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Laboratoire de recherche
UMR 6602 - UCA/CNRS/SIGMA

Annuaire

Castelluci Dominique


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Fonction : Personnel technique (Permanent Ip)
Axe : Photon
Thème : Minamat
Téléphone : +33473407345
Fax : +33 4 7340 7340



Publications associées :
57 publication trouvées


2016
ACL
AVIT G., ANDRE Y., BOUGEROL C., CASTELLUCI D., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., RAMDANI M., ROCHE E., TRASSOUDAINE A.
GaN rods grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE core/shell structures



TRASSOUDAINE A., ROCHE E., BOUGEROL C., ANDRE Y., AVIT G., MONIER G., RAMDANI M., GIL E., CASTELLUCI D., DUBROVSKII V.
Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy



OS
DONG Z., ANDRE Y., DUBROVSKII V., BOUGEROL C., MONIER G., RAMDANI R., TRASSOUDAINE A., LEROUX C., CASTELLUCI D., GIL E.
Laser Optics (LO), 2016 International Conference



AFF
ROCHE E., ANDRE Y., CASTELLUCI D., LEYMARIE J., MEDARD F., REVERET F., AGNES T.
Hydride Vapor Phase Epitaxy growth and optical characterization of (In,Ga)N nanowires



2015
COM
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., DISSEIX P., DUBROVSKII V., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., LEYMARIE J., MEDARD F., MONIER G., RAMDANI M., REVERET F., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy



AFF
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., DISSEIX P., DUBROVSKII V., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., LEYMARIE J., MEDARD F., MONIER G., RAMDANI M., REVERET F., TRASSOUDAINE A.
(In,Ga)N nanostructures grown by Hydride Vapor Phase Epitaxy



DONG Z., ANDRE Y., GIL E., DUBROVSKII V., LEROUX C., BOUGEROL C., RAMDANI R., VARENNE C., AUDONNET F., FONTANILLE P., TRASSOUDAINE A., CASTELLUCI D., HARMOND J.
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE



DONG Z., ANDRE Y., GIL E., DUBROVSKII V., LEROUX C., BOUGEROL C., RAMDANI R., VARENNE C., AUDONNET F., FONTANILLE P., TRASSOUDAINE A., CASTELLUCI D., HARMOND J.
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE



ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires



2014
ACL
GIL E., DUBROVSKII V., AVIT G., ANDRE Y., LEROUX C., LEKHAL K., GRECENKOV J., TRASSOUDAINE A., CASTELLUCI D., MONIER G., RAMDANI M., ROBERTGOUMET C., BIDEUX L., HARMAND J., GLAS F.
Record pure zincblende phase in GaAs nanowires down to 5 nm in radius



AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultra-long and defect-free GaN nanowires grown by the HVPE process



ANDRE Y., LEKHAL K., HOGGAN P., AVIT G., CADIZ F., ROWE A., PAGET D., PETIT E., LEROUX C., TRASSOUDAINE A., REDARAMDANI M., MONIER G., COLAS D., AJIB R., CASTELLUCI D., GIL E.
Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation



ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure



COM
DONG Z., ANDRE Y., CASTELLUCI D., GIL E., TRASSOUDAINE A.
HVPE Growth of GaAs Nanowires



AFF
ROCHE E., TRASSOUDAINE A., ANDRE Y., CASTELLUCI D., AVIT G., RAMDANI M., GIL E.
HVPE synthesis of InGaN nanowires



2013
ACL
GIL E., ANDRE Y., REDARAMDANI M., FONTAINE C., TRASSOUDAINE A., CASTELLUCI D.
Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapour Phase Epitaxy (HVPE)



ACTI
ANDRE Y., AVIT G., LEKHAL K., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., MICHAUD P., FONTANILLE P., PIERRE G., PAGET D., ROWE A., PETIT E., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications



COM
ANDRE Y., TRASSOUDAINE A., AVIT G., GIL E., BOUGEROL C., LEKHAL K., REVERET F., LEYMARIE J., VARENNE C., MONIER G., CASTELLUCI D.
GaN nanostructures and nanowires with exceptional lengths and great optical and crystallographic properties grown by Hydride Vapor Phase Epitaxy (HVPE)



