Disseix Pierre
Fonction : | Permanent (UCA) |
Lieu d'exercice : | EUPI Bat. 3/4/L |
Equipe : | N2-Spectro. Opt. (PHOTON) |
Section CNU : | 28 |
Téléphone : | +33473407343 |
e-mail : | Cette adresse e-mail est protégée contre les robots spammeurs. Vous devez activer le JavaScript pour la visualiser. |
Publications associées :
27 publications trouvées2020
ACL
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy
crystal growth \& design, vol. 20, p. 2232
2020
2019
Competition between horizontal and vertical polariton lasing in planar microcavities
physical review b, vol. 99, p. 085304
2019
INV
Polariton lasing in planar microcavities and waveguides up to room temperature
10th Russian-French Workshop on Nanosciences and Nanotechnologies
2019
2018
ACL
Edge-emitting polariton laser and amplifier based on a ZnO waveguide
Light: Science & Applications, vol. 7, p. 84
2018
COM
Monolithic ZnO optical microcavities : from materials science to room-temperature polariton laser
SPIE Photonics West
2018
Polariton lasing in a ZnO waveguide up to room temperature
34th International Conference on the Physics of Semiconductors (ICPS)
2018
Room-temperature edge-emitting ZnO polariton lasers based on monolithic waweguides
19th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN)
2018
2017
Guided-modes in ZnO and GaN half-microcavities : room temperature lasing
18th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN)
2017
Guided-modes in ZnO and GaN half-microcavities : room temperature lasing
18th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN)
2017
AFF
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2017, Lille
2017
Low threshold lasing in bulk GaN microcavity up to 400 K
18th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN)
2017
2016
ACL
High reflectance dielectric distributed bragg reflectors for near ultra-violet planar microcavities: sio
journal of applied physics, vol. 120, p. 093107
2016
Polariton condensation phase diagram in wide-band-gap planar microcavities: gan versus zno
physical review b, vol. 93, p. 115205
2016
INV
Comparison of polariton condensation phase diagrams in GaN and ZnO planar microcavities
15èmes Journées de la Matière Condensée (JMC15), Bordeaux 22-26 août 2016, Société Française de Physique.
2016
AFF
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2016, Montpellier
2016
2015
ACL
Algan-based mqws grown on a thick relaxed algan buffer on aln templates emitting at 285 nm
optical materials express, vol. 5, p. 380
2015
Movpe grown periodic aln/baln heterostructure with high boron content
journal of crystal growth, vol. 414, p. 119
2015
Structural and optical investigations of algan mqws grown on a relaxed algan buffer on aln templates for emission at 280 nm
journal of crystal growth, vol. 432, p. 37
2015
COM
Algan-based mqws emitting at 280nm for vertical cavity surface emitting lasers
Optics infobase conference papers
2015
AFF
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2015, Grenoble
2015
2014
ACL
Influence of excitonic oscillator strengths on the optical properties of gan and zno
physical review b - condensed matter and materials physics, vol. 90, p. 045204
2014
Patterned silicon substrates: a common platform for room temperature gan and zno polariton lasers
applied physics letters, vol. 104, p. 241113
2014
2007
Low dislocation density high-quality thick hydride vapour phase epitaxy (hvpe) gan layers
journal of crystal growth, vol. 306, p. 86--93
2007
1993
Photoluminescence studies in strained inas/inp quantum-wells grown by hydride vapor-phase epitaxy
semiconductor science and technology, vol. 8, p. 1666--1670
1993
1991
Optical investigation in ultrathin inas/inp quantum-wells grown by hydride vapor-phase epitaxy
journal of applied physics, vol. 70, p. 1638--1641
1991
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