Langues

Laboratoire de recherche
UMR 6602 - UCA/CNRS/SIGMA

Annuaire

Leymarie Joel


Photo
Fonction : Enseignant chercheur (Permanent Ip)
Axe : Photon
Thème : N2
Téléphone : +33473407026
Fax : +33 4 7340 7340



Publications associées :
114 publication trouvées


2016
ACL
REVERET F., BIGNET L., ZHIGANG W., LAFOSSE X., PATRIARCHE G., DISSEIX P., MEDARD F., MIHAILOVIC M., LEYMARIE J., ZUNIGAPEREZ J., BOUCHOULE S.
High reflectance dielectric distributed Bragg reflectors for near ultra-violet 2 planar microcavities: SiO2/HfO2 versus SiO2/SiNx



ZUNIGAPEREZ J., KAPPEI L., DEPARIS C., REVERET F., GRUNDMANN M., L.DEPRADO E., JAMADI O., LEYMARIE J., CHENOT S., LEROUX M.
Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: towards reduced photonic disorder



JAMADI O., REVERET F., MALLET E., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., LAFOSSE X., BOUCHOULE S., LI F., LEROUX M., SEMOND F., ZUNIGAPEREZ J.
Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO



COM
JAMADI O., REVERET F., MALLET E., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., BOUCHOULE S., LAFOSSE X., LI F., LEROUX M., SEMOND F., ZUNIGAPEREZ A.
Polariton condensation phase diagram in wide bandgap planar microcavities: ZnO versus GaN



AFF
ROCHE E., ANDRE Y., CASTELLUCI D., LEYMARIE J., MEDARD F., REVERET F., AGNES T.
Hydride Vapor Phase Epitaxy growth and optical characterization of (In,Ga)N nanowires



2015
ACL
LI X., SUNDARAM S., DISSEIX P., LEGAC G., BOUCHOULE S., PATRIARCHE G., REVERET F., LEYMARIE J., GMILI Y., MOUDAKIR T., GENTY F., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm



LI X., SUNDARAMB S., ELGMILIB Y., GENTY F., BOUCHOULE S., PATRIACHE G., DISSEIX P., REVERET F., LEYMARIE J., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
MOVPE grown periodic AlN/BAlN heterostructure with High boron content



REVERET F., ANDRE Y., GOURMALA O., LEYMARIE J., MIHAILOVIC M., LAGARDE D., GIL E., CASTELLUCI ANDA.TRASSOUDAINE D.
Spatially resolved optical control of GaN grown by selective area Hydride Vapor Phase Epitaxy



LI X., LEGAC G., BOUCHOULE S., ELGMILI Y., PATRIARCHE G., SUNDARAM S., DISSEIX P., REVERET F., LEYMARIE J., STREQUE J., GENTY F., SALVESTRINI J., D.DUPUIS R., LI X., L.VOSS P., OUGAZZADEN A.
Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm



COM
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., DISSEIX P., DUBROVSKII V., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., LEYMARIE J., MEDARD F., MONIER G., RAMDANI M., REVERET F., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy



AFF
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., DISSEIX P., DUBROVSKII V., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., LEYMARIE J., MEDARD F., MONIER G., RAMDANI M., REVERET F., TRASSOUDAINE A.
(In,Ga)N nanostructures grown by Hydride Vapor Phase Epitaxy



ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires



JAMADI O., MALLET E., REVERET F., MEDARD F., DISSEIX P., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., BOUCHOULE S., LAFOSSE X., GOMME G., .LI F., RASHID M., ZUNIGAPEREZ J., SEMOND F.
Polariton Lasing and Phase Diagram of a ZnO Microcavity grown on a Patterned Silicon Substrate



HAHE R., OROSZ L., BOUCHOULE S., BRIMONT C., DISSEIX P., GUILLET T., LAFOSSE X., LEROUX M., LEYMARIE J., LI F., MALPUECH G., REVERET F., SEMOND F., SOLNYSHKOV D., ZUNIGAPEREZ J.
Polariton condensates in ZnO microcavities: propagation Vs localization



