Langues

Research laboratory

UMR 6602 - UCA/CNRS
Tutelle secondaire CHU Clermont-Ferrand
Membre de Clermont Auvergne INP

Membres - PHOTON

Trassoudaine Agnès


Photo
Fonction : Permanent (UCA)
Location : EUPI Bat. 3/4/L
Team : Minamat-3VAH (PHOTON)
NUC section : 28
Phone : +33473405449



Associated publications :
81 publications found


2022
ACL
HIJAZI H., PAGET D., ROWE A., MONIER G., LAHLIL K., GIL E., TRASSOUDAINE A., CADIZ F., ANDRÉ Y., ROBERT-GOUMET C.
Anomalous ambipolar transport in depleted GaAs nanowires
Physical Review B, vol. 105, p. 195204
2022



2021
HIJAZI H., ZEGHOUANE M., JRIDI J., GIL E., CASTELLUCI D., DUBROVSKII V., BOUGEROL C., ANDRE Y., TRASSOUDAINE A.
Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy
Nanotechnology, vol. 32, p. 155601
2021 jan 25



GRÉGOIRE G., GIL E., ZEGHOUANE M., BOUGEROL C., HIJAZI H., CASTELLUCI D., DUBROVSKII V., TRASSOUDAINE A., GOKTAS N., LAPIERRE R., ANDRÉ Y.
Long catalyst-free InAs nanowires grown on silicon by HVPE
CrystEngComm, vol. 23, p. 378
2021 jan 18



GREGOIRE G., ZEGHOUANE M., GOOSNEY C., GOKTAS N., STAUDINGER P., SCHMID H., MOSELUND K., TALIERCIO T., TOURNIE E., TRASSOUDAINE A., GIL E., LAPIERRE R., ANDRE Y.
Selective area growth by hydride vapor phase epitaxy and optical properties of inas nanowire arrays
crystal growth & design, vol. 21, p. 5158
2021 jul



2020
HIJAZI H., LEROY F., MONIER G., GRÉGOIRE G., GIL E., TRASSOUDAINE A., DUBROVSKII V., CASTELLUCI D., GOKTAS N., LAPIERRE R., ANDRÉ Y., ROBERT-GOUMET C.
Dynamics of Gold Droplet Formation on SiO 2 /Si(111) Surface
Journal of Physical Chemistry C, vol. 124, p. 11946--11951
2020 06



ZEGHOUANE M., ANDRE Y., AVIT G., JRIDI J., BOUGEROL C., COULON P., FERRET P., CASTELLUCI D., GIL E., SHIELDS P., DUBROVSKII V., TRASSOUDAINE A.
Formation of voids in selective area growth of InN nanorods in SiN x on GaN templates
Nano Futures, vol. 4, p. 025002
2020 may 29



ZEGHOUANE M., AVIT G., ANDRE Y., TALIERCIO T., FERRET P., GIL E., CASTELLUCI D., DISSEIX P., LEYMARIE J., TOURNIE E., TRASSOUDAINE A.
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy
crystal growth \& design, vol. 20, p. 2232
2020



ANDRE Y., ISIK GOKTAS N., MONIER G., HIJAZI H., MEHDI H., BOUGEROL C., BIDEUX L., TRASSOUDAINE A., PAGET D., LEYMARIE J., GIL E., ROBERT-GOUMET C., LAPIERRE R.
Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
Nano Express, vol. 1, p. 020019
2020 sep 04



2019
ZEGHOUANE M., AVIT G., CORNELIUS T., SALOMON D., ANDRE Y., BOUGEROL C., TALIERCIO T., MEGUEKAM-SADO A., FERRET P., CASTELLUCI D., GIL E., TOURNIE E., THOMAS T., TRASSOUDAINE A.
Selective growth of ordered hexagonal InN nanorods
CrystEngComm, vol. 21, p. 2702
2019 apr 15



HIJAZI H., MONIER G., GIL E., TRASSOUDAINE A., BOUGEROL C., LEROUX C., CASTELLUCCI D., ROBERT-GOUMET C., HOGGAN P., ANDRE Y., ISIK GOKTAS N., LAPIERRE R., DUBROVSKII V.
Si doping of vapor–liquid–solid gaas nanowires: n-type or p-type?
Nano Letters, vol. 19, p. 4498--4504
2019 jun



COM
ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., TOUNIE E., TALERCIO T., MEGUEKAM A., ROBIN Y., DUBROVSKII V., AMANO H., TRASSOUDAINE A.
Position and composition controlled high quality (In, Ga)N nanowires grown by HVPE
13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
2019



AFF
JRIDI J., ZEGHOUNE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., ROBIN Y., DUBROVSKII V., AMANO H., TRASSOUDAINE A.
Self-induced InGaN nanowires with a controlled InN mole fraction by HVPE
13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
2019



2018
ACL
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., REVERET F., GIL E., MEDARD F., LEYMARIE J., JEAN T., DUBROVSKII V., TRASSOUDAINE A.
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red
Nanotechnology, vol. 29, p. 465602
2018



ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., ROBIN Y., FERRET P., CASTELLUCI D., GIL E., DUBROVSKII V., HIROSHI A., TRASSOUDAINE A.
Compositional control of homogeneous InGaN nanowires with the In content up to 90%.
Nanotechnology, vol. 30, p. 044001
2018



AVIT G., ZEGHOUANE M., ANDRE Y., CASTELLUCI D., GIL E., SI-YOUNG B., AMANO H., TRASSOUDAINE A.
Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE.
Crystal Engineering Communication, vol. 20, p. 6207--6213
2018



HIJAZI H., DUBROVSKII V., MONIER G., GIL E., LEROUX C., AVIT G., TRASSOUDAINE A., BOUGEROL C., CASTELLUCI D., ROBERT GOUMET C., ANDRE Y.
Influence of silicon on the nucleation rate of GaAs nanowires on silicon substrates
The Journal of Physical Chemistry, vol. 122, p. 19230--19235
2018



ACTI
ROBIN Y., HEMERET F., D'INCA G., PRISTOVSEK M., TRASSOUDAINE A., AMANO H.
Monolithic integration of tricolor micro-LEDs and color mixing investigation by analogue and digital dimming
JJAP Special Issue. International workshop on Nitride Semiconductors, Kanazawa, Japan, 11-16 Novembre 2018
2018



INV
TRASSOUDAINE A.
Hydride Vapor Phase Epitaxy of single crystalline III-V and III-N nanowires.
EMN Meeting on Nanowires, Prague, June 2018.
2018



COM
HIJAZI H., PAGET D., DUBROVSKI V., GIL E., MONIER G., CADIