Langues

Laboratoire de recherche

UMR 6602 - UCA/CNRS
Tutelle secondaire CHU Clermont-Ferrand
Membre de Clermont Auvergne INP

Prix Jeunes Chercheurs

3 prix gagnés par nos docteurs à la 27e édition des Prix Jeunes Chercheurs de Clermont-Ferrand :

Prix Clermont Auvergne Innovation pour Guillaume Mougeot, Docteur en Image, système de perception, robotique (ED SPI) pour sa thèse en collaboration avec l'IGReD et Oxford (Nuclear Plant Envelope).

Prix INP Polytech pour Guy Vano Tsamo Tagouche, Docteur en Ingénierie des Matériaux (ED SPI) pour sa thèse.

Prix de la Fondation UCA pour Ismaël Septembre, Docteur en Physique - Milieux denses et matériaux (ED SF) pour sa thèse.

Nous félicitons Sayed Mohammadreza Shetab Bushehri, Docteur en Génie Electrique, Electronique et Systèmes (ED SPI) qui a brillamment défendu la robotique de manipulation des objets déformables.

Plateforme multi-techniques d’élaboration et de caractérisation

L'Institut Pascal, vient de se doter d'un nouveau Système d'Analyse et de Structuration des Surfaces (SASS) grâce aux financements de l'Union Européenne dans le cadre du FEDER, de la Région AURA et avec le soutien de l'UCA.Cette plateforme est dédiée à l’analyse de matériaux organiques et inorganiques avec un volume qui s'étend de la surface à une profondeur d'environ 50-100 Å. Les techniques de caractérisation disponibles sont multiples : AR-XPS, UPS, ARPES, REELS apportant des informations différentes liées à la profondeur d’analyse et à l’interaction du rayonnement électromagnétique avec la matière.

Séminaire axe ISPR

Ce lundi 28 novembre, les membres de l'axe ISPR de l'Institut Pascal se retrouvent au vert pour leur séminaire annuel permettant de faire un point sur l'ensemble des activités scientifiques du groupe et d'intégrer les nouveaux arrivants.

Collaboration Michelin - IP

Dans le cadre d'une collaboration entre l'Institut Pascal et la manufacture Michelin, une démonstration réelle s'est déroulée le jeudi 10 novembre 2022 afin de montrer les capacités d'un véhicule autonome à évoluer à 40 km/h sur une  piste particulièrement éprouvante pour les pneumatiques. Cette première démonstration rentre dans un projet plus global qui doit permettre aux deux partenaires de montrer les capacités de ce type de véhicule à réaliser en autonomie certains tests de pneumatiques mais également de travailler sur le développement de nouveaux tests dont certains plus spécifiques pour ces véhicules de demain.

La fête de la science 2022

Pour l'édition 2022 de la Fête de la Science, l'Institut Pascal était présent sur tous ses thèmes de recherche sur des sites différents du campus des Cézeaux. Les démonstrations aux chercheurs en herbe allaient de la plateforme Pavin Solaire, en passant par les véhicules autonomes, les robots et la 3D, les pouvoirs magiques de la lumière noire et sous forme d'un escape game pour les mystères des capteurs de gaz.

Journées robotiques agricoles

Les deux journées techniques du réseau R2M et du projet AgROBOFood co organisées par INRAE, CEA et Institut Pascal ont lieu ces 12 & 13 octobre sur le site de Montoldre autour des thèmes de la navigation, la sécurité et l’intelligence artificielle pour le développement de robots mobiles en agriculture et en environnement ouvert.

Annuaire

Leymarie Joël


Photo
Fonction : Permanent (UCA)
Lieu d'exercice : EUPI Bat. 3/4/L
Equipe : N2-Spectro. Opt. (PHOTON)
Section CNU : 28
Téléphone : +33473407026


Publications associées :
44 publications trouvées


2022
ACL
MEHDI H., REVERET F., ROBERT-GOUMET C., BIDEUX L., GRUZZA B., HOGGAN P., LEYMARIE J., ANDRE Y., GIL E., PELISSIER B., LEVERT T., PAGET D., MONIER G.
Investigation of n2 plasma gaas surface passivation efficiency against air exposure: towards an enhanced diode
applied surface science, vol. 579, p. 152191
2022 apr


2021
HIJAZI H., PAGET D., MONIER G., GRÉGOIRE G., LEYMARIE J., GIL E., CADIZ F., ROBERT-GOUMET C., ANDRÉ Y.
Charge and spin transport over record distances in GaAs metallic n -type nanowires
Physical Review B, vol. 103, p. 195314
2021 may


2020
ZEGHOUANE M., AVIT G., ANDRE Y., TALIERCIO T., FERRET P., GIL E., CASTELLUCI D., DISSEIX P., LEYMARIE J., TOURNIE E., TRASSOUDAINE A.
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy
crystal growth \& design, vol. 20, p. 2232
2020


ANDRE Y., ISIK GOKTAS N., MONIER G., HIJAZI H., MEHDI H., BOUGEROL C., BIDEUX L., TRASSOUDAINE A., PAGET D., LEYMARIE J., GIL E., ROBERT-GOUMET C., LAPIERRE R.
Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
Nano Express, vol. 1, p. 020019
2020 sep 04


2019
JAMADI O., REVERET F., SOLNYSHKOV D., DISSEIX P., LEYMARIE J., MALLET-DIDA L., BRIMONT C., GUILLET T., LAFOSSE X., BOUCHOULE S., SEMOND F., LEROUX M., ZUNIGA-PEREZ J., MALPUECH G.
Competition between horizontal and vertical polariton lasing in planar microcavities
physical review b, vol. 99, p. 085304
2019


MEHDI H., REVERET F., BOUGEROL C., ROBERT-GOUMET C., HOGGAN P., BIDEUX L., GRUZZA B., LEYMARIE J., MONIER G.
Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process
Applied Surface Science, vol. 495, p. 143586
2019


INV
REVERET F., JAMADI O., KREYDER G., DISSEIX P., MEDARD F., LEYMARIE J., MIHAILOVIC M., MOREAU A., SOLNYSHKOV D., DEPARIS C., LEROUX M., CAMBRIL E., BOUCHOULE S., GUILLET T., BRIMONT C., ZUNIGA-PEREZ J., MALPUECH G.
Polariton lasing in planar microcavities and waveguides up to room temperature
10th Russian-French Workshop on Nanosciences and Nanotechnologies
2019


AFF
ROBERT GOUMET C., MONIER G., MEHDI H., HOGGAN P., BIDEUX L., REVERET F., LEYMARIE J., MAHJOUB A., PELISSIER B.
Toward optimum N2 plasma nitriding process for GaAs(100) surface passivation
Journées Surfaces et Interfaces - JSI Nancy, Janvier 2019
2019


2018
ACL
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., REVERET F., GIL E., MEDARD F., LEYMARIE J., JEAN T., DUBROVSKII V., TRASSOUDAINE A.
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red
Nanotechnology, vol. 29, p. 465602
2018


JAMADI O., REVERET F., DISSEIX P., MEDARD F., LEYMARIE J., MOREAU A., SOLNYSHKOV D., DEPARIS C., LEROUX M., CAMBRIL E., BOUCHOULE S., ZUNIGA-PEREZ J., MALPUECH G.
Edge-emitting polariton laser and amplifier based on a ZnO waveguide
Light: Science & Applications, vol. 7, p. 84
2018


