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UMR 6602 - UCA/CNRS/SIGMA

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Trassoudaine Agnès


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Fonction : Enseignant chercheur (Permanent Ip)
Axe : Photon
Thème : Minamat
Téléphone : +33473405449
Fax : +33 4 7340 7340



Publications associées :
63 publication trouvées


2016
ACL
AVIT G., ANDRE Y., BOUGEROL C., CASTELLUCI D., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., RAMDANI M., ROCHE E., TRASSOUDAINE A.
GaN rods grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE core/shell structures



TRASSOUDAINE A., ROCHE E., BOUGEROL C., ANDRE Y., AVIT G., MONIER G., RAMDANI M., GIL E., CASTELLUCI D., DUBROVSKII V.
Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy



OS
DONG Z., ANDRE Y., DUBROVSKII V., BOUGEROL C., MONIER G., RAMDANI R., TRASSOUDAINE A., LEROUX C., CASTELLUCI D., GIL E.
Laser Optics (LO), 2016 International Conference



2015
GIL E., ANDRE Y., CADORET R., TRASSOUDAINE A.
Hydride Vapor Phase Epitaxy for current III-V and nitride semiconductor compound issues



INV
TRASSOUDAINE A.
Hydride VPE for current III-V and nitride semiconductor compound issues.



TRASSOUDAINE A.
Hydride VPE for current III-V and nitride semiconductor compound issues.



COM
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., DISSEIX P., DUBROVSKII V., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., LEYMARIE J., MEDARD F., MONIER G., RAMDANI M., REVERET F., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy



AFF
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., DISSEIX P., DUBROVSKII V., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., LEYMARIE J., MEDARD F., MONIER G., RAMDANI M., REVERET F., TRASSOUDAINE A.
(In,Ga)N nanostructures grown by Hydride Vapor Phase Epitaxy



DONG Z., ANDRE Y., GIL E., DUBROVSKII V., LEROUX C., BOUGEROL C., RAMDANI R., VARENNE C., AUDONNET F., FONTANILLE P., TRASSOUDAINE A., CASTELLUCI D., HARMOND J.
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE



DONG Z., ANDRE Y., GIL E., DUBROVSKII V., LEROUX C., BOUGEROL C., RAMDANI R., VARENNE C., AUDONNET F., FONTANILLE P., TRASSOUDAINE A., CASTELLUCI D., HARMOND J.
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE



ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires



2014
ACL
GIL E., DUBROVSKII V., AVIT G., ANDRE Y., LEROUX C., LEKHAL K., GRECENKOV J., TRASSOUDAINE A., CASTELLUCI D., MONIER G., RAMDANI M., ROBERTGOUMET C., BIDEUX L., HARMAND J., GLAS F.
Record pure zincblende phase in GaAs nanowires down to 5 nm in radius



AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultra-long and defect-free GaN nanowires grown by the HVPE process



ANDRE Y., LEKHAL K., HOGGAN P., AVIT G., CADIZ F., ROWE A., PAGET D., PETIT E., LEROUX C., TRASSOUDAINE A., REDARAMDANI M., MONIER G., COLAS D., AJIB R., CASTELLUCI D., GIL E.
Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation



ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure



COM
TRASSOUDAINE A., REDARAMDANI M., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., DOMINIQUE C.
Fast growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy.



DONG Z., ANDRE Y., CASTELLUCI D., GIL E., TRASSOUDAINE A.
HVPE Growth of GaAs Nanowires



TRASSOUDAINE A., REDARAMDANI M., ANDRE Y., AVIT G., ROCHE E., GAYRAL B., BOUGEROL C., FERRET P., GIL E., REVERET F., LEYMARIE J., MONIER G., DOMINIQUE C.
HVPE novel potential for the synthesis of nitride nanostructures.