MALLET E., JAMADI O., REVERET F., DISSEIX P., MEDARD F., MIHAILOVIC M., SHUBINA T., LEYMARIE J., BOUCHOULE S., LAFOSSE X., GOMME G., LI F., RASHID M., ZUNIGAPEREZ J., SEMOND F.
Study of ZnO exciton-polariton properties by linear and non-linear spectroscopies



2014
ACL
MALLET E., REVERET F., DISSEIX P., SHUBINA T., LEYMARIE J.
Influence of excitonic oscillator strengths on the optical properties of GaN and ZnO



ZUNIGAPEREZ J., MALLET E., HAHE R., RASHID M., BOUCHOULE S., BRIMONT C., DISSEIX P., DUBOZ J., GOMME G., GUILLET T., JAMADI O., LAFOSSE X., LEROUX M., LEYMARIE J., LI F., REVERET F., SEMOND F.
Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers



LANTY G., JEMLI K., LEYMARIE J., EVEN J., LAURET J., DELEPORTE E.
Room-Temperature Optical Tunability and Inhomogeneous Broadening in 2D-Layered Organic–Inorganic Perovskite Pseudobinary Alloys



AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultra-long and defect-free GaN nanowires grown by the HVPE process



ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure



COM
TRASSOUDAINE A., REDARAMDANI M., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., DOMINIQUE C.
Fast growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy.



TRASSOUDAINE A., REDARAMDANI M., ANDRE Y., AVIT G., ROCHE E., GAYRAL B., BOUGEROL C., FERRET P., GIL E., REVERET F., LEYMARIE J., MONIER G., DOMINIQUE C.
HVPE novel potential for the synthesis of nitride nanostructures.



2013
ACL
MALLET E., DISSEIX P., LAGARDE D., MIHAILOVIC M., REVERET F., SHUBINA T., LEYMARIE J.
Accurate determination of homogeneous and inhomogeneous excitonic broadenings in ZnO by linear and non-linear spectroscopies



LI F., OROSZ L., KAMOUN O., BOUCHOULE S., BRIMONT C., DISSEIX P., GUILLET T., LAFOSSE X., LEROUX M., LEYMARIE J., MEXIS M., MIHAILOVIC M., PATRIARCHE G., REVERET F., SOLNYSHKOV D., ZUNIGAPEREZ J., MALPUECH G.
Fabrication and characterization of a room-temperature ZnO polariton laser



LI F., OROSZ L., KAMOUN O., BOUCHOULE S., BRIMONT C., DISSEIX P., GUILLET T., LAFOSSE X., LEROUX M., LEYMARIE J., MEXIS M., MIHAILOVIC M., PATRIARCHE G., REVERET F., SOLNYSHKOV D., ZUNIGAPEREZ J., MALPUECH G.
From Excitonic to Photonic Polariton Condensate in a ZnO-Based Microcavity



COM
ANDRE Y., TRASSOUDAINE A., AVIT G., GIL E., BOUGEROL C., LEKHAL K., REVERET F., LEYMARIE J., VARENNE C., MONIER G., CASTELLUCI D.
GaN nanostructures and nanowires with exceptional lengths and great optical and crystallographic properties grown by Hydride Vapor Phase Epitaxy (HVPE)



ANDRE Y., AVIT G., GIL E., TRASSOUDAINE A., BOUGEROL C., GAYRAL B., LEROUX C., DUBROVSKII V., VARENNE C., MONIER G., REVERET F., LEYMARIE J., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of III-V semiconductor nanostructures and nanowires



OROSZ L., LI F., KAMOUN O., BOUCHOULE S., BRIMONT C., DISSEIX P., GUILLET T., LAFOSSE X., LEROUX M., LEYMARIE J., MEXIS M., MIHAILOVIC M., PATRIARCHE G., REVERET F., SOLNYSHKOV D., ZUNIGAPEREZ J., MALPUECH G.
Polariton mode switching in a ZnO based microcavity



GUILLET T., LI F., OROSZ L., KAMOUN O., BOUCHOULE S., BRIMONT C., DISSEIX P., LAFOSSE X., LEROUX M., LEYMARIE J., MALPUECH G., MEXIS M., MIHAILOVIC M., PATRIARCHE G., REVERET F., SOLNYSHKOV D., ZUNIGAPEREZ J.
Strongly excitonic polariton condensates in a ZnO microcavity



LI F., RASHID M., BOUCHOULET.FLOTTAT S., LAFOSSE X., REVERET F., MIHAILOVIC M., LEYMARIE J., SEMOND F., LEROUX M., ZUNIGAPEREZ J.
ZnO microcavities on crack-free high-reflectivity (Al,Ga)N/AlN (>25pairs) DBRs on patterned Si (110)



AFF
OROSZ L., FLOTTAT T., LI F., REVERET F., BOUCHOULE S., BRIMONT C., DISSEIX P., GUILLET T., LAFOSSE X., LEROUX M., LEYMARIE J., MALPUECH G., MEXIS M., MIHAILOVIC M., SOLNYSHKOV D., .ZUNIGAPEREZ J.
Polariton mode switching in a ZnO based microcavity



2012
ACL
REVERET F., DISSEIX P., LEYMARIE J., VASSON A., SEMOND F., LEROUX M.
Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon



OROSZ L., REVERET F., MEDARD F., DISSEIX P., LEYMARIE J., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., ZUNIGAPEREZ J., SEMOND F., LEROUX M., BOUCHOULE S., LAFOSSE X., MEXIS M., BRIMONT C., GUILLET T.
Lo-Phonon-Assisted Polariton Lasing In A Zno-Based Microcavity



COM
OROSZ L., REVERET F., MEDARD F., DISSEIX P., LEYMARIE J., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., ZUNIGAPEREZ J., SEMOND F., LEROUX M., BOUCHOULE S., LAFOSSE X., MEXIS M., BRIMONT C., GUILLET T.
LO-phonon assisted polariton lasing in a bulk ZnO microcavity



LI F., OROSZ L., KAMOUN O., BOUCHOULE S., BRIMONT C., DISSEIX P., GUILLET T., LAFOSSE X., LEYMARIE J., MEXIS M., MIHAILOVIC M., REVERET F., SOLNYSHKOV D., MALPUECH G., ZUNIGAPEREZ J.
ZnO-based polariton laser from low to room-temperature: phase diagram



2011
ACL
SHUBINA T., V M., GIPPIUS N., TOROPOV A., LAGARDE,P.DISSEIX D., LEYMARIE J., GIL B., POZINA G., BERGMAN J., MONEMAR B.
Delay and distortion of slow light pulses by excitons in ZnO



SHUBINA T., V A., POZINA G., BERGMAN J., GLAZOV M., GIPPIUS N., DISSEIX P., LEYMARIE J., GIL B., MONEMAR B.
Excitonic parameters of GaN studied by time-of-flight spectroscopy



OROSZ L., REVERET F., BOUCHOULE S., ZUNIGAPEREZ J., MEDARD F., LEYMARIE J., DISSEIX P., MIHAILOVIC M., FRAYSSINET E., SEMOND F., LEROUX M., MEXIS M., BRIMONT C., GUILLET T.
Fabrication And Optical Properties Of A Fully-Hybrid Epitaxial Zno-Based Microcavity In The Strong-Coupling Regime



LANTY G., ZHANG S., LAURET J., DELEPORTE E., AUDEBERT P., BOUCHOULE S., LAFOSSE X., ZUNIGAPEREZ J., SEMOND F., LAGARDE D., MEDARD F., LEYMARIE J.
Hybrid cavity polaritons in a ZnO-perovskite microcavity



