Pimpinelli Alberto
Fonction : | Permanent (UCA) |
Location : | EUPI Bat. 3/4/L |
Team : | N2-Théorie (PHOTON) |
Phone : | +33 |
e-mail : | This email address is being protected from spambots. You need JavaScript enabled to view it. |
Associated publications :
9 publications found2024
ACL
Growth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations
journal of physical chemistry c, vol. 128, p. 5168--5178
2024 mar



2004
ACTI
Submicrometer scale growth morphology control for the making of photonic crystal structures
progress in compound semiconductor materials iii - electronic and optoelectronic applications
2004

2003
ACL
Direct condensation modelling for a two-particle growth system: application to gaas grown by hydride vapour phase epitaxy
journal of crystal growth, vol. 258, p. 14--25
2003

Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces
journal of crystal growth, vol. 258, p. 1--13
2003

ACTI
Submicrometer scale growth morphology control: a new route for the making of photonic crystal structures?
conference on advances in optical thin films
2003

2001
ACL
Control of the growth morphologies of gaas stripes grown on patterned substrates by hvpe
optical materials, vol. 17, p. 315--318
2001

High-quality gaas-related lateral junctions on si by conformal growth
optical materials, vol. 17, p. 267--270
2001

Selective growth of gaas by hvpe: keys for accurate control of the growth morphologies
journal of crystal growth, vol. 222, p. 482--496
2001

1999
ACTI
Kinetic modelling of the selective epitaxy of gaas on patterned substrates by hvpe. application to the conformal growth of low defect density gaas layers on silicon
iii-v and iv-iv materials and processing challenges for highly integrated microelectronics and optoelectronics
1999

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