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Laboratoire de recherche

UMR 6602 - UCA/CNRS
Tutelle secondaire CHU Clermont-Ferrand
Membre de Clermont Auvergne INP

PHOTON

Pimpinelli Alberto


Photo
Fonction : Permanent (UCA)
Lieu d'exercice : EUPI Bat. 3/4/L
Equipe : N2-Théorie (PHOTON)
Téléphone : +33


Publications associées :
9 publications trouvées


2024
ACL
TSAMO G., NASTOVJAK A., SHWARTZ N., HOGGAN P., ROBERT-GOUMET C., PIMPINELLI A., PETIT M., RANGUIS A., GARDES E., SALL M., BIDEUX L., MONIER G.
Growth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations
journal of physical chemistry c, vol. 128, p. 5168--5178
2024 mar


2004
ACTI
GIL E., TRASSOUDAINE A., CASTELLUCI D., PIMPINELLI A., SAOUDI R., PARRIAUX O., MURAVAUD A., DARRAUD C.
Submicrometer scale growth morphology control for the making of photonic crystal structures
progress in compound semiconductor materials iii - electronic and optoelectronic applications
2004


2003
ACL
GIL E., NAPIERALA J., PIMPINELLI A., CADORET R., TRASSOUDAINE A., CASTELLUCI D.
Direct condensation modelling for a two-particle growth system: application to gaas grown by hydride vapour phase epitaxy
journal of crystal growth, vol. 258, p. 14--25
2003


PIMPINELLI A., CADORET R., GIL E., NAPIERALA J., TRASSOUDAINE A.
Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces
journal of crystal growth, vol. 258, p. 1--13
2003


ACTI
GIL E., TRASSOUDAINE A., CASTELLUCI D., PIMPINELLI A., SAOUDI R., PARRIAUX O., MURAVAUD A., DARRAUD C.
Submicrometer scale growth morphology control: a new route for the making of photonic crystal structures?
conference on advances in optical thin films
2003


2001
ACL
NAPIERALA J., GIL E., CASTELLUCI D., PIMPINELLI A., GERARD B.
Control of the growth morphologies of gaas stripes grown on patterned substrates by hvpe
optical materials, vol. 17, p. 315--318
2001


GIL E., VIDECOQ A., NAPIERALA J., CASTELLUCI D., PIMPINELLI A., GERARD B., JIMENEZ J., AVELLA M.
High-quality gaas-related lateral junctions on si by conformal growth
optical materials, vol. 17, p. 267--270
2001


GIL E., NAPIERALA J., CASTELLUCI D., PIMPINELLI A., CADORET R., GERARD B.
Selective growth of gaas by hvpe: keys for accurate control of the growth morphologies
journal of crystal growth, vol. 222, p. 482--496
2001


1999
ACTI
GIL E., NAPIERALA J., CASTELLUCI D., PIMPINELLI A., GERARD B., PRIBAT D.
Kinetic modelling of the selective epitaxy of gaas on patterned substrates by hvpe. application to the conformal growth of low defect density gaas layers on silicon
iii-v and iv-iv materials and processing challenges for highly integrated microelectronics and optoelectronics
1999




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