COM
JAMADI O., DEPARIS C., REVERET F., BOUCHOULE S., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., LEROUX M., ZUNIGA-PEREZ J.
Monolithic ZnO optical microcavities : from materials science to room-temperature polariton laser
SPIE Photonics West
2018


ZUNIGA-PEREZ J., JAMADI AND  CATHERINE DEPARIS O., REVERET F., LAFOSSE X., BOUCHOULE AND  MATHIEU LEROUX S., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J.
Room-temperature edge-emitting ZnO polariton lasers based on monolithic waweguides
19th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN)
2018


AVIT G., ZEGHOUANE M., ANDRE Y., BOUGEROL C., GIL E., CASTELLUCI D., FERRET P., ROCHE E., LEYMARIE J., MEDARD F., DUBROVSKI V., TRASSOUDAINE A.
Self-induced growth of InN nanowires and selective area growth of In(Ga)N nanowires with a controlled mole fraction by HVPE
ISGN 7th International Symposium on Growth of III-Nitrides, Varsovie, Pologne
2018


ZUNIGA-PEREZ J., JAMADI O., DEPARIS C., REVERET F., LAFOSSE X., BOUCHOULE S., LEROUX M., DISSEIX AND  FRANCOIS MEDARD P., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J.
ZnO monolithic waveguides : edge-emitting polariton lasers and amplifiers based on propagating polaritons
Photonic, Quantum, and Nonlinear Optics Workshop
2018


AFF
ANDRE Y., ZEGHOUANE M., AVIT G., ROCHE E., BOUGEROL C., LEYMARIE J., MEDARD F., MONIER G., REVERET F., CASTELLUCI D., DUBROVSKII V., GIL E., TRASSOUDAINE A.
Hydride Vapor Phase Epitaxy of binary and ternary III-Nitride nanowires
Nanowire week conference 2018, Hamilton, Canada
2018


2017
ACTI
ANDRE Y., DONG Z., ROCHE E., AVIT G., DUBROVSKII V., BOUGEROL C., VARENNE C., AUDONNET F., FONTANILLE P., LEYMARIE J., MÉDARD F., MONIER G., REVERET F., CASTELLUCI D., TRASSOUDAINE A., GIL E.
Hydride Vapor Phase Epitaxy (HVPE) growth of III-V and III-Nitrides nanowires on silicon
Energy Materials Nanotechnology EMN Epitaxy
2017 11


AFF
AVIT G., ROCHE E., ZEGHOUANE M., ANDRE Y., GIL E., TRASSOUDAINE A., LEYMARIE J., MEDARD F.
Defect-free InGaN nanowires on silicon whatever the indium composition
12th International Conference on Nitride Semiconductors, Strasbourg
2017


ZEGHOUANE M., ANDRE Y., AVIT G., CASTELLUCI C., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2017, Lille
2017


JAMADI O., REVERET F., DISSEIX P., MEDARD F., MIHAILOVIC M., LAFOSSE X., BOUCHOULE S., SEMOND F., ZUNIGA-PEREZ J., LEYMARIE J.
Low threshold lasing in bulk GaN microcavity up to 400 K
18th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN)
2017


2016
ACL
REVERET F., BIGNET L., ZHIGANG W., LAFOSSE X., PATRIARCHE G., DISSEIX P., MEDARD F., MIHAILOVIC M., LEYMARIE J., ZUNIGA-PEREZ J., BOUCHOULE S.
High reflectance dielectric distributed bragg reflectors for near ultra-violet planar microcavities: sio2/hfo2versus sio2/sinx
journal of applied physics, vol. 120, p. 093107
2016


ZUNIGA-PEREZ J., KAPPEI L., DEPARIS C., REVERET F., GRUNDMANN M., DE PRADO E., JAMADI O., LEYMARIE J., CHENOT S., LEROUX M.
Homoepitaxial nonpolar (10-10) zno/znmgo monolithic microcavities: towards reduced photonic disorder
applied physics letters, vol. 108, p. 251904
2016


JAMADI O., REVERET F., MALLET E., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., LAFOSSE X., BOUCHOULE S., LI F., LEROUX M., SEMOND F., ZUNIGA-PEREZ J.
Polariton condensation phase diagram in wide-band-gap planar microcavities: gan versus zno
physical review b, vol. 93, p. 115205
2016


INV
LEYMARIE J., JAMADI O., REVERET F., MALLET E., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., BOUCHOULE S., X L., LI F., LEROUX M., SEMOND F., ZUNIGA-PEREZ J.
Comparison of polariton condensation phase diagrams in GaN and ZnO planar microcavities
15èmes Journées de la Matière Condensée (JMC15), Bordeaux 22-26 août 2016, Société Française de Physique.
2016


AFF
ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., GIL E., LEYMARIE J., MEDARD F., REVERET F., .
Controlled Composition in Indium-rich InxGa1-xN nanowires grown by Hydride Vapor Phase Epitaxy
IWN International Workshop on Nitride Semiconductors, Orlando, Floride
2016


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2016, Montpellier
2016


2015
ACL
LI X., SUNDARAM S., DISSEIX P., LE GAC G., BOUCHOULE S., PATRIARCHE G., REVERET F., LEYMARIE J., EL GMILI Y., MOUDAKIR T., GENTY F., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
Algan-based mqws grown on a thick relaxed algan buffer on aln templates emitting at 285 nm
optical materials express, vol. 5, p. 380
2015


LI X., SUNDARAM S., EL GMILI Y., GENTY F., BOUCHOULE S., PATRIACHE G., DISSEIX P., REVERET F., LEYMARIE J., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
Movpe grown periodic aln/baln heterostructure with high boron content
journal of crystal growth, vol. 414, p. 119
2015


REVERET F., ANDRE Y., GOURMALA O., LEYMARIE J., MIHAILOVIC M., LAGARDE D., GIL E., CASTELLUCI D., TRASSOUDAINE A.
Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy
Journal of Crystal Growth, vol. 421, p. 27--32
2015


LI X., LE GAC G., BOUCHOULE S., EL GMILI Y., PATRIARCHE G., SUNDARAM S., DISSEIX P., REVERET F., LEYMARIE J., STREQUE J., GENTY F., SALVESTRINI J., DUPUIS R., LI X., VOSS P., OUGAZZADEN A.
Structural and optical investigations of algan mqws grown on a relaxed algan buffer on aln templates for emission at 280 nm
journal of crystal growth, vol. 432, p. 37
2015


COM
LE GAC G., LI X., SUNDARAM S., EL GMILI Y., MOUDAKIR T., DISSEIX P., REVERET F., LAGARDE D., LEYMARIE J., BOUCHOULE S., PATRIARCHE G., GENTY F., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
Algan-based mqws emitting at 280nm for vertical cavity surface emitting lasers
Optics infobase conference papers
2015


AFF
ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., BOUGEROL C., DUBROVSKI V., DUSSAIGNE A., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2015, Grenoble
2015


2014
ACL
MALLET E., REVERET F., DISSEIX P., SHUBINA T., LEYMARIE J.
Influence of excitonic oscillator strengths on the optical properties of gan and zno
physical review b - condensed matter and materials physics, vol. 90, p. 045204
2014