AFF
ROCHE E., TRASSOUDAINE A., ANDRE Y., CASTELLUCI D., AVIT G., RAMDANI M., GIL E.
HVPE synthesis of InGaN nanowires



2013
ACL
GIL E., ANDRE Y., REDARAMDANI M., FONTAINE C., TRASSOUDAINE A., CASTELLUCI D.
Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapour Phase Epitaxy (HVPE)



ACTI
ANDRE Y., AVIT G., LEKHAL K., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., MICHAUD P., FONTANILLE P., PIERRE G., PAGET D., ROWE A., PETIT E., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications



COM
ANDRE Y., TRASSOUDAINE A., AVIT G., GIL E., BOUGEROL C., LEKHAL K., REVERET F., LEYMARIE J., VARENNE C., MONIER G., CASTELLUCI D.
GaN nanostructures and nanowires with exceptional lengths and great optical and crystallographic properties grown by Hydride Vapor Phase Epitaxy (HVPE)



ANDRE Y., AVIT G., GIL E., TRASSOUDAINE A., BOUGEROL C., GAYRAL B., LEROUX C., DUBROVSKII V., VARENNE C., MONIER G., REVERET F., LEYMARIE J., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of III-V semiconductor nanostructures and nanowires



ANDRE Y., AVIT G., LEKHAL K., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., FONTANILLE P., PIERRE G., PAGET D., ROWE A., PETIT E., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications



AFF
AVIT G., AJIB R., ANDRE Y., GIL E., TRASSOUDAINE A., LEKHAL K., LEROUX C., BOUGEROL C., HOGGAN P., MONIER G., VARENNE C., REVERET F., CASTELLUCI D.
HVPE of III-V long nanowires; growth physics and properties



AVIT G., ANDRE Y., DUBROVSKII V., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., REVERET F., HOGGAN P., CASTELLUCI D., GLAS F., PAGET D.
Hydride VPE growth of III-V nanowires: growth properties, crystal structure



AVIT G., LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., REVERET F., CASTELLUCI D.
Hydride Vapor Phase Epitaxy: a highly efficient tool for the synthesis of great quality GaN based material on sapphire and silicon



2012
ACL
AVIT G., LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., VARENNE C., BOUGEROL C., MONIER G., CASTELLUCI D.
Catalyst-assisted Hydride Vapor Phase Epitaxy of GaN nanowires: exceptional length and constant rod like shape capability



ANDRE Y., TRASSOUDAINE A., GIL E., LEKHAL K., GOURMALACHELDA O., CASTELLUCI D., CADORET R.
Demonstration of crystal-vapor equilibrium leading to a growth blockade of GaN during selective area growth



LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., AVIT G., CELLIER J., CASTELLUCI D.
Exceptional crystal defined bunched and hyperbunched GaN nanorods grown by catalyst-free HVPE



INV
TRASSOUDAINE A.
Croissance de nanofils GaN par HVPE



COM
GIL E., ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., ROBERTGOUMET C., CASTELLUCI D., BIDEUX L.
Catalyst-assisted Hydride Vapour Phase Epitaxy of III-V nanowires: exceptional length, constant rodlike shape and defect-free crystal capability



ANDRE Y., LEKHAL K., AVIT G., TRASSOUDAINE A., GIL E., BOUGEROL C., VARENNE C., REVERET F., CASTELLUCI D., MONIER G., BIDEUX L.
Catalyst-free and catalyst-assisted hydride vapour phase epitaxy growth of GaN nanowires



2011
LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., VARENNE C., MONIER G., CASTELLUCI D., BIDEUX L.
HVPE and VLS-HVPE synthesis of GaN nanowires and nanostructures



2010
ACL
CHELDAGOURMALA O., TRASSOUDAINE A., ANDRE Y., BOUCHOULE S., GIL E., TOURRET J., CASTELLUCI D., CADORET R.
Complete HVPE experimental investigations : cartography of SAG GaN towards quasi-substrates or nanostructures



RAMDANI M., GIL E., LEROUX C., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., BIDEUX L., MONIER G., ROBERTGOURMET C., KULKA R.
Fast Growth Synthesis of GaAs Nanowires with Exceptional Length



2009
TOURRET J., GOURMALA O., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)



2008
AOUDE O., DISSEIX P., LEYMARIE J., VASSON A., LEROUX M., AUJOL E., BEAUMONT B., TRASSOUDAINE A., ANDRE Y.
Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN



ACTI
TOURRET J., GOURMALA O., TRASSOUDAINE A., ANDRE Y., GIL E., CASTELLUCI D., CADORET R.
Low-cost high-quality GaN by one-step growth



COM
GOURMALA O., TRASSOUDAINE A., ANDRE Y., TOURRET J., CASTELLUCI D., CADORET R., GIL E.
Experimental conditions influence on growth rate and quality of GaN layers by standard and ELO HVPE



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BIDEUX L., MONIER G., ROBERTGOUMET C., LEROUX C.
HVPE process : an effective tool for the bottom-up shaping of micro- and nano-objects with controlled morphology



