET J., CADORET R., GIL E., CASTELLUCI D., AOUDE O., DISSEIX P.
Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers



RAMDANI R., GIL E., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., PAGET D., ROWE A., GERARD B.
Selective epitaxial growth of GaAs tips for local spin injector applications



MARTINEZ O., SANZ L., JIMENEZ J., MARTINMARTIN A., GERARD B., GIL E.
Stress distribution mapping of GaAs on Si conformal layers - art. no. 054901



COM
TOURRET J., GOURMALA O., TRASSOUDAINE A., ANDRE Y., GIL E., CASTELLUCI D., CADORET R.
Low cost high quality GaN by one step growth



AFF
GOURMALA O., TOURRET J., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
Carrier gas composition, growth temperature and III/V ratio variation for ELO GaN grown by HVPE



GOURMALA O., TOURRET J., TRASSOUDAINE A., ANDRE Y., CADORET R., CASTELLUCI R., GIL E.
The Optimisation of a 2” HVPE Reactor For High Quality Thick GaN Layers



2006
ACTI
SAOUDI R., GIL E., TRASSOUDAINE A., CASTELLUCI D., RAMDANI R., DARRAUD C.
Fabrication of photonic crystals by anisotropic crystalline growth by the hydrides method



INV
GIL E.
Techniques de croissance épitaxiale hors équilibre et équilibre : des outils pour la fabrication bottom-up de structures à morphologie contrôlée à l'échelle submicrométrique



AFF
RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BIDEUX L., MONIER G., ROBERTGOUMET C., LEROUX C., FONTAINE C.
Croissance sélective HVPE à morphologie contrôlée à l'échelle sub-micrométrique et nanométrique de semiconducteurs III-V



OV
GIL E.
D'où vient la lumière LASER ?



2005
AFF
RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A.
Croissance sélective HVPE à morphologie contrôlée à l'échelle submicrométrique et nanométrique de semiconducteurs III-V



2004
ACL
TRASSOUDAINE A., CADORET R., GIL E.
Temperature influence on the growth of gallium nitride by HVPE in a mixed H-2/N-2 carrier gas



ACTI
MARTINEZ O., ARDILA A., AVELLA M., JIMENEZ J., ROSSI F., ARMANI N., GERARD B., GIL E.
Cathodoluminescence study of Si complex formation in self-doped and intentionally Si-doped GaAs conformal layers



FAYE D., LALLIER E., GRISARD A., GERARD B., GIL E.
Fabrication de guides AlGaAs à orientation périodique pour conversions non linéaires efficaces



FAYE D., LALLIER E., GRISARD A., GERARD B., GIL E.
HVPE-based orientation-patterned GaAs: added-value for non-linear applications



GIL E., TRASSOUDAINE A., CASTELLUCI D., PIMPINELLI A., SAOUDI R., PARRIAUX O., MURAVAUD A., DARRAUD C.
Submicrometer scale growth morphology control for the making of photonic crystal structures



GIL E., TRASSOUDAINE A., CASTELLUCI D., PIMPINELLI A., SAOUDI R., PARRIAUX O., MURAVAUD A., DARRAUD C.
Submicrometer scale growth morphology control: a new route for the making of photonic crystal structures ?



2003
ACL
GIL E., NAPIERALA J., PIMPINELLI A., CADORET R., TRASSOUDAINE A.
Direct condensation modelling for a two-particle growth system : application to GaAs grown by hydride vapour phase epitaxy



PIMPINELLI A., CADORET R., GIL E., TRASSOUDAINE A.
Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces



ACTI
ARDILA A., MARTINEZ O., AVELLA M., SANZ L., JIMENEZ J., GERARD B., NAPIERALA J., GIL E.
Study of doping in GaAs layers by local probe techniques: micro-Raman, micro-photoluminescence and cathodoluminescence



2002
ACL
ARDILA A., MARTINEZ O., AVELLA M., JIMENEZ J., GIL E., GERARD B.
Optical characterization of GaAs/Si layers grown by the conformal method (confined lateral epitaxial growth)



ARDILA A., MARTINEZ O., AVELLA M., JIMENEZ J., GERARD B., NAPIERALA J., GIL E.
Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy



ACTI
ARDILA A., MARTINEZ O., SANZ L., AVELLA M., JIMENEZ J., NAPIERALA J., GIL E., GERARD B.
Study of defects in conformal GaAs/Si layers by optical techniques and photoetching



2001
ACL
MARTINEZ O., AVELLA M., PUENTE E., GONZALEZ M., JIMENEZ J., GERARD B., GIL E.
Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques



GIL E., NAPIERALA J., CASTELLUCI D., PIMPINELLI A., CADORET R., GERARD B.
Selective growth of GaAs by HVPE : keys for accurate control of the growth morphologies



ARDILA A., MARTINEZ O., AVELLA M., JIMENEZ J., GERARD B., NAPIERALA J., GIL E.
Self-doping near the seed/layer interface in conformal GaAs layers grown on Si



AUJOL E., NAPIERALA J., TRASSOUDAINE A., GIL E., CADORET R.
Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen



ACTI
NAPIERALA J., GIL E., CASTELLUCI D., PIMPINELLI A., GERARD B.
Control of the growth morphologies of GaAs stripes grown on patterned substrates by HVPE