ZUNIGA-PEREZ J., MALLET E., HAHE R., RASHID M., BOUCHOULE S., BRIMONT C., DISSEIX P., DUBOZ J., GOMME G., GUILLET T., JAMADI O., LAFOSSE X., LEROUX M., LEYMARIE J., LI F., REVERET F., SEMOND F.
Patterned silicon substrates: a common platform for room temperature gan and zno polariton lasers
applied physics letters, vol. 104, p. 241113
2014


LANTY G., JEMLI K., WEI Y., LEYMARIE J., EVEN J., LAURET J., DELEPORTE E.
Room-temperature optical tunability and inhomogeneous broadening in 2d-layered organic-inorganic perovskite pseudobinary alloys
journal of physical chemistry letters, vol. 5, p. 3958
2014


AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
Nano Letters, vol. 14, p. 559--562
2014


ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure
SPIE
2014


COM
RAMDANI R., TRASSOUDAINE A., AVIT G., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., CASTELLUCI D.
Fast Growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy
IWNS International Workshop on Nitride Semiconductors, Wroclaw Pologne
2014


2013
ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride vpe: the unexpected process for the fast growth of gaas and gan nanowires with record aspect ratio and polytypism-free crystalline structure
micro/nano materials, devices, and systems
2013


1999
ACL
ROBERT C., GIL E., CADORET R., CASTELLUCI D., LEYMARIE J., VASSON A., VASSON A., BIDEUX L., GRUZZA B.
Epitaxial growth of inasxp1-x/inp quantum wells by hvpe
applied surface science, vol. 142, p. 637--641
1999


1994
PIFFAULT N., GIL E., LEYMARIE J., MONIER C., CLARK S., ANDERSON M., CADORET R., VASSON A., VASSON A.
Epitaxial-growth and kinetic-study of mismatched (ga,in)as/inp layers grown by hydride vapor-phase epitaxy
journal of crystal growth, vol. 135, p. 11--22
1994


1993
DISSEIX P., LEYMARIE J., VASSON A., VASSON A., BANVILLET H., GIL E., PIFFAULT N., CADORET R.
Photoluminescence studies in strained inas/inp quantum-wells grown by hydride vapor-phase epitaxy
semiconductor science and technology, vol. 8, p. 1666--1670
1993


1991
GIL E., BANVILLET H., PIFFAULT N., CADORET R., FERDJANI K., LEYMARIE J., VASSON A., VASSON A., TABATA A., BENYATTOU T., GUILLOT G.
Inas/inp strained quantum wells growth by hydride vapor phase epitaxy and photoluminescence studies
journal of electrochemical society, vol. 138, p. 238--248
1991




<== retour à l'annuaire

Membres - ISPR

Leymarie Joël


Photo
Fonction : Permanent (UCA)
Lieu d'exercice : EUPI Bat. 3/4/L
Equipe : N2-Spectro. Opt. (PHOTON)
Section CNU : 28
Téléphone : +33473407026


Publications associées :
44 publications trouvées


2022
ACL
MEHDI H., REVERET F., ROBERT-GOUMET C., BIDEUX L., GRUZZA B., HOGGAN P., LEYMARIE J., ANDRE Y., GIL E., PELISSIER B., LEVERT T., PAGET D., MONIER G.
Investigation of n2 plasma gaas surface passivation efficiency against air exposure: towards an enhanced diode
applied surface science, vol. 579, p. 152191
2022 apr


2021
HIJAZI H., PAGET D., MONIER G., GR&EACUTE;GOIRE G., LEYMARIE J., GIL E., CADIZ F., ROBERT-GOUMET C., ANDR&EACUTE; Y.
Charge and spin transport over record distances in GaAs metallic n -type nanowires
Physical Review B, vol. 103, p. 195314
2021 may


2020
ZEGHOUANE M., AVIT G., ANDRE Y., TALIERCIO T., FERRET P., GIL E., CASTELLUCI D., DISSEIX P., LEYMARIE J., TOURNIE E., TRASSOUDAINE A.
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy
crystal growth \& design, vol. 20, p. 2232
2020


ANDRE Y., ISIK GOKTAS N., MONIER G., HIJAZI H., MEHDI H., BOUGEROL C., BIDEUX L., TRASSOUDAINE A., PAGET D., LEYMARIE J., GIL E., ROBERT-GOUMET C., LAPIERRE R.
Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
Nano Express, vol. 1, p. 020019
2020 sep 04


2019
JAMADI O., REVERET F., SOLNYSHKOV D., DISSEIX P., LEYMARIE J., MALLET-DIDA L., BRIMONT C., GUILLET T., LAFOSSE X., BOUCHOULE S., SEMOND F., LEROUX M., ZUNIGA-PEREZ J., MALPUECH G.
Competition between horizontal and vertical polariton lasing in planar microcavities
physical review b, vol. 99, p. 085304
2019


MEHDI H., REVERET F., BOUGEROL C., ROBERT-GOUMET C., HOGGAN P., BIDEUX L., GRUZZA B., LEYMARIE J., MONIER G.
Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process
Applied Surface Science, vol. 495, p. 143586
2019


INV
REVERET F., JAMADI O., KREYDER G., DISSEIX P., MEDARD F., LEYMARIE J., MIHAILOVIC M., MOREAU A., SOLNYSHKOV D., DEPARIS C., LEROUX M., CAMBRIL E., BOUCHOULE S., GUILLET T., BRIMONT C., ZUNIGA-PEREZ J., MALPUECH G.
Polariton lasing in planar microcavities and waveguides up to room temperature
10th Russian-French Workshop on Nanosciences and Nanotechnologies
2019


AFF
ROBERT GOUMET C., MONIER G., MEHDI H., HOGGAN P., BIDEUX L., REVERET F., LEYMARIE J., MAHJOUB A., PELISSIER B.
Toward optimum N2 plasma nitriding process for GaAs(100) surface passivation
Journées Surfaces et Interfaces - JSI Nancy, Janvier 2019
2019


2018
ACL
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., REVERET F., GIL E., MEDARD F., LEYMARIE J., JEAN T., DUBROVSKII V., TRASSOUDAINE A.
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red
Nanotechnology, vol. 29, p. 465602
2018


JAMADI O., REVERET F., DISSEIX P., MEDARD F., LEYMARIE J., MOREAU A., SOLNYSHKOV D., DEPARIS C., LEROUX M., CAMBRIL E., BOUCHOULE S., ZUNIGA-PEREZ J., MALPUECH G.
Edge-emitting polariton laser and amplifier based on a ZnO waveguide
Light: Science & Applications, vol. 7, p. 84
2018


COM
JAMADI O., DEPARIS C., REVERET F., BOUCHOULE S., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., LEROUX M., ZUNIGA-PEREZ J.
Monolithic ZnO optical microcavities : from materials science to room-temperature polariton laser
SPIE Photonics West
2018


ZUNIGA-PEREZ J., JAMADI AND  CATHERINE DEPARIS O., REVERET F., LAFOSSE X., BOUCHOULE AND  MATHIEU LEROUX S., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J.
Room-temperature edge-emitting ZnO polariton lasers based on monolithic waweguides
19th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN)
2018