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BODIN A., LEROUX C., BIDEUX L., MONIER G., AWITOR O., ROBERTGOUMET C., KUPKA R.
High aspect ratio GaAs nanowires grown by Hydride Vapor Phase Epitaxy



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BIDEUX L., MONIER G., ROBERTGOUMET C., LEROUX C., FONTAINE C.
Selective growth of III-V nanowires and micro- nano- objects by HVPE



AFF
CHELDAGOURMALA O., TOURRET J., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
Experimental conditions influence on growth rate and quality of GaN layers by SAG and ELO HVPE



RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BODIN A., LEROUX C., BIDEUX L., MONIER G., AWITOR O., ROBERTGOUMET C., KUPKA R.
VLS-HVPE : a tool for the synthesis of lengthy semiconductor nanowires



GOURMALA O., TOURRET J., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
Étude cristallographique et physique de la croissance sélective HVPE de GaN



2007
ACL
ANDRE Y., TRASSOUDAINE A., TOURRET J., CADORET R., GIL E., CASTELLUCI D., AOUDE O., DISSEIX P.
Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers



RAMDANI R., GIL E., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., PAGET D., ROWE A., GERARD B.
Selective epitaxial growth of GaAs tips for local spin injector applications



COM
TOURRET J., GOURMALA O., TRASSOUDAINE A., ANDRE Y., GIL E., CASTELLUCI D., CADORET R.
Low cost high quality GaN by one step growth



AFF
GOURMALA O., TOURRET J., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
Carrier gas composition, growth temperature and III/V ratio variation for ELO GaN grown by HVPE



GOURMALA O., TOURRET J., TRASSOUDAINE A., ANDRE Y., CADORET R., CASTELLUCI R., GIL E.
The Optimisation of a 2” HVPE Reactor For High Quality Thick GaN Layers



2006
ACL
AOUDE O., DISSEIX P., LEYMARIE J., VASSON A., AUJOL E., BEAUMONT B., TRASSOUDAINE A., ANDRE Y.
Continuous wave and ultra-fast reflectivity studies for the determination of GaN excitonic oscillator strengths as a function of the in-plane biaxial strain



ACTI
SAOUDI R., GIL E., TRASSOUDAINE A., CASTELLUCI D., RAMDANI R., DARRAUD C.
Fabrication of photonic crystals by anisotropic crystalline growth by the hydrides method



AFF
RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., BIDEUX L., MONIER G., ROBERTGOUMET C., LEROUX C., FONTAINE C.
Croissance sélective HVPE à morphologie contrôlée à l'échelle sub-micrométrique et nanométrique de semiconducteurs III-V



2005
RAMDANI M., GIL E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A.
Croissance sélective HVPE à morphologie contrôlée à l'échelle submicrométrique et nanométrique de semiconducteurs III-V



2004
ACL
TRASSOUDAINE A., CADORET R., GIL E.
Temperature influence on the growth of gallium nitride by HVPE in a mixed H-2/N-2 carrier gas



ACTI
GIL E., TRASSOUDAINE A., CASTELLUCI D., PIMPINELLI A., SAOUDI R., PARRIAUX O., MURAVAUD A., DARRAUD C.
Submicrometer scale growth morphology control for the making of photonic crystal structures



GIL E., TRASSOUDAINE A., CASTELLUCI D., PIMPINELLI A., SAOUDI R., PARRIAUX O., MURAVAUD A., DARRAUD C.
Submicrometer scale growth morphology control: a new route for the making of photonic crystal structures ?



2003
ACL
GIL E., NAPIERALA J., PIMPINELLI A., CADORET R., TRASSOUDAINE A.
Direct condensation modelling for a two-particle growth system : application to GaAs grown by hydride vapour phase epitaxy



PIMPINELLI A., CADORET R., GIL E., TRASSOUDAINE A.
Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces



2001
AUJOL E., NAPIERALA J., TRASSOUDAINE A., GIL E., CADORET R.
Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen



1999
TRASSOUDAINE A., AUJOL E., DISSEIX P., CASTELLUCI D., CADORET R.
Experimental and theoretical study of the growth of GaN on sapphire by HVPE



1998
TRASSOUDAINE A., PARILLAUD O., GOUMET E., CASTELLUCI D., GIL E., CADORET R.
Kinetic study of Si incorporation in InP by the Hydride Vapour Phase Epitaxy





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