Trassoudaine Agnès
Fonction : | Permanent (UCA) |
Lieu d'exercice : | EUPI Bat. 3/4/L |
Equipe : | Minamat-3VAH (PHOTON) |
Section CNU : | 28 |
Téléphone : | +33473405449 |
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Publications associées :
81 publications trouvées2022
ACL
Anomalous ambipolar transport in depleted GaAs nanowires
Physical Review B, vol. 105, p. 195204
2022
2021
Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy
Nanotechnology, vol. 32, p. 155601
2021 jan 25
Long catalyst-free InAs nanowires grown on silicon by HVPE
CrystEngComm, vol. 23, p. 378
2021 jan 18
Selective area growth by hydride vapor phase epitaxy and optical properties of inas nanowire arrays
crystal growth & design, vol. 21, p. 5158
2021 jul
2020
Dynamics of Gold Droplet Formation on SiO 2 /Si(111) Surface
Journal of Physical Chemistry C, vol. 124, p. 11946--11951
2020 06
Formation of voids in selective area growth of InN nanorods in SiN x on GaN templates
Nano Futures, vol. 4, p. 025002
2020 may 29
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy
crystal growth \& design, vol. 20, p. 2232
2020
Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
Nano Express, vol. 1, p. 020019
2020 sep 04
2019
Selective growth of ordered hexagonal InN nanorods
CrystEngComm, vol. 21, p. 2702
2019 apr 15
Si doping of vapor–liquid–solid gaas nanowires: n-type or p-type?
Nano Letters, vol. 19, p. 4498--4504
2019 jun
COM
Position and composition controlled high quality (In, Ga)N nanowires grown by HVPE
13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
2019
AFF
Self-induced InGaN nanowires with a controlled InN mole fraction by HVPE
13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
2019
2018
ACL
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red
Nanotechnology, vol. 29, p. 465602
2018
Compositional control of homogeneous InGaN nanowires with the In content up to 90%.
Nanotechnology, vol. 30, p. 044001
2018
Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE.
Crystal Engineering Communication, vol. 20, p. 6207--6213
2018
Influence of silicon on the nucleation rate of GaAs nanowires on silicon substrates
The Journal of Physical Chemistry, vol. 122, p. 19230--19235
2018
ACTI
Monolithic integration of tricolor micro-LEDs and color mixing investigation by analogue and digital dimming
JJAP Special Issue. International workshop on Nitride Semiconductors, Kanazawa, Japan, 11-16 Novembre 2018
2018
INV
Hydride Vapor Phase Epitaxy of single crystalline III-V and III-N nanowires.
EMN Meeting on Nanowires, Prague, June 2018.
2018
COM
Charge and spin diffusion in GaAs nanowires grown by HVPE
7th NANOSEA International Conference NANO-structures and nanomaterials SElf-Assembly, Carqueiranne (NanoSEA)
2018
Growth of (In,Ga)N nanowires with a controlled indium mole fraction by HVPE
4,5- 7th NANOSEA International Conference NANO-structures and nanomaterials SElf-Assembly, Carqueiranne (NanoSEA), France
2018
Monolithic integration of tricolor micro-LEDs and color mixing investigation by analogue and digital dimming.
International workshop on Nitride Semiconductors, Kanazawa, Japan, 11-16 Novembre 2018.
2018
Self-induced and selective area growth of (In,Ga)N nanowires
IWN International workshop on Nitride Semiconductors, Kanazawa, Japan
2018
Self-induced growth of InN nanowires and selective area growth of In(Ga)N nanowires with a controlled mole fraction by HVPE
ISGN 7th International Symposium on Growth of III-Nitrides, Varsovie, Pologne
2018
AFF
Charge and spin transport in GaAs nanowires grown by HVPE
Nanowire week conference 2018, Hamilton, Canada
2018
Charge and spin transport in GaAs nanowires grown by HVPE
GDR PULSE, Atelier consacré à la préparation des substrats et des substrats structurés pour l’épitaxie, Villeneuve d’Ascq (IEMN)
2018
Charge and spin transport in GaAs nanowires grown by HVPE
Nanowire week conference 2018, Hamilton, Canada
2018
Growth of InxGa1-xN nanowires by HVPE with the control of the indium composition x and the substrate homogeneity
Réunion annuelle 2018 GANEX, Toulouse, France
2018
Hydride Vapor Phase Epitaxy of binary and ternary III-Nitride nanowires
Nanowire week conference 2018, Hamilton, Canada
2018
“HVPE growth of InGaN nanowires with a controlled indium mole fraction and selective area growth of well-ordered InN nano- and microwires
16 ème Journées Nano, Micro et Optoélectronique, JNMO, Agay
2018
2017
ACL
Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy
Nanotechnology, vol. 28, p. 125602
2017
ACTI
Hydride Vapor Phase Epitaxy (HVPE) growth of III-V and III-Nitrides nanowires on silicon
Energy Materials Nanotechnology EMN Epitaxy
2017 11
INV
Growth of III-Nitride Nanorods for Future Optoelectronics Applications.
18th International Conference on Physics of Light-Matter Coupling in Nanostructures, Neubaukirche in Würzburg, Germany, July 2017.
2017
HVPE growth of III-V nanostructures for high performance devices.
8th International Conference and Exhibition on Lasers, Optics and Photonics, Las Vegas, USA, 15-17 November 2017
2017
Highlights of the HVPE for the growth of GaN and InGaN nanowires.
5th Akasaki Research Center Symposium, Nagoya, Japan, Nov 2017.