AVIT G., ZEGHOUANE M., ANDRE Y., BOUGEROL C., GIL E., CASTELLUCI D., FERRET P., ROCHE E., LEYMARIE J., MEDARD F., DUBROVSKI V., TRASSOUDAINE A.
Self-induced growth of InN nanowires and selective area growth of In(Ga)N nanowires with a controlled mole fraction by HVPE
ISGN 7th International Symposium on Growth of III-Nitrides, Varsovie, Pologne
2018


ZUNIGA-PEREZ J., JAMADI O., DEPARIS C., REVERET F., LAFOSSE X., BOUCHOULE S., LEROUX M., DISSEIX AND  FRANCOIS MEDARD P., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J.
ZnO monolithic waveguides : edge-emitting polariton lasers and amplifiers based on propagating polaritons
Photonic, Quantum, and Nonlinear Optics Workshop
2018


AFF
ANDRE Y., ZEGHOUANE M., AVIT G., ROCHE E., BOUGEROL C., LEYMARIE J., MEDARD F., MONIER G., REVERET F., CASTELLUCI D., DUBROVSKII V., GIL E., TRASSOUDAINE A.
Hydride Vapor Phase Epitaxy of binary and ternary III-Nitride nanowires
Nanowire week conference 2018, Hamilton, Canada
2018


2017
ACTI
ANDRE Y., DONG Z., ROCHE E., AVIT G., DUBROVSKII V., BOUGEROL C., VARENNE C., AUDONNET F., FONTANILLE P., LEYMARIE J., M&EACUTE;DARD F., MONIER G., REVERET F., CASTELLUCI D., TRASSOUDAINE A., GIL E.
Hydride Vapor Phase Epitaxy (HVPE) growth of III-V and III-Nitrides nanowires on silicon
Energy Materials Nanotechnology EMN Epitaxy
2017 11


AFF
AVIT G., ROCHE E., ZEGHOUANE M., ANDRE Y., GIL E., TRASSOUDAINE A., LEYMARIE J., MEDARD F.
Defect-free InGaN nanowires on silicon whatever the indium composition
12th International Conference on Nitride Semiconductors, Strasbourg
2017


ZEGHOUANE M., ANDRE Y., AVIT G., CASTELLUCI C., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2017, Lille
2017


JAMADI O., REVERET F., DISSEIX P., MEDARD F., MIHAILOVIC M., LAFOSSE X., BOUCHOULE S., SEMOND F., ZUNIGA-PEREZ J., LEYMARIE J.
Low threshold lasing in bulk GaN microcavity up to 400 K
18th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN)
2017


2016
ACL
REVERET F., BIGNET L., ZHIGANG W., LAFOSSE X., PATRIARCHE G., DISSEIX P., MEDARD F., MIHAILOVIC M., LEYMARIE J., ZUNIGA-PEREZ J., BOUCHOULE S.
High reflectance dielectric distributed bragg reflectors for near ultra-violet planar microcavities: sio2/hfo2versus sio2/sinx
journal of applied physics, vol. 120, p. 093107
2016


ZUNIGA-PEREZ J., KAPPEI L., DEPARIS C., REVERET F., GRUNDMANN M., DE PRADO E., JAMADI O., LEYMARIE J., CHENOT S., LEROUX M.
Homoepitaxial nonpolar (10-10) zno/znmgo monolithic microcavities: towards reduced photonic disorder
applied physics letters, vol. 108, p. 251904
2016


JAMADI O., REVERET F., MALLET E., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., LAFOSSE X., BOUCHOULE S., LI F., LEROUX M., SEMOND F., ZUNIGA-PEREZ J.
Polariton condensation phase diagram in wide-band-gap planar microcavities: gan versus zno
physical review b, vol. 93, p. 115205
2016


INV
LEYMARIE J., JAMADI O., REVERET F., MALLET E., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., BOUCHOULE S., X L., LI F., LEROUX M., SEMOND F., ZUNIGA-PEREZ J.
Comparison of polariton condensation phase diagrams in GaN and ZnO planar microcavities
15èmes Journées de la Matière Condensée (JMC15), Bordeaux 22-26 août 2016, Société Française de Physique.
2016


AFF
ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., GIL E., LEYMARIE J., MEDARD F., REVERET F., .
Controlled Composition in Indium-rich InxGa1-xN nanowires grown by Hydride Vapor Phase Epitaxy
IWN International Workshop on Nitride Semiconductors, Orlando, Floride
2016


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2016, Montpellier
2016


2015
ACL
LI X., SUNDARAM S., DISSEIX P., LE GAC G., BOUCHOULE S., PATRIARCHE G., REVERET F., LEYMARIE J., EL GMILI Y., MOUDAKIR T., GENTY F., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
Algan-based mqws grown on a thick relaxed algan buffer on aln templates emitting at 285 nm
optical materials express, vol. 5, p. 380
2015


LI X., SUNDARAM S., EL GMILI Y., GENTY F., BOUCHOULE S., PATRIACHE G., DISSEIX P., REVERET F., LEYMARIE J., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
Movpe grown periodic aln/baln heterostructure with high boron content
journal of crystal growth, vol. 414, p. 119
2015


REVERET F., ANDRE Y., GOURMALA O., LEYMARIE J., MIHAILOVIC M., LAGARDE D., GIL E., CASTELLUCI D., TRASSOUDAINE A.
Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy
Journal of Crystal Growth, vol. 421, p. 27--32
2015


LI X., LE GAC G., BOUCHOULE S., EL GMILI Y., PATRIARCHE G., SUNDARAM S., DISSEIX P., REVERET F., LEYMARIE J., STREQUE J., GENTY F., SALVESTRINI J., DUPUIS R., LI X., VOSS P., OUGAZZADEN A.
Structural and optical investigations of algan mqws grown on a relaxed algan buffer on aln templates for emission at 280 nm
journal of crystal growth, vol. 432, p. 37
2015


COM
LE GAC G., LI X., SUNDARAM S., EL GMILI Y., MOUDAKIR T., DISSEIX P., REVERET F., LAGARDE D., LEYMARIE J., BOUCHOULE S., PATRIARCHE G., GENTY F., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
Algan-based mqws emitting at 280nm for vertical cavity surface emitting lasers
Optics infobase conference papers
2015


AFF
ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., BOUGEROL C., DUBROVSKI V., DUSSAIGNE A., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2015, Grenoble
2015


2014
ACL
MALLET E., REVERET F., DISSEIX P., SHUBINA T., LEYMARIE J.
Influence of excitonic oscillator strengths on the optical properties of gan and zno
physical review b - condensed matter and materials physics, vol. 90, p. 045204
2014


ZUNIGA-PEREZ J., MALLET E., HAHE R., RASHID M., BOUCHOULE S., BRIMONT C., DISSEIX P., DUBOZ J., GOMME G., GUILLET T., JAMADI O., LAFOSSE X., LEROUX M., LEYMARIE J., LI F., REVERET F., SEMOND F.
Patterned silicon substrates: a common platform for room temperature gan and zno polariton lasers
applied physics letters, vol. 104, p. 241113
2014


LANTY G., JEMLI K., WEI Y., LEYMARIE J., EVEN J., LAURET J., DELEPORTE E.
Room-temperature optical tunability and inhomogeneous broadening in 2d-layered organic-inorganic perovskite pseudobinary alloys
journal of physical chemistry letters, vol. 5, p. 3958
2014


AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
Nano Letters, vol. 14, p. 559--562
2014


ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure
SPIE
2014


COM
RAMDANI R., TRASSOUDAINE A., AVIT G., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., CASTELLUCI D.
Fast Growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy
IWNS International Workshop on Nitride Semiconductors, Wroclaw Pologne
2014


2013
ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride vpe: the unexpected process for the fast growth of gaas and gan nanowires with record aspect ratio and polytypism-free crystalline structure
micro/nano materials, devices, and systems
2013


1999
ACL
ROBERT C., GIL E., CADORET R., CASTELLUCI D., LEYMARIE J., VASSON A., VASSON A., BIDEUX L., GRUZZA B.
Epitaxial growth of inasxp1-x/inp quantum wells by hvpe
applied surface science, vol. 142, p. 637--641
1999


1994
PIFFAULT N., GIL E., LEYMARIE J., MONIER C., CLARK S., ANDERSON M., CADORET R., VASSON A., VASSON A.
Epitaxial-growth and kinetic-study of mismatched (ga,in)as/inp layers grown by hydride vapor-phase epitaxy
journal of crystal growth, vol. 135, p. 11--22
1994


1993
DISSEIX P., LEYMARIE J., VASSON A., VASSON A., BANVILLET H., GIL E., PIFFAULT N., CADORET R.
Photoluminescence studies in strained inas/inp quantum-wells grown by hydride vapor-phase epitaxy
semiconductor science and technology, vol. 8, p. 1666--1670
1993


1991
GIL E., BANVILLET H., PIFFAULT N., CADORET R., FERDJANI K., LEYMARIE J., VASSON A., VASSON A., TABATA A., BENYATTOU T., GUILLOT G.
Inas/inp strained quantum wells growth by hydride vapor phase epitaxy and photoluminescence studies
journal of electrochemical society, vol. 138, p. 238--248
1991




<== retour à l'annuaire

Membres - M3G

Leymarie Joël


Photo
Fonction : Permanent (UCA)
Lieu d'exercice : EUPI Bat. 3/4/L
Equipe : N2-Spectro. Opt. (PHOTON)
Section CNU : 28
Téléphone : +33473407026


Publications associées :
44 publications trouvées


2022
ACL
MEHDI H., REVERET F., ROBERT-GOUMET C., BIDEUX L., GRUZZA B., HOGGAN P., LEYMARIE J., ANDRE Y., GIL E., PELISSIER B., LEVERT T., PAGET D., MONIER G.
Investigation of n2 plasma gaas surface passivation efficiency against air exposure: towards an enhanced diode
applied surface science, vol. 579, p. 152191
2022 apr


2021
HIJAZI H., PAGET D., MONIER G., GR&EACUTE;GOIRE G., LEYMARIE J., GIL E., CADIZ F., ROBERT-GOUMET C., ANDR&EACUTE; Y.
Charge and spin transport over record distances in GaAs metallic n -type nanowires
Physical Review B, vol. 103, p. 195314
2021 may


2020
ZEGHOUANE M., AVIT G., ANDRE Y., TALIERCIO T., FERRET P., GIL E., CASTELLUCI D., DISSEIX P., LEYMARIE J., TOURNIE E., TRASSOUDAINE A.
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy
crystal growth \& design, vol. 20, p. 2232
2020


ANDRE Y., ISIK GOKTAS N., MONIER G., HIJAZI H., MEHDI H., BOUGEROL C., BIDEUX L., TRASSOUDAINE A., PAGET D., LEYMARIE J., GIL E., ROBERT-GOUMET C., LAPIERRE R.
Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
Nano Express, vol. 1, p. 020019
2020 sep 04


2019
JAMADI O., REVERET F., SOLNYSHKOV D., DISSEIX P., LEYMARIE J., MALLET-DIDA L., BRIMONT C., GUILLET T., LAFOSSE X., BOUCHOULE S., SEMOND F., LEROUX M., ZUNIGA-PEREZ J., MALPUECH G.
Competition between horizontal and vertical polariton lasing in planar microcavities
physical review b, vol. 99, p. 085304
2019


MEHDI H., REVERET F., BOUGEROL C., ROBERT-GOUMET C., HOGGAN P., BIDEUX L., GRUZZA B., LEYMARIE J., MONIER G.
Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process
Applied Surface Science, vol. 495, p. 143586
2019


INV
REVERET F., JAMADI O., KREYDER G., DISSEIX P., MEDARD F., LEYMARIE J., MIHAILOVIC M., MOREAU A., SOLNYSHKOV D., DEPARIS C., LEROUX M., CAMBRIL E., BOUCHOULE S., GUILLET T., BRIMONT C., ZUNIGA-PEREZ J., MALPUECH G.
Polariton lasing in planar microcavities and waveguides up to room temperature
10th Russian-French Workshop on Nanosciences and Nanotechnologies
2019


AFF
ROBERT GOUMET C., MONIER G., MEHDI H., HOGGAN P., BIDEUX L., REVERET F., LEYMARIE J., MAHJOUB A., PELISSIER B.
Toward optimum N2 plasma nitriding process for GaAs(100) surface passivation
Journées Surfaces et Interfaces - JSI Nancy, Janvier 2019
2019


2018
ACL
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., REVERET F., GIL E., MEDARD F., LEYMARIE J., JEAN T., DUBROVSKII V., TRASSOUDAINE A.
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red
Nanotechnology, vol. 29, p. 465602
2018


JAMADI O., REVERET F., DISSEIX P., MEDARD F., LEYMARIE J., MOREAU A., SOLNYSHKOV D., DEPARIS C., LEROUX M., CAMBRIL E., BOUCHOULE S., ZUNIGA-PEREZ J., MALPUECH G.
Edge-emitting polariton laser and amplifier based on a ZnO waveguide
Light: Science & Applications, vol. 7, p. 84
2018


COM
JAMADI O., DEPARIS C., REVERET F., BOUCHOULE S., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., LEROUX M., ZUNIGA-PEREZ J.
Monolithic ZnO optical microcavities : from materials science to room-temperature polariton laser
SPIE Photonics West
2018


ZUNIGA-PEREZ J., JAMADI AND  CATHERINE DEPARIS O., REVERET F., LAFOSSE X., BOUCHOULE AND  MATHIEU LEROUX S., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J.
Room-temperature edge-emitting ZnO polariton lasers based on monolithic waweguides
19th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN)
2018


AVIT G., ZEGHOUANE M., ANDRE Y., BOUGEROL C., GIL E., CASTELLUCI D., FERRET P., ROCHE E., LEYMARIE J., MEDARD F., DUBROVSKI V., TRASSOUDAINE A.
Self-induced growth of InN nanowires and selective area growth of In(Ga)N nanowires with a controlled mole fraction by HVPE
ISGN 7th International Symposium on Growth of III-Nitrides, Varsovie, Pologne
2018


ZUNIGA-PEREZ J., JAMADI O., DEPARIS C., REVERET F., LAFOSSE X., BOUCHOULE S., LEROUX M., DISSEIX AND  FRANCOIS MEDARD P., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J.
ZnO monolithic waveguides : edge-emitting polariton lasers and amplifiers based on propagating polaritons
Photonic, Quantum, and Nonlinear Optics Workshop
2018