GIL E., VIDECOQ A., NAPIERALA J., CASTELLUCI D., PIMPINELLI A., GERARD B., JIMENEZ J., AVELLA M.
High-quality GaAs-related lateral junctions on Si by conformal growth



2000
ACL
MARTINEZ O., AVELLA M., PUENTE E., JIMENEZ J., GERARD B., GIL E.
Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman



ACTI
PHILIPENS M., OLIGSCHLAEGER R., GERARD B., RUSHWORTH S., GIL E., NAPIERALA J., JIMENEZ J., HEIME K.
Conformal MOVPE of AlGaAs on silicon using alternative chlorine-containing precursors



1999
ACL
GOUMET E., GIL E., CADORET R., CASTELLUCI D., LEYMARIE J., VASSON A., BIDEUX L., GRUZZA B.
Epitaxial growth of InAs(x)P(1-x)/InP quantum wells by Hydride Vapour Phase Epitaxy



ACTI
GIL E., NAPIERALA J., CASTELLUCI D., PIMPINELLI A., GERARD B., PRIBAT D.
Kinetic modelling of the selective epitaxy of GaAs on patterned substrates by HVPE. Application to the conformal growth of low defect density GaAs layers on silicon



1998
ACL
TRASSOUDAINE A., PARILLAUD O., GOUMET E., CASTELLUCI D., GIL E., CADORET R.
Kinetic study of Si incorporation in InP by the Hydride Vapour Phase Epitaxy



BIDEUX L., ROBERT C., MERLE S., GRUZZA B., GOUMET E., GIL E.
Some applications of Elastic Peak Electron Spectroscopy for semiconductor surface studies



1997
CADORET R., GIL E.
GaAs growth mechanisms of exact and misoriented *001* faces by the chloride method in H2 : surface diffusion, spiral growth, HCl and GaCl3 desorption mechanisms



1996
PARILLAUD O., GIL E., GERARD B., ETIENNE P., PRIBAT D.
High quality InP on Si by conformal growth



1995
GIL E., PIFFAULT N., CADORET R.
Kinetic expression and study of the growth rate of mismatched (Ga,In)As / InP structures grown by Hydride Vapour Phase Epitaxy



ACTI
PARILLAUD O., GERARD B., BISARO R., LEYMARIE J., PIFFAULT N., GIL E., CASTELLUCI D., GOUMET E., VASSON A., VASSON A., PRIBAT D., CADORET R.
Low defect density InP films grown on Si by HVPE using a new crystal refining technique



1994
ACL
PIFFAULT N., GIL E., LEYMARIE J., CLARK S., ANDERSON M., CADORET R., VASSON A.
Epitaxial growth and kinetic study of mismatched (Ga,In)As / InP layers grown by hydride vapour phase epitaxy



ACTI
PIFFAULT N., PARILLAUD O., GIL E., LEYMARIE J., VASSON A., VASSON A., CADORET R., GERARD B., PRIBAT D.
Assessment of the strain of InP films on Si obtained by HVPE conformal growth



PARILLAUD O., PIFFAULT N., GIL E., CADORET R., GERARD B., PRIBAT D.
Defect free InP films on Si substrates obtained by hydride vapor phase conformal growth



1993
ACL
DISSEIX P., LEYMARIE J., VASSON A., BANVILLET H., GIL E., PIFFAULT N., CADORET R.
Photoluminescence studies in strained InAs/InP quantum wells grown by hydride vapor phase epitaxy



1991
GIL E., BANVILLET H., PIFFAULT N., CADORET R., FERDJANI K., LEYMARIE J., VASSON A., VASSON A., TABATA A., BENYATTOU T., GUILLOT G.
InAs/InP Strained Quantum Wells growth by Hydride Vapor Phase Epitaxy and photoluminescence studies



BANVILLET H., GIL E., CADORET R., DISSEIX P., FERDJANI K., VASSON A., TABATA A., BENYATTOU T., GUILLOT G.
Optical investigation in ultra-thin InAs/InP Quantum Wells grown by Hydride Vapor Phase Epitaxy



MIHAILOVIC M., BANVILLET H., GRUZZA B., GIL E., CADORET R.
Transient stages during epitaxy of heterostructures on InP in a H. V. P. E. reactor. Application to InP/InAs/InP multiquantum wells growth



ACTI
LEYMARIE J., MIHAILOVIC M., GIL E., PIFFAULT N., VASSON A., VASSON A., TABATA A., BENYATTOU T., GUILLOT G., CADORET R.
InAs/InP strained quantum wells grown by Hydride Vapor Phase Epitaxy and studied by photoluminescence



1990
ACL
MIHAILOVIC M., CADORET M., BANVILLET H., GIL E., CADORET R.
Epitaxial Growth of InP/InAs/InP Quantum Wells



ACTI
BANVILLET H., GIL E., VASSON A., CADORET R., TABATA A., BENYATTOU T., GUILLOT G.
Epitaxial growth and photoluminescence investigations of InP/InAs Quantum Wells grown by Hydride Vapor Phase Epitaxy



AFF
BANVILLET H., GIL E., DISSEIX P., FERDJANI K., VASSON A., VASSON A., TABATA A., BENYATTOU T.
Etude par photoluminescence de puits quantiques contraints InP/InAs/InP obtenus par épitaxie en phase vapeur par la méthode aux hydrures.



1988
ACL
DEREOTIER P., GIL E., VULLIET P.
Mossbauer investigation if iron doped YBaCu307-CHI





<-- retour à l'annuaire