GUILLET T., MEXIS M., LEVRAT J., ROSSBACH G., BRIMONT C., BRETAGNON T., GIL B., BUTTE R., GRANDJEAN N., OROSZ L., REVERET F., LEYMARIE J., ZUNIGAPEREZ J., LEROUX M., SEMOND F., BOUCHOULE S.
Polariton Lasing In A Hybrid Bulk Zno Microcavity



AFF
OROSZ L., REVERET F., BOUCHOULE S., ZUNIGAPEREZ J., MEDARD F., LEYMARIE J., DISSEIX P., MIHAILOVIC M., FRAYSSINET E., SEMOND F., LEROUX M., BRIMONT C., GUILLET T.
Double dielectric mirror ZnO microcavities for low threshold polariton lasing



MALLET E., REVERET F., LAGARDE D., DISSEIX P., LEYMARIE J., MIHAILOVIC M., V.SHUBINA T., ZUNIGAPEREZ J.
Etude des propriétés excitoniques de ZnO par réflectivité et spectroscopie d'autocorrélation interférentielle à l'échelle de la femtoseconde



OROSZ L., REVERET F., BOUCHOULE S., ZUNIGAPEREZ J., MEDARD F., LEYMARIE J., DISSEIX P., MIHAILOVIC M., FRAYSSINET E., SEMOND F., LEROUX M., BRIMONT C., GUILLET T.
Polariton relaxation in a completly hybrid ZnO microcavity



MEXIS M., GUILLET T., BRIMONT C., BRETAGNON T., GIL B., ZUNIGAPEREZ J., FRAYSSINET E., LEROUX M., SEMOND F., BOUCHOULE S., OROSZ L., REVERET F., MIHAILOVIC M., DISSEIX P., LEYMARIE J.
Polariton with high quality factor in a hybrid ZnO-based microcavity



2010
ACL
MEDARD F., LAGARDE D., ZUNIGAPEREZ J., DISSEIX P., MIHAILOVIC M., LEYMARIE J., FRAYSSINET E., C.MORENO J., SEMOND F., LEROUX M., BOUCHOULE S.
Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities



REVERET F., DISSEIX P., LEYMARIE J., VASSON A., SEMOND F., LEROUX M., MASSIES J.
Modelling of strong coupling regime in bulk GaN microcavities using transfer matrix and quasiparticle formalisms



REVERET F., BEJTKA K., R.EDWARDS P., CHENOT S., R.SELLERS I., DISSEIX P., VASSON A., LEYMARIE J., Y.DUBOZ J., LEROUX M., SEMOND F., W.MARTIN R.
Strong light-matter coupling in bulk GaN-microcavities with double dielectric mirrors fabricated by two different methods



SHUBINA T., ANDRIANOV A., ZAKHAR'IN A., JMERIK V., SOSHNIKOV I., KOMISSAROVA T., USIKOVA A., KOP'EV P., IVANOV S., SHALYGIN V., SOFRONOV A., FIRSOV D., VOROB'EV L., GIPPIUS N., LEYMARIE J., WANG X., YOSHIKAWA A.
Terahertz electroluminescence of surface plasmons from nanostructured InN layers



ACTI
RAKOTONANAHARY G., BERRA A., GUEBROU S., LAGARDE D., NATALI F., REVERET F., DISSEIX P., LEYMARIE J., LEROUX M., MASSIES J.
Evidence of excitonic transitions by angle-resolved reflectivity for the determination of oscillator strengths in GaN/(Al,Ga)N quantum wells



MEDARD F., LAGARDE D., ZUNIGAPEREZ J., DISSEIX P., LEYMARIE J., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., FRAYSSINET E., SERGENT S., SEMOND F., LEROUX M., BOUCHOULE S.
Toward polariton lasing in a zinc oxide microcavity: Design and preliminary results



2009
ACL
KOMISSAROVA T., SHUBINA T., JMERIK V., IVANOV S., RYABOVA L., KHOKHLOV D., VASSON A., LEYMARIE J., ARAKI T., NANISHI Y.
Electrical and optical properties of InN with periodic metallic in insertions