AFF
ANDRE Y., ZEGHOUANE M., AVIT G., ROCHE E., BOUGEROL C., LEYMARIE J., MEDARD F., MONIER G., REVERET F., CASTELLUCI D., DUBROVSKII V., GIL E., TRASSOUDAINE A.
Hydride Vapor Phase Epitaxy of binary and ternary III-Nitride nanowires
Nanowire week conference 2018, Hamilton, Canada
2018


2017
ACTI
ANDRE Y., DONG Z., ROCHE E., AVIT G., DUBROVSKII V., BOUGEROL C., VARENNE C., AUDONNET F., FONTANILLE P., LEYMARIE J., M&EACUTE;DARD F., MONIER G., REVERET F., CASTELLUCI D., TRASSOUDAINE A., GIL E.
Hydride Vapor Phase Epitaxy (HVPE) growth of III-V and III-Nitrides nanowires on silicon
Energy Materials Nanotechnology EMN Epitaxy
2017 11


AFF
AVIT G., ROCHE E., ZEGHOUANE M., ANDRE Y., GIL E., TRASSOUDAINE A., LEYMARIE J., MEDARD F.
Defect-free InGaN nanowires on silicon whatever the indium composition
12th International Conference on Nitride Semiconductors, Strasbourg
2017


ZEGHOUANE M., ANDRE Y., AVIT G., CASTELLUCI C., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2017, Lille
2017


JAMADI O., REVERET F., DISSEIX P., MEDARD F., MIHAILOVIC M., LAFOSSE X., BOUCHOULE S., SEMOND F., ZUNIGA-PEREZ J., LEYMARIE J.
Low threshold lasing in bulk GaN microcavity up to 400 K
18th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN)
2017


2016
ACL
REVERET F., BIGNET L., ZHIGANG W., LAFOSSE X., PATRIARCHE G., DISSEIX P., MEDARD F., MIHAILOVIC M., LEYMARIE J., ZUNIGA-PEREZ J., BOUCHOULE S.
High reflectance dielectric distributed bragg reflectors for near ultra-violet planar microcavities: sio2/hfo2versus sio2/sinx
journal of applied physics, vol. 120, p. 093107
2016


ZUNIGA-PEREZ J., KAPPEI L., DEPARIS C., REVERET F., GRUNDMANN M., DE PRADO E., JAMADI O., LEYMARIE J., CHENOT S., LEROUX M.
Homoepitaxial nonpolar (10-10) zno/znmgo monolithic microcavities: towards reduced photonic disorder
applied physics letters, vol. 108, p. 251904
2016


JAMADI O., REVERET F., MALLET E., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., LAFOSSE X., BOUCHOULE S., LI F., LEROUX M., SEMOND F., ZUNIGA-PEREZ J.
Polariton condensation phase diagram in wide-band-gap planar microcavities: gan versus zno
physical review b, vol. 93, p. 115205
2016


INV
LEYMARIE J., JAMADI O., REVERET F., MALLET E., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., BOUCHOULE S., X L., LI F., LEROUX M., SEMOND F., ZUNIGA-PEREZ J.
Comparison of polariton condensation phase diagrams in GaN and ZnO planar microcavities
15èmes Journées de la Matière Condensée (JMC15), Bordeaux 22-26 août 2016, Société Française de Physique.
2016


AFF
ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., GIL E., LEYMARIE J., MEDARD F., REVERET F., .
Controlled Composition in Indium-rich InxGa1-xN nanowires grown by Hydride Vapor Phase Epitaxy
IWN International Workshop on Nitride Semiconductors, Orlando, Floride
2016


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2016, Montpellier
2016


2015
ACL
LI X., SUNDARAM S., DISSEIX P., LE GAC G., BOUCHOULE S., PATRIARCHE G., REVERET F., LEYMARIE J., EL GMILI Y., MOUDAKIR T., GENTY F., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
Algan-based mqws grown on a thick relaxed algan buffer on aln templates emitting at 285 nm
optical materials express, vol. 5, p. 380
2015


LI X., SUNDARAM S., EL GMILI Y., GENTY F., BOUCHOULE S., PATRIACHE G., DISSEIX P., REVERET F., LEYMARIE J., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
Movpe grown periodic aln/baln heterostructure with high boron content
journal of crystal growth, vol. 414, p. 119
2015


REVERET F., ANDRE Y., GOURMALA O., LEYMARIE J., MIHAILOVIC M., LAGARDE D., GIL E., CASTELLUCI D., TRASSOUDAINE A.
Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy
Journal of Crystal Growth, vol. 421, p. 27--32
2015


LI X., LE GAC G., BOUCHOULE S., EL GMILI Y., PATRIARCHE G., SUNDARAM S., DISSEIX P., REVERET F., LEYMARIE J., STREQUE J., GENTY F., SALVESTRINI J., DUPUIS R., LI X., VOSS P., OUGAZZADEN A.
Structural and optical investigations of algan mqws grown on a relaxed algan buffer on aln templates for emission at 280 nm
journal of crystal growth, vol. 432, p. 37
2015


COM
LE GAC G., LI X., SUNDARAM S., EL GMILI Y., MOUDAKIR T., DISSEIX P., REVERET F., LAGARDE D., LEYMARIE J., BOUCHOULE S., PATRIARCHE G., GENTY F., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
Algan-based mqws emitting at 280nm for vertical cavity surface emitting lasers
Optics infobase conference papers
2015


AFF
ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., BOUGEROL C., DUBROVSKI V., DUSSAIGNE A., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2015, Grenoble
2015


2014
ACL
MALLET E., REVERET F., DISSEIX P., SHUBINA T., LEYMARIE J.
Influence of excitonic oscillator strengths on the optical properties of gan and zno
physical review b - condensed matter and materials physics, vol. 90, p. 045204
2014


ZUNIGA-PEREZ J., MALLET E., HAHE R., RASHID M., BOUCHOULE S., BRIMONT C., DISSEIX P., DUBOZ J., GOMME G., GUILLET T., JAMADI O., LAFOSSE X., LEROUX M., LEYMARIE J., LI F., REVERET F., SEMOND F.
Patterned silicon substrates: a common platform for room temperature gan and zno polariton lasers
applied physics letters, vol. 104, p. 241113
2014


LANTY G., JEMLI K., WEI Y., LEYMARIE J., EVEN J., LAURET J., DELEPORTE E.
Room-temperature optical tunability and inhomogeneous broadening in 2d-layered organic-inorganic perovskite pseudobinary alloys
journal of physical chemistry letters, vol. 5, p. 3958
2014


AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
Nano Letters, vol. 14, p. 559--562
2014


ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure
SPIE
2014


COM
RAMDANI R., TRASSOUDAINE A., AVIT G., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., CASTELLUCI D.
Fast Growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy
IWNS International Workshop on Nitride Semiconductors, Wroclaw Pologne
2014


2013
ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride vpe: the unexpected process for the fast growth of gaas and gan nanowires with record aspect ratio and polytypism-free crystalline structure
micro/nano materials, devices, and systems
2013


1999
ACL
ROBERT C., GIL E., CADORET R., CASTELLUCI D., LEYMARIE J., VASSON A., VASSON A., BIDEUX L., GRUZZA B.
Epitaxial growth of inasxp1-x/inp quantum wells by hvpe
applied surface science, vol. 142, p. 637--641
1999


