ZEGHOUANE M., ANDRE Y., AVIT G., JRIDI J., BOUGEROL C., COULON P., FERRET P., CASTELLUCI D., GIL E., SHIELDS P., DUBROVSKII V., TRASSOUDAINE A.
Formation of voids in selective area growth of InN nanorods in SiN x on GaN templates
Nano Futures, vol. 4, p. 025002
2020 may 29


ZEGHOUANE M., AVIT G., ANDRE Y., TALIERCIO T., FERRET P., GIL E., CASTELLUCI D., DISSEIX P., LEYMARIE J., TOURNIE E., TRASSOUDAINE A.
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy
crystal growth \& design, vol. 20, p. 2232
2020


ZEGHOUANE M., AVIT G., CORNELIUS T., SALOMON D., ANDRE Y., BOUGEROL C., TALIERCIO T., MEGUEKAM-SADO A., FERRET P., CASTELLUCI D., GIL E., TOURNIE E., THOMAS T., TRASSOUDAINE A.
Selective growth of ordered hexagonal InN nanorods
CrystEngComm, vol. 21, p. 2702
2019 apr 15


ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., TOUNIE E., TALERCIO T., MEGUEKAM A., ROBIN Y., DUBROVSKII V., AMANO H., TRASSOUDAINE A.
Position and composition controlled high quality (In, Ga)N nanowires grown by HVPE
13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
2019


JRIDI J., ZEGHOUNE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., ROBIN Y., DUBROVSKII V., AMANO H., TRASSOUDAINE A.
Self-induced InGaN nanowires with a controlled InN mole fraction by HVPE
13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
2019


ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., REVERET F., GIL E., MEDARD F., LEYMARIE J., JEAN T., DUBROVSKII V., TRASSOUDAINE A.
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red
Nanotechnology, vol. 29, p. 465602
2018


ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., ROBIN Y., FERRET P., CASTELLUCI D., GIL E., DUBROVSKII V., HIROSHI A., TRASSOUDAINE A.
Compositional control of homogeneous InGaN nanowires with the In content up to 90%.
Nanotechnology, vol. 30, p. 044001
2018


AVIT G., ZEGHOUANE M., ANDRE Y., CASTELLUCI D., GIL E., SI-YOUNG B., AMANO H., TRASSOUDAINE A.
Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE.
Crystal Engineering Communication, vol. 20, p. 6207--6213
2018


HIJAZI H., DUBROVSKII V., MONIER G., GIL E., LEROUX C., AVIT G., TRASSOUDAINE A., BOUGEROL C., CASTELLUCI D., ROBERT GOUMET C., ANDRE Y.
Influence of silicon on the nucleation rate of GaAs nanowires on silicon substrates
The Journal of Physical Chemistry, vol. 122, p. 19230--19235
2018


ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., TRASSOUDAINE A.
Growth of (In,Ga)N nanowires with a controlled indium mole fraction by HVPE
4,5- 7th NANOSEA International Conference NANO-structures and nanomaterials SElf-Assembly, Carqueiranne (NanoSEA), France
2018


ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., TOURNIE E., TALERCIO T., MEGUEKAM A., ROBIN Y., DUBROVSKI V., AMANO H., TRASSOUDAINE A.
Self-induced and selective area growth of (In,Ga)N nanowires
IWN International workshop on Nitride Semiconductors, Kanazawa, Japan
2018


AVIT G., ZEGHOUANE M., ANDRE Y., BOUGEROL C., GIL E., CASTELLUCI D., FERRET P., ROCHE E., LEYMARIE J., MEDARD F., DUBROVSKI V., TRASSOUDAINE A.
Self-induced growth of InN nanowires and selective area growth of In(Ga)N nanowires with a controlled mole fraction by HVPE
ISGN 7th International Symposium on Growth of III-Nitrides, Varsovie, Pologne
2018


HIJAZI H., AVIT G., PAGET D., MONIER G., GIL E., DONG Z., MONIER G., ROBERT-GOUMET C., CASTELLUCI D., TRASSOUDAINE A., LEROUX C., DUBROVSKI V., ANDRE Y.
Charge and spin diffusion in gallium arsenide nanowires grown by HVPE
16 ème Journées Nano, Micro et Optoélectronique, JNMO, Agay
2018


ANDRE Y., ZEGHOUANE M., AVIT G., ROCHE E., BOUGEROL C., LEYMARIE J., MEDARD F., MONIER G., REVERET F., CASTELLUCI D., DUBROVSKII V., GIL E., TRASSOUDAINE A.
Hydride Vapor Phase Epitaxy of binary and ternary III-Nitride nanowires
Nanowire week conference 2018, Hamilton, Canada
2018


ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., DUBROVSKI V., TRASSOUDAINE A.
“HVPE growth of InGaN nanowires with a controlled indium mole fraction and selective area growth of well-ordered InN nano- and microwires
16 ème Journées Nano, Micro et Optoélectronique, JNMO, Agay
2018


ANDRE Y., DONG Z., ROCHE E., AVIT G., DUBROVSKII V., BOUGEROL C., VARENNE C., AUDONNET F., FONTANILLE P., LEYMARIE J., MÉDARD F., MONIER G., REVERET F., CASTELLUCI D., TRASSOUDAINE A., GIL E.
Hydride Vapor Phase Epitaxy (HVPE) growth of III-V and III-Nitrides nanowires on silicon
Energy Materials Nanotechnology EMN Epitaxy
2017 11