MEDARD F., ZUNIGAPEREZ J., DISSEIX P., MIHAILOVIC M., LEYMARIE J., VASSON A., SEMOND F., FRAYSSINET E., MORENO J., LEROUX M., FAURE S., GUILLET T.
Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption



SHUBINA T., KOSOBUKIN V., KOMISSAROVA T., JMERIK V., SEMENOV A., MELTSER B., KOP'EV P., IVANOV S., VASSON A., LEYMARIE J., GIPPIUS N., ARAKI T., AKAGI T., NANISHI Y.
Inconsistency of basic optical processes in plasmonic nanocomposites



FAURE S., BRIMONT C., GUILLET T., BRETAGNON T., GIL B., MEDARD F., LAGARDE D., DISSEIX P., LEYMARIE J., ZUNIGAPEREZ J., LEROUX M., FRAYSSINET E., MORENO J., SEMOND F., BOUCHOULE S.
Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature



ACTI
MIHAILOVIC M., HENNEGHIEN A., FAURE S., DISSEIX P., LEYMARIE J., VASSON A., BUELL D., SEMOND F., MORHAIN C., PEREZ J.
Optical and excitonic properties of ZnO films



REVERET F., MEDARD F., DISSEIX P., LEYMARIE J., MIHAILOVIC M., VASSON A., SELLERS I., SEMOND F., LEROUX M., MASSIES J.
Optical investigations of bulk and multi-quantum well nitride-based microcavities



MEDARD F., ZUNIGAPEREZ J., FRAYSSINET E., MORENO J., SEMOND F., FAURE S., DISSEIX P., LEYMARIE J., MIHAILOVIC M., VASSON A., GUILLET T., LEROUX M.
Optical study of bulk ZnO for strong coupling observation in ZnO-based microcavities



2008
ACL
AOUDE O., DISSEIX P., LEYMARIE J., VASSON A., LEROUX M., AUJOL E., BEAUMONT B., TRASSOUDAINE A., ANDRE Y.
Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN



BEJTKA K., EDWARDS P., MARTIN R., REVERET F., VASSON A., LEYMARIE J., SELLERS I., LEROUX M., SEMOND F.
Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities



REVERET F., DISSEIX P., LEYMARIE J., VASSON A., SEMOND F., LEROUX M., MASSIES J.
Influence of the mirrors on the strong coupling regime in planar GaN microcavities



SHUBINA T., GLAZOV M., TOROPOV A., GIPPIUS N., VASSON A., LEYMARIE J., KAVOKIN A., USUI A., BERGMAN J., POZINA G., MONEMAR B.
Resonant light delay in GaN with ballistic and diffusive propagation - art. no. 087402



BEJTKA K., REVERET F., MARTIN R., EDWARDS P., VASSON A., LEYMARIE J., SELLERS I., DUBOZ J., LEROUX M., SEMOND F.
Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities - art. no. 241105



ACTI
SEMOND F., SELLERS I., OLLIER N., NATALI F., BYRNE D., REVERET F., STOKKERCHEREGI F., BEJTKA K., GURIOLI M., VINATTIERI A., VASSON A., DISSEIX P., LEYMARIE J., LEROUX M., MASSIES J.
Strong Light-Matter Coupling in GaN-Based Microcavities Grown on Silicon Substrates



2007
ACL
BOURAGBA T., MIHAILOVIC M., REVERET F., DISSEIX P., LEYMARIE J., VASSON A., DAMILANO B., HUGUES M., MASSIES J., DUBOZ J.
Annealing effects on InGaAsN/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k-p calculations



SHUBINA T., GLAZOV M., IVANOV S., VASSON A., LEYMARIE J., MONEMAR B., ARAKI T., NAOI H., NANISHI Y.
Effects of non-stoichiometry and compensation on fundamental parameters of heavily-doped InN



SELLERS I., SEMOND F., ZAMFIRESCU M., STOKKERCHEREGI F., DISSEIX P., LEROUX M., LEYMARIE J., GURIOLI M., VINATTIERI A., REVERET F., MALPUECH G., VASSON A., MASSIES J.
From evidence of strong light-matter coupling to polariton emission in GaN microcavities



SHUBINA T., IVANOV S., JMERIK V., MIZEROV A., LEYMARIE J., VASSON A., MONEMAR B., KOPEV ,.
Inhomogeneous InGaN and InN with In-enriched nanostructures



SHUBINA T., VASSON A., LEYMARIE J., GIPPIUS N., JMERIK V., MONEMAR B., IVANOV S.
Localized plasmans at pores and clusters within inhamageneous indium nitride films.



ACTI
R.SELLERS I., SEMOND F., ZAMRESCU M., STOKKERCHEREGI F., DISSEIX P., LEROUX M., LEYMARIE J., GURIOLI M., VINATTIERI A., REVERET F., MALPUECH G., VASSON A., MASSIES J.
From evidence of strong light-matter coupling to polariton emission in GaN microcavities



REVERET F., SELLERS I., DISSEIX P., LEYMARIE J., VASSON A., SEMOND F., LEROUX M., MASSIES J.
Strong coupling in bulk GaN microcavities grown on silicon38



2006
ACL
AOUDE O., DISSEIX P., LEYMARIE J., VASSON A., AUJOL E., BEAUMONT B., TRASSOUDAINE A., ANDRE Y.
Continuous wave and ultra-fast reflectivity studies for the determination of GaN excitonic oscillator strengths as a function of the in-plane biaxial strain



SHUBINA T., IVANOV S., JMERIK V., TOROPOV A., VASSON A., LEYMARIE J., KOP'EV P.
Plasmonic effects in InN-based structures with nano-clusters of metallic indium



SELLERS I., SEMOND F., LEROUX M., MASSIES J., DISSEIX P., HENNEGHIEN A., LEYMARIE J., VASSON A.
Strong coupling of light with A and B excitons in GaN microcavities grown on silicon



SELLERS I., SEMOND F., LEROUX M., MASSIES J., HENNEGHIEN A., DISSEIX P., LEYMARIE J., VASSON A.
Strong light-matter coupling in GaN microcavities grown on silicon(111) at room temperature



SHUBINA T., PLOTNIKOV D., VASSON A., LEYMARIE J., LARSSON M., HOLTZ P., MONEMAR B., LU H., SCHAFF W., KOP'EV P.
Surface-plasmon resonances in indium nitride with metal-enriched nano-particles



ACTI
SELLERS I., SEMOND F., LEROUX M., MASSIES J., DISSEIX P., MALPUECH G., HENNEGHIEN A., LEYMARIE J., VASSON A.
Room temperature Strong coupling in low finesse GaN microcavities



SELLERS I., SEMOND F., LEROUX M., MASSIES J., HENNEGHIEN A., DISSEIX P., LEYMARIE J., VASSON A.
Strong light-matter coupling in GaN microcavities grown on silicon(111) at room temperature



2005
ACL
SHUBINA T., IVANOV S., JMERIK V., GLAZOV M., KALVARSKII A., TKACHMAN M., VASSON A., LEYMARIE J., KAVOKIN A., AMANO H., AKASAKI I., BUTCHER K., GUO Q., MONEMAR B., KOP'EV P.
Optical properties of InN with stoichoimetry violation and indium clustering



KUBALL M., POMEROY J., WINTREBERTFOUQUET M., BUTCHER K., LU H., SCHAFF W., SHUBINA T., IVANOV S., VASSON A., LEYMARIE J.
Resonant Raman spectroscopy on InN



OLLIER N., NATALI F., BYRNE D., DISSEIX P., MIHAILOVIC M., VASSON A., LEYMARIE J., SEMOND F., MASSIES J.
Spectroscopy of a bulk GaN microcavity grown on Si(111)