1994
PIFFAULT N., GIL E., LEYMARIE J., MONIER C., CLARK S., ANDERSON M., CADORET R., VASSON A., VASSON A.
Epitaxial-growth and kinetic-study of mismatched (ga,in)as/inp layers grown by hydride vapor-phase epitaxy
journal of crystal growth, vol. 135, p. 11--22
1994


1993
DISSEIX P., LEYMARIE J., VASSON A., VASSON A., BANVILLET H., GIL E., PIFFAULT N., CADORET R.
Photoluminescence studies in strained inas/inp quantum-wells grown by hydride vapor-phase epitaxy
semiconductor science and technology, vol. 8, p. 1666--1670
1993


1991
GIL E., BANVILLET H., PIFFAULT N., CADORET R., FERDJANI K., LEYMARIE J., VASSON A., VASSON A., TABATA A., BENYATTOU T., GUILLOT G.
Inas/inp strained quantum wells growth by hydride vapor phase epitaxy and photoluminescence studies
journal of electrochemical society, vol. 138, p. 238--248
1991




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Membres - GePEB

Leymarie Joël


Photo
Fonction : Permanent (UCA)
Lieu d'exercice : EUPI Bat. 3/4/L
Equipe : N2-Spectro. Opt. (PHOTON)
Section CNU : 28
Téléphone : +33473407026


Publications associées :
44 publications trouvées


2022
ACL
MEHDI H., REVERET F., ROBERT-GOUMET C., BIDEUX L., GRUZZA B., HOGGAN P., LEYMARIE J., ANDRE Y., GIL E., PELISSIER B., LEVERT T., PAGET D., MONIER G.
Investigation of n2 plasma gaas surface passivation efficiency against air exposure: towards an enhanced diode
applied surface science, vol. 579, p. 152191
2022 apr


2021
HIJAZI H., PAGET D., MONIER G., GR&EACUTE;GOIRE G., LEYMARIE J., GIL E., CADIZ F., ROBERT-GOUMET C., ANDR&EACUTE; Y.
Charge and spin transport over record distances in GaAs metallic n -type nanowires
Physical Review B, vol. 103, p. 195314
2021 may


2020
ZEGHOUANE M., AVIT G., ANDRE Y., TALIERCIO T., FERRET P., GIL E., CASTELLUCI D., DISSEIX P., LEYMARIE J., TOURNIE E., TRASSOUDAINE A.
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy
crystal growth \& design, vol. 20, p. 2232
2020


ANDRE Y., ISIK GOKTAS N., MONIER G., HIJAZI H., MEHDI H., BOUGEROL C., BIDEUX L., TRASSOUDAINE A., PAGET D., LEYMARIE J., GIL E., ROBERT-GOUMET C., LAPIERRE R.
Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
Nano Express, vol. 1, p. 020019
2020 sep 04


2019
JAMADI O., REVERET F., SOLNYSHKOV D., DISSEIX P., LEYMARIE J., MALLET-DIDA L., BRIMONT C., GUILLET T., LAFOSSE X., BOUCHOULE S., SEMOND F., LEROUX M., ZUNIGA-PEREZ J., MALPUECH G.
Competition between horizontal and vertical polariton lasing in planar microcavities
physical review b, vol. 99, p. 085304
2019


MEHDI H., REVERET F., BOUGEROL C., ROBERT-GOUMET C., HOGGAN P., BIDEUX L., GRUZZA B., LEYMARIE J., MONIER G.
Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process
Applied Surface Science, vol. 495, p. 143586
2019


INV
REVERET F., JAMADI O., KREYDER G., DISSEIX P., MEDARD F., LEYMARIE J., MIHAILOVIC M., MOREAU A., SOLNYSHKOV D., DEPARIS C., LEROUX M., CAMBRIL E., BOUCHOULE S., GUILLET T., BRIMONT C., ZUNIGA-PEREZ J., MALPUECH G.
Polariton lasing in planar microcavities and waveguides up to room temperature
10th Russian-French Workshop on Nanosciences and Nanotechnologies
2019


AFF
ROBERT GOUMET C., MONIER G., MEHDI H., HOGGAN P., BIDEUX L., REVERET F., LEYMARIE J., MAHJOUB A., PELISSIER B.
Toward optimum N2 plasma nitriding process for GaAs(100) surface passivation
Journées Surfaces et Interfaces - JSI Nancy, Janvier 2019
2019


2018
ACL
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., REVERET F., GIL E., MEDARD F., LEYMARIE J., JEAN T., DUBROVSKII V., TRASSOUDAINE A.
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red
Nanotechnology, vol. 29, p. 465602
2018


JAMADI O., REVERET F., DISSEIX P., MEDARD F., LEYMARIE J., MOREAU A., SOLNYSHKOV D., DEPARIS C., LEROUX M., CAMBRIL E., BOUCHOULE S., ZUNIGA-PEREZ J., MALPUECH G.
Edge-emitting polariton laser and amplifier based on a ZnO waveguide
Light: Science & Applications, vol. 7, p. 84
2018


COM
JAMADI O., DEPARIS C., REVERET F., BOUCHOULE S., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., LEROUX M., ZUNIGA-PEREZ J.
Monolithic ZnO optical microcavities : from materials science to room-temperature polariton laser
SPIE Photonics West
2018


ZUNIGA-PEREZ J., JAMADI AND  CATHERINE DEPARIS O., REVERET F., LAFOSSE X., BOUCHOULE AND  MATHIEU LEROUX S., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J.
Room-temperature edge-emitting ZnO polariton lasers based on monolithic waweguides
19th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN)
2018


AVIT G., ZEGHOUANE M., ANDRE Y., BOUGEROL C., GIL E., CASTELLUCI D., FERRET P., ROCHE E., LEYMARIE J., MEDARD F., DUBROVSKI V., TRASSOUDAINE A.
Self-induced growth of InN nanowires and selective area growth of In(Ga)N nanowires with a controlled mole fraction by HVPE
ISGN 7th International Symposium on Growth of III-Nitrides, Varsovie, Pologne
2018


ZUNIGA-PEREZ J., JAMADI O., DEPARIS C., REVERET F., LAFOSSE X., BOUCHOULE S., LEROUX M., DISSEIX AND  FRANCOIS MEDARD P., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J.
ZnO monolithic waveguides : edge-emitting polariton lasers and amplifiers based on propagating polaritons
Photonic, Quantum, and Nonlinear Optics Workshop
2018


AFF
ANDRE Y., ZEGHOUANE M., AVIT G., ROCHE E., BOUGEROL C., LEYMARIE J., MEDARD F., MONIER G., REVERET F., CASTELLUCI D., DUBROVSKII V., GIL E., TRASSOUDAINE A.
Hydride Vapor Phase Epitaxy of binary and ternary III-Nitride nanowires
Nanowire week conference 2018, Hamilton, Canada
2018


2017
ACTI
ANDRE Y., DONG Z., ROCHE E., AVIT G., DUBROVSKII V., BOUGEROL C., VARENNE C., AUDONNET F., FONTANILLE P., LEYMARIE J., M&EACUTE;DARD F., MONIER G., REVERET F., CASTELLUCI D., TRASSOUDAINE A., GIL E.
Hydride Vapor Phase Epitaxy (HVPE) growth of III-V and III-Nitrides nanowires on silicon
Energy Materials Nanotechnology EMN Epitaxy
2017 11