ANDRE Y., AVIT G., GIL E., TRASSOUDAINE A., BOUGEROL C., GAYRAL B., LEROUX C., DUBROVSKII V., VARENNE C., MONIER G., REVERET F., LEYMARIE J., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of III-V semiconductor nanostructures and nanowires



ANDRE Y., AVIT G., LEKHAL K., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., FONTANILLE P., PIERRE G., PAGET D., ROWE A., PETIT E., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications



AFF
AVIT G., AJIB R., ANDRE Y., GIL E., TRASSOUDAINE A., LEKHAL K., LEROUX C., BOUGEROL C., HOGGAN P., MONIER G., VARENNE C., REVERET F., CASTELLUCI D.
HVPE of III-V long nanowires; growth physics and properties



AVIT G., ANDRE Y., DUBROVSKII V., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., REVERET F., HOGGAN P., CASTELLUCI D., GLAS F., PAGET D.
Hydride VPE growth of III-V nanowires: growth properties, crystal structure



AVIT G., LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., REVERET F., CASTELLUCI D.
Hydride Vapor Phase Epitaxy: a highly efficient tool for the synthesis of great quality GaN based material on sapphire and silicon



2012
ACL
AVIT G., LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., VARENNE C., BOUGEROL C., MONIER G., CASTELLUCI D.
Catalyst-assisted Hydride Vapor Phase Epitaxy of GaN nanowires: exceptional length and constant rod like shape capability



ANDRE Y., TRASSOUDAINE A., GIL E., LEKHAL K., GOURMALACHELDA O., CASTELLUCI D., CADORET R.
Demonstration of crystal-vapor equilibrium leading to a growth blockade of GaN during selective area growth



LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., AVIT G., CELLIER J., CASTELLUCI D.
Exceptional crystal defined bunched and hyperbunched GaN nanorods grown by catalyst-free HVPE



COM
GIL E., ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., ROBERTGOUMET C., CASTELLUCI D., BIDEUX L.
Catalyst-assisted Hydride Vapour Phase Epitaxy of III-V nanowires: exceptional length, constant rodlike shape and defect-free crystal capability



ANDRE Y., LEKHAL K., AVIT G., TRASSOUDAINE A., GIL E., BOUGEROL C., VARENNE C., REVERET F., CASTELLUCI D., MONIER G., BIDEUX L.
Catalyst-free and catalyst-assisted hydride vapour phase epitaxy growth of GaN nanowires



2011
LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., VARENNE C., MONIER G., CASTELLUCI D., BIDEUX L.
HVPE and VLS-HVPE synthesis of GaN nanowires and nanostructures



2010
ACL
CHELDAGOURMALA O., TRASSOUDAINE A., ANDRE Y., BOUCHOULE S., GIL E., TOURRET J., CASTELLUCI D., CADORET R.
Complete HVPE experimental investigations : cartography of SAG GaN towards quasi-substrates or nanostructures



RAMDANI M., GIL E., LEROUX C., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., BIDEUX L., MONIER G., ROBERTGOURMET C., KULKA R.
Fast Growth Synthesis of GaAs Nanowires with Exceptional Length



2009
TOURRET J., GOURMALA O., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)



2008
ACTI
TOURRET J., GOURMALA O., TRASSOUDAINE A., ANDRE Y., GIL E., CASTELLUCI D., CADORET R.
Low-cost high-quality GaN by one-step growth



COM
GOURMALA O., TRASSOUDAINE A., ANDRE Y., TOURRET J., CASTELLUCI D., CADORET R., GIL E.
Experimental conditions influence on growth rate and quality of GaN layers by standard and ELO HVPE



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BIDEUX L., MONIER G., ROBERTGOUMET C., LEROUX C.
HVPE process : an effective tool for the bottom-up shaping of micro- and nano-objects with controlled morphology



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BODIN A., LEROUX C., BIDEUX L., MONIER G., AWITOR O., ROBERTGOUMET C., KUPKA R.
High aspect ratio GaAs nanowires grown by Hydride Vapor Phase Epitaxy



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BIDEUX L., MONIER G., ROBERTGOUMET C., LEROUX C., FONTAINE C.
Selective growth of III-V nanowires and micro- nano- objects by HVPE



AFF
CHELDAGOURMALA O., TOURRET J., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
Experimental conditions influence on growth rate and quality of GaN layers by SAG and ELO HVPE



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BODIN A., LEROUX C., BIDEUX L., MONIER G., AWITOR O., ROBERTGOUMET C., KUPKA R.
VLS-HVPE : a tool for the synthesis of lengthy semiconductor nanowires



GOURMALA O., TOURRET J., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
Étude cristallographique et physique de la croissance sélective HVPE de GaN



2007
ACL
ANDRE Y., TRASSOUDAINE A., TOURRET J., CADORET R., GIL E., CASTELLUCI D., AOUDE O., DISSEIX P.
Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers



RAMDANI R., GIL E., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., PAGET D., ROWE A., GERARD B.
Selective epitaxial growth of GaAs tips for local spin injector applications



COM
TOURRET J., GOURMALA O., TRASSOUDAINE A., ANDRE Y., GIL E., CASTELLUCI D., CADORET R.
Low cost high quality GaN by one step growth



AFF
GOURMALA O., TOURRET J., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
Carrier gas composition, growth temperature and III/V ratio variation for ELO GaN grown by HVPE



2006
ACTI
SAOUDI R., GIL E., TRASSOUDAINE A., CASTELLUCI D., RAMDANI R., DARRAUD C.
Fabrication of photonic crystals by anisotropic crystalline growth by the hydrides method



AFF
RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BIDEUX L., MONIER G., ROBERTGOUMET C., LEROUX C., FONTAINE C.
Croissance sélective HVPE à morphologie contrôlée à l'échelle sub-micrométrique et nanométrique de semiconducteurs III-V



2005
RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A.
Croissance sélective HVPE à morphologie contrôlée à l'échelle submicrométrique et nanométrique de semiconducteurs III-V



2004
ACTI
GIL E., TRASSOUDAINE A., CASTELLUCI D., PIMPINELLI A., SAOUDI R., PARRIAUX O., MURAVAUD A., DARRAUD C.
Submicrometer scale growth morphology control for the making of photonic crystal structures



GIL E., TRASSOUDAINE A., CASTELLUCI D., PIMPINELLI A., SAOUDI R., PARRIAUX O., MURAVAUD A., DARRAUD C.
Submicrometer scale growth morphology control: a new route for the making of photonic crystal structures ?



2001
ACL
GIL E., NAPIERALA J., CASTELLUCI D., PIMPINELLI A., CADORET R., GERARD B.
Selective growth of GaAs by HVPE : keys for accurate control of the growth morphologies



ACTI
NAPIERALA J., GIL E., CASTELLUCI D., PIMPINELLI A., GERARD B.
Control of the growth morphologies of GaAs stripes grown on patterned substrates by HVPE



GIL E., VIDECOQ A., NAPIERALA J., CASTELLUCI D., PIMPINELLI A., GERARD B., JIMENEZ J., AVELLA M.
High-quality GaAs-related lateral junctions on Si by conformal growth



1999
ACL
GOUMET E., GIL E., CADORET R., CASTELLUCI D., LEYMARIE J., VASSON A., BIDEUX L., GRUZZA B.
Epitaxial growth of InAs(x)P(1-x)/InP quantum wells by Hydride Vapour Phase Epitaxy



TRASSOUDAINE A., AUJOL E., DISSEIX P., CASTELLUCI D., CADORET R.
Experimental and theoretical study of the growth of GaN on sapphire by HVPE



ACTI
GIL E., NAPIERALA J., CASTELLUCI D., PIMPINELLI A., GERARD B., PRIBAT D.
Kinetic modelling of the selective epitaxy of GaAs on patterned substrates by HVPE. Application to the conformal growth of low defect density GaAs layers on silicon



1998
ACL
TRASSOUDAINE A., PARILLAUD O., GOUMET E., CASTELLUCI D., GIL E., CADORET R.
Kinetic study of Si incorporation in InP by the Hydride Vapour Phase Epitaxy



1995
ACTI
PARILLAUD O., GERARD B., BISARO R., LEYMARIE J., PIFFAULT N., GIL E., CASTELLUCI D., GOUMET E., VASSON A., VASSON A., PRIBAT D., CADORET R.
Low defect density InP films grown on Si by HVPE using a new crystal refining technique





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