SEMOND F., SELLERS I., NATALI F., BYRNE D., LEROUX M., MASSIES J., OLLIER N., LEYMARIE J., DISSEIX P., VASSON A.
Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon



2004
AOUDE O., DISSEIX P., LEYMARIE J., VASSON A., AUJOL E., BEAUMONT B.
Femtosecond time-resolved interferences of resonantly excited excitons in bulk GaN



SHUBINA T., IVANOV S., JMERIK V., SOLNYSHKOV D., VEKSHIN V., KOP'EV P., VASSON A., LEYMARIE J., KAVOKIN A., AMANO H., SHIMONO K., KASIC A., MONEMAR B.
Mie resonances, infrared emission, and the band gap of InN



ACTI
ANTOINEVINCENT N., NATALI F., BYRNE D., DISSEIX P., VASSON A., LEYMARIE J., SEMOND F., MASSIES J.
Potentialities of GaN-based microcavities in strong coupling regime at room temperature



BOURAGBA T., MIHAILOVIC M., CARRERE H., DISSEIX P., VASSON A., LEYMARIE J., BEDEL E., ARNOULT A., FONTAINE C.
Thermally detected optical absorption and photoluminescence studies of InGaAsN/GaAs quantum wells



2003
ACL
ANTOINEVINCENT N., NATALI F., MIHAILOVIC M., VASSON A., LEYMARIE J., DISSEIX P., BYRNE D., SEMOND F., MASSIES J.
Determination of the refractive indices of AlN, GaN, and AlxGa1-xN grown on (111)Si substrates



ANTOINEVINCENT N., NATALI F., BYRNE D., VASSON A., DISSEIX P., LEYMARIE J., LEROUX M., SEMOND F., MASSIES J.
Observation of Rabi splitting in a bulk GaN microcavity grown on silicon



ACTI
SEMOND F., BYRNE D., LEROUX F., MASSIES J., ANTOINEVINCENT N., VASSON A., DISSEIX P., LEYMARIE J.
Advances in the realisation of GaN-based microcavities: Towards strong coupling at room temperature



ANTOINEVINCENT N., NATALI F., MIHAILOVIC M., DISSEIX P., VASSON A., LEYMARIE J., BYRNE D., SEMOND F., MASSIES J.
Determination of AlxGa1-xN refractive indexes at low and room temperature, in the 300-600 nm range, for the optimisation of GaN-based microcavities



2002
ANTOINEVINCENT N., NATALI F., DISSEIX P., MIHAILOVIC M., VASSON A., LEYMARIE J., SEMOND F., LEROUX M., MASSIES J.
Modeling and spectroscopy of GaN microcavities



KVIETKOVA J., SIOZADE L., DISSEIX P., VASSON A., LEYMARIE J., DAMILANO B., GRANDJEAN N., MASSIES J.
Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells



2001
ACL
SEMOND F., ANTOINEVINCENT N., SCHNELL N., MALPUECH G., LEROUX M., MASSIES J., DISSEIX P., LEYMARIE J., VASSON A.
Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlN distributed Bragg reflector on (111)Si



AURAND A., LEYMARIE J., VASSON A., MESRINE M., MASSIES J., LEROUX M.
Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure



DISSEIX P., PAYEN C., LEYMARIE J., VASSON A., MOLLOT F.
Thermally detected optical absorption, reflectance and photo-reflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy



ACTI
SIOZADE L., DISSEIX P., VASSON A., LEYMARIE J., DAMILANO B., GRANDJEAN N., MASSIES J.
Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy



SIOZADE L., LEYMARIE J., DISSEIX P., VASSON A., MIHAILOVIC M., GRANDJEAN N., LEROUX M., MASSIES J.
Modelling of absorption and emission spectra of InxGa1-xN



2000
ACL
SIOZADE L., LEYMARIE J., DISSEIX P., VASSON A., MIHAILOVIC M., GRANDJEAN N., LEROUX M., MASSIES J.
Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures



DISSEIX P., PAYEN C., LEYMARIE J., VASSON A., MOLLOT F.
Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy



1999
GOUMET E., GIL E., CADORET R., CASTELLUCI D., LEYMARIE J., VASSON A., BIDEUX L., GRUZZA B.
Epitaxial growth of InAs(x)P(1-x)/InP quantum wells by Hydride Vapour Phase Epitaxy



BALLET P., DISSEIX P., LEYMARIE J., VASSON A., VASSON A., GREY R.
Indium segregation effects in (111)B-grown (In,Ga)As/GaAs piezoelectric quantum wells



MALPUECH G., KAVOKIN A., LEYMARIE J., DISSEIX P., VASSON A.
Optical spectroscopy study of the phase of the reflection coefficient of a single quantum well in the exciton resonance region



ACTI
DISSEIX P., BALLET P., MONIER C., LEYMARIE J., VASSON A., VASSON A.
Optical properties of (In,Ga)As/GaAs heterostructures grown on conventional (100) and (111)B GaAs substrates



1998
ACL
BALLET P., DISSEIX P., LEYMARIE J., VASSON A., VASSON A., GREY R.
The determination of e(14) in (111)B-grown (In,Ga)As/GaAs strained layers



ACTI
BALLET P., DISSEIX P., LEYMARIE J., VASSON A., VASSON A., GREY R.
Effect of indium surface segregation on excitonic properties in (111)B-grown (In,Ga)As/GaAs multiple quantum wells



1997
ACL
DISSEIX P., LEYMARIE J., VASSON A., VASSON A., NIER,N.GRANDJEAN C., LEROUX M., MASSIES J.
Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells



ACTI
LEYMARIE J., DISSEIX P., REZKI M., MONIER C., VASSON A., VASSON A.
Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties



DISSEIX P., LEYMARIE J., VASSON A., VASSON A., MONIER C., GRANDJEAN N., LEROUX M., MASSIES J.
Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions



1995
PARILLAUD O., GERARD B., BISARO R., LEYMARIE J., PIFFAULT N., GIL E., CASTELLUCI D., GOUMET E., VASSON A., VASSON A., PRIBAT D., CADORET R.
Low defect density InP films grown on Si by HVPE using a new crystal refining technique



1994
ACL
PIFFAULT N., GIL E., LEYMARIE J., CLARK S., ANDERSON M., CADORET R., VASSON A.
Epitaxial growth and kinetic study of mismatched (Ga,In)As / InP layers grown by hydride vapour phase epitaxy



ACTI
PIFFAULT N., PARILLAUD O., GIL E., LEYMARIE J., VASSON A., VASSON A., CADORET R., GERARD B., PRIBAT D.
Assessment of the strain of InP films on Si obtained by HVPE conformal growth



1993
ACL
M.VASSON A., VASSON A., LEYMARIE J., DISSEIX P., BORING P., GIL B.
1St Investigation on an ultra thin InAs/InP single quantum well by Thermally Detected Optical Absorption Spectroscopy



DISSEIX P., LEYMARIE J., VASSON A., BANVILLET H., GIL E., PIFFAULT N., CADORET R.
Photoluminescence studies in strained InAs/InP quantum wells grown by hydride vapor phase epitaxy



1991
GIL E., BANVILLET H., PIFFAULT N., CADORET R., FERDJANI K., LEYMARIE J., VASSON A., VASSON A., TABATA A., BENYATTOU T., GUILLOT G.
InAs/InP Strained Quantum Wells growth by Hydride Vapor Phase Epitaxy and photoluminescence studies



ACTI
LEYMARIE J., MIHAILOVIC M., GIL E., PIFFAULT N., VASSON A., VASSON A., TABATA A., BENYATTOU T., GUILLOT G., CADORET R.
InAs/InP strained quantum wells grown by Hydride Vapor Phase Epitaxy and studied by photoluminescence





<-- retour à l'annuaire