AFF
AVIT G., ROCHE E., ZEGHOUANE M., ANDRE Y., GIL E., TRASSOUDAINE A., LEYMARIE J., MEDARD F.
Defect-free InGaN nanowires on silicon whatever the indium composition
12th International Conference on Nitride Semiconductors, Strasbourg
2017


ZEGHOUANE M., ANDRE Y., AVIT G., CASTELLUCI C., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2017, Lille
2017


JAMADI O., REVERET F., DISSEIX P., MEDARD F., MIHAILOVIC M., LAFOSSE X., BOUCHOULE S., SEMOND F., ZUNIGA-PEREZ J., LEYMARIE J.
Low threshold lasing in bulk GaN microcavity up to 400 K
18th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN)
2017


2016
ACL
REVERET F., BIGNET L., ZHIGANG W., LAFOSSE X., PATRIARCHE G., DISSEIX P., MEDARD F., MIHAILOVIC M., LEYMARIE J., ZUNIGA-PEREZ J., BOUCHOULE S.
High reflectance dielectric distributed bragg reflectors for near ultra-violet planar microcavities: sio2/hfo2versus sio2/sinx
journal of applied physics, vol. 120, p. 093107
2016


ZUNIGA-PEREZ J., KAPPEI L., DEPARIS C., REVERET F., GRUNDMANN M., DE PRADO E., JAMADI O., LEYMARIE J., CHENOT S., LEROUX M.
Homoepitaxial nonpolar (10-10) zno/znmgo monolithic microcavities: towards reduced photonic disorder
applied physics letters, vol. 108, p. 251904
2016


JAMADI O., REVERET F., MALLET E., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., LAFOSSE X., BOUCHOULE S., LI F., LEROUX M., SEMOND F., ZUNIGA-PEREZ J.
Polariton condensation phase diagram in wide-band-gap planar microcavities: gan versus zno
physical review b, vol. 93, p. 115205
2016


INV
LEYMARIE J., JAMADI O., REVERET F., MALLET E., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., BOUCHOULE S., X L., LI F., LEROUX M., SEMOND F., ZUNIGA-PEREZ J.
Comparison of polariton condensation phase diagrams in GaN and ZnO planar microcavities
15èmes Journées de la Matière Condensée (JMC15), Bordeaux 22-26 août 2016, Société Française de Physique.
2016


AFF
ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., GIL E., LEYMARIE J., MEDARD F., REVERET F., .
Controlled Composition in Indium-rich InxGa1-xN nanowires grown by Hydride Vapor Phase Epitaxy
IWN International Workshop on Nitride Semiconductors, Orlando, Floride
2016


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2016, Montpellier
2016


2015
ACL
LI X., SUNDARAM S., DISSEIX P., LE GAC G., BOUCHOULE S., PATRIARCHE G., REVERET F., LEYMARIE J., EL GMILI Y., MOUDAKIR T., GENTY F., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
Algan-based mqws grown on a thick relaxed algan buffer on aln templates emitting at 285 nm
optical materials express, vol. 5, p. 380
2015


LI X., SUNDARAM S., EL GMILI Y., GENTY F., BOUCHOULE S., PATRIACHE G., DISSEIX P., REVERET F., LEYMARIE J., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
Movpe grown periodic aln/baln heterostructure with high boron content
journal of crystal growth, vol. 414, p. 119
2015


REVERET F., ANDRE Y., GOURMALA O., LEYMARIE J., MIHAILOVIC M., LAGARDE D., GIL E., CASTELLUCI D., TRASSOUDAINE A.
Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy
Journal of Crystal Growth, vol. 421, p. 27--32
2015


LI X., LE GAC G., BOUCHOULE S., EL GMILI Y., PATRIARCHE G., SUNDARAM S., DISSEIX P., REVERET F., LEYMARIE J., STREQUE J., GENTY F., SALVESTRINI J., DUPUIS R., LI X., VOSS P., OUGAZZADEN A.
Structural and optical investigations of algan mqws grown on a relaxed algan buffer on aln templates for emission at 280 nm
journal of crystal growth, vol. 432, p. 37
2015


COM
LE GAC G., LI X., SUNDARAM S., EL GMILI Y., MOUDAKIR T., DISSEIX P., REVERET F., LAGARDE D., LEYMARIE J., BOUCHOULE S., PATRIARCHE G., GENTY F., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
Algan-based mqws emitting at 280nm for vertical cavity surface emitting lasers
Optics infobase conference papers
2015


AFF
ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., BOUGEROL C., DUBROVSKI V., DUSSAIGNE A., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2015, Grenoble
2015


2014
ACL
MALLET E., REVERET F., DISSEIX P., SHUBINA T., LEYMARIE J.
Influence of excitonic oscillator strengths on the optical properties of gan and zno
physical review b - condensed matter and materials physics, vol. 90, p. 045204
2014


ZUNIGA-PEREZ J., MALLET E., HAHE R., RASHID M., BOUCHOULE S., BRIMONT C., DISSEIX P., DUBOZ J., GOMME G., GUILLET T., JAMADI O., LAFOSSE X., LEROUX M., LEYMARIE J., LI F., REVERET F., SEMOND F.
Patterned silicon substrates: a common platform for room temperature gan and zno polariton lasers
applied physics letters, vol. 104, p. 241113
2014


LANTY G., JEMLI K., WEI Y., LEYMARIE J., EVEN J., LAURET J., DELEPORTE E.
Room-temperature optical tunability and inhomogeneous broadening in 2d-layered organic-inorganic perovskite pseudobinary alloys
journal of physical chemistry letters, vol. 5, p. 3958
2014


AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
Nano Letters, vol. 14, p. 559--562
2014


ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure
SPIE
2014


COM
RAMDANI R., TRASSOUDAINE A., AVIT G., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., CASTELLUCI D.
Fast Growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy
IWNS International Workshop on Nitride Semiconductors, Wroclaw Pologne
2014


2013
ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride vpe: the unexpected process for the fast growth of gaas and gan nanowires with record aspect ratio and polytypism-free crystalline structure
micro/nano materials, devices, and systems
2013


1999
ACL
ROBERT C., GIL E., CADORET R., CASTELLUCI D., LEYMARIE J., VASSON A., VASSON A., BIDEUX L., GRUZZA B.
Epitaxial growth of inasxp1-x/inp quantum wells by hvpe
applied surface science, vol. 142, p. 637--641
1999


1994
PIFFAULT N., GIL E., LEYMARIE J., MONIER C., CLARK S., ANDERSON M., CADORET R., VASSON A., VASSON A.
Epitaxial-growth and kinetic-study of mismatched (ga,in)as/inp layers grown by hydride vapor-phase epitaxy
journal of crystal growth, vol. 135, p. 11--22
1994


1993
DISSEIX P., LEYMARIE J., VASSON A., VASSON A., BANVILLET H., GIL E., PIFFAULT N., CADORET R.
Photoluminescence studies in strained inas/inp quantum-wells grown by hydride vapor-phase epitaxy
semiconductor science and technology, vol. 8, p. 1666--1670
1993


1991
GIL E., BANVILLET H., PIFFAULT N., CADORET R., FERDJANI K., LEYMARIE J., VASSON A., VASSON A., TABATA A., BENYATTOU T., GUILLOT G.
Inas/inp strained quantum wells growth by hydride vapor phase epitaxy and photoluminescence studies
journal of electrochemical society, vol. 138, p. 238--248
1991




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