AMANO H., AVIT G., TRASSOUDAINE A.
Growth of III-Nitride Nanorods for Future Optoelectronics Applications.
18th International Conference on Physics of Light-Matter Coupling in Nanostructures, Neubaukirche in Würzburg, Germany, July 2017.
2017


AVIT G.
HVPE growth of III-V nanostructures for high performance devices.
8th International Conference and Exhibition on Lasers, Optics and Photonics, Las Vegas, USA, 15-17 November 2017
2017


AVIT G., ANDRE A., GIL E., TRASSOUDAINE A.
HVPE growth of III-V nanostructures for high performance devices.
8th International Conference and Exhibition on Lasers, Optics and Photonics, Las Vegas, USA, 15-17 November 2017
2017


LEKHAL K., AVIT G., SI-YOUNG B., OUSSMAN B., ROCHE E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., AMANO H.
III-Nitride based photovoltaic application on silicon: comparison between axial and core/shell nanowires devices
ICNS International Conference on Nitride Semiconductors, Strasbourg
2017


HIJAZI H., ANDRE Y., MONIER G., LEROUX C., AVIT G., CASTELLUCI D., BIDEUX L., TRASSOUDAINE A., GIL E., ROBERT-GOUMET C.
Croissance catalysée de nanofils de GaAs sur substrat de Si(111)
GDR PULSE, Atelier consacré aux techniques de caractérisations structurales, Nice
2017


AVIT G., ROCHE E., ZEGHOUANE M., ANDRE Y., GIL E., TRASSOUDAINE A., LEYMARIE J., MEDARD F.
Defect-free InGaN nanowires on silicon whatever the indium composition
12th International Conference on Nitride Semiconductors, Strasbourg
2017


ZEGHOUANE M., ROCHE E., AVIT G., ANDRE Y., TRASSOUDAINE A.
Defect-free InGaN nanowires on silicon whatever the indium composition
Defect-free InGaN nanowires on silicon whatever the indium composition
2017


ZEGHOUANE M., ANDRE Y., AVIT G., CASTELLUCI C., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2017, Lille
2017


AVIT G., ANDRE Y., BOUGEROL C., CASTELLUCI D., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., RAMDANI M., ROCHE E., TRASSOUDAINE A.
GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures
Crystal Growth and Design, vol. 16, p. 2509--2513
2016


TRASSOUDAINE A., ROCHE E., BOUGEROL C., ANDRE Y., AVIT G., MONIER G., RAMDANI M., GIL E., CASTELLUCI D., DUBROVSKII V.
Spontaneous formation of GaN/AlN core–shell nanowires on sapphire by hydride vapor phase epitaxy
Journal of Crystal Growth, vol. 454, p. 1--5
2016


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., GIL E., LEYMARIE J., MEDARD F., REVERET F., .
Controlled Composition in Indium-rich InxGa1-xN nanowires grown by Hydride Vapor Phase Epitaxy
IWN International Workshop on Nitride Semiconductors, Orlando, Floride
2016


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2016, Montpellier
2016


ROCHE E., TRASSOUDAINE A., ANDRE Y., AVIT G., GIL E., CASTELLUCI D., BOUGEROL C., DUBROVSKI V.
(Ga,In)N nanostructures and nanowires grown by HVPE”
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., BOUGEROL C., DUBROVSKI V., DUSSAIGNE A., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2015, Grenoble
2015


GIL E., DUBROVSKII V., AVIT G., ANDRE Y., LEROUX C., LEKHAL K., GRECENKOV J., TRASSOUDAINE A., CASTELLUCI D., MONIER G., RAMDANI M., ROBERT C., BIDEUX L., HARMAND J., GLAS F.
Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius
Nano Letters, vol. 14, p. 3938--3944
2014


AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
Nano Letters, vol. 14, p. 559--562
2014


ANDRE Y., LEKHAL K., HOGGAN P., AVIT G., CADIZ F., ROWE A., PAGET D., PETIT E., LEROUX C., TRASSOUDAINE A., REDA RAMDANI M., MONIER G., COLAS D., AJIB R., CASTELLUCI D., GIL E.
Vapor liquid solid-hydride vapor phase epitaxy (vls-hvpe) growth of ultra-long defect-free gaas nanowires: ab initio simulations supporting center nucleation
journal of chemical physics, vol. 140, p. 194706
2014 may


ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure
SPIE
2014


RAMDANI R., TRASSOUDAINE A., AVIT G., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., CASTELLUCI D.
Fast Growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy
IWNS International Workshop on Nitride Semiconductors, Wroclaw Pologne
2014


ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride vpe: the unexpected process for the fast growth of gaas and gan nanowires with record aspect ratio and polytypism-free crystalline structure
micro/nano materials, devices, and systems
2013


ANDRE Y., AVIT G., LEKHAL K., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., FONTANILLE P., PIERRE G., PAGET D., ROWE A., PETIT E., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications
E-MRS Spring Meeting, Starsbourg, France
2013


LEKHAL K., AVIT G., ANDRE Y., TRASSOUDAINE A., GIL E., VARENNE C., BOUGEROL C., MONIER G., CASTELLUCI D.
Catalyst-assisted hydride vapor phase epitaxy of gan nanowires: exceptional length and constant rod-like shape capability
nanotechnology, vol. 23, p. 405601
2012


LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., AVIT G., CELLIER J., CASTELLUCI D.
Exceptional crystal-defined bunched and hyperbunched gan nanorods grown by catalyst-free hvpe
crystal growth & design, vol. 12, p. 2251--2256
2012