2017
COM
III-Nitride based photovoltaic application on silicon: comparison between axial and core/shell nanowires devices
ICNS International Conference on Nitride Semiconductors, Strasbourg
2017
AFF
Catalyzed Growth of GaAs nanowires on Si(111) substrates by HVPE
Conférence plénière du GDR PULSE, Paris
2017
Croissance catalysée de nanofils de GaAs sur substrat de Si(111)
GDR PULSE, Atelier consacré aux techniques de caractérisations structurales, Nice
2017
Defect-free InGaN nanowires on silicon whatever the indium composition
12th International Conference on Nitride Semiconductors, Strasbourg
2017
Defect-free InGaN nanowires on silicon whatever the indium composition
Defect-free InGaN nanowires on silicon whatever the indium composition
2017
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2017, Lille
2017
2016
ACL
GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures
Crystal Growth and Design, vol. 16, p. 2509--2513
2016
Spontaneous formation of GaN/AlN core–shell nanowires on sapphire by hydride vapor phase epitaxy
Journal of Crystal Growth, vol. 454, p. 1--5
2016
ACTI
Self-catalyzed growth of GaAs nanowires on silicon by HVPE
Proceedings International Conference Laser Optics, Saint Petersbourg, Russie, LO 2016
2016
INV
HVPE for III-V nanostructures and nanowires.
Seminaire Université de Nagoya (Japon), Novembre 2016
2016
COM
Self-catalyzed growth of GaAs nanowires on silicon by HVPE
Laser Optics International Conference, St Petersbourg, Russie
2016
AFF
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2016, Montpellier
2016
2015
ACL
Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy
Journal of Crystal Growth, vol. 421, p. 27--32
2015
OS
Hydride VPE for current III-V and nitride semiconductor compound issues
Elsevier Thomas F. Kuech
2015
INV
Hydride VPE for current III-V and nitride semiconductor compound issues.
Seminaire Université Polytechnique de Madrid
2015
Hydride VPE for current III-V and nitride semiconductor compound issues.
Seminaire Université de Nagoya (Japon), mai 2015
2015
COM
(Ga,In)N nanostructures and nanowires grown by HVPE”
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon
2015
AFF
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE
GDR PULSE School Epitaxy updates and promises, Porquerolles, Septembre 2015
2015
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE
Workshop Nanowires, Barcelone, Espagne
2015
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2015, Grenoble
2015
2014
ACL
Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius
Nano Letters, vol. 14, p. 3938--3944
2014
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
Nano Letters, vol. 14, p. 559--562
2014
Vapor liquid solid-hydride vapor phase epitaxy (vls-hvpe) growth of ultra-long defect-free gaas nanowires: ab initio simulations supporting center nucleation
journal of chemical physics, vol. 140, p. 194706
2014 may
ACTI
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure
SPIE
2014
COM
Fast Growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy
IWNS International Workshop on Nitride Semiconductors, Wroclaw Pologne
2014
2013
ACL
Record high-aspect-ratio gaas nano-grating lines grown by hydride vapor phase epitaxy (hvpe)
journal of crystal growth, vol. 380, p. 93--98
2013
ACTI
Hydride vpe: the unexpected process for the fast growth of gaas and gan nanowires with record aspect ratio and polytypism-free crystalline structure
micro/nano materials, devices, and systems
2013
COM
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications
E-MRS Spring Meeting, Starsbourg, France
2013
2012
ACL
Catalyst-assisted hydride vapor phase epitaxy of gan nanowires: exceptional length and constant rod-like shape capability
nanotechnology, vol. 23, p. 405601
2012
Demonstration of crystal-vapor equilibrium leading to growth blockade of gan during selective area growth
journal of crystal growth, vol. 354, p. 135--141
2012
Exceptional crystal-defined bunched and hyperbunched gan nanorods grown by catalyst-free hvpe
crystal growth & design, vol. 12, p. 2251--2256
2012
2010
Complete hvpe experimental investigations: cartography of sag gan towards quasi-substrates or nanostructures
journal of crystal growth, vol. 312, p. 1899--1907
2010
Fast growth synthesis of gaas nanowires with exceptional length
nano letters, vol. 10, p. 1836--1841
2010
2009
A complete crystallographic study of gan epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (sag-hvpe)
journal of crystal growth, vol. 311, p. 1460--1465
2009
2008
Low-cost high-quality gan by one-step growth
journal of crystal growth, vol. 310, p. 924--929
2008
2007
Low dislocation density high-quality thick hydride vapour phase epitaxy (hvpe) gan layers
journal of crystal growth, vol. 306, p. 86--93
2007
Selective epitaxial growth of gaas tips for local spin injector applications
journal of crystal growth, vol. 306, p. 111--116
2007
2006
ACTI
Fabrication of photonic crystals by anisotropic crystalline growth by the hydrides method
Journal de Physique IV
2006
2004
ACL
Temperature influence on the growth of gallium nitride by hvpe in a mixed h-2/n-2 carrier gas
journal of crystal growth, vol. 260, p. 7--12
2004
ACTI
Submicrometer scale growth morphology control for the making of photonic crystal structures
progress in compound semiconductor materials iii - electronic and optoelectronic applications
2004
2003
ACL
Direct condensation modelling for a two-particle growth system: application to gaas grown by hydride vapour phase epitaxy
journal of crystal growth, vol. 258, p. 14--25
2003
Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces
journal of crystal growth, vol. 258, p. 1--13
2003
ACTI
Submicrometer scale growth morphology control: a new route for the making of photonic crystal structures?
conference on advances in optical thin films
2003
2001
ACL
Thermodynamical and kinetic study of the gan growth by hvpe under nitrogen
journal of crystal growth, vol. 222, p. 538--548
2001
1998
Kinetic study of si incorporation in inp by the hydride vapour phase epitaxy
journal of crystal growth, vol. 192, p. 402--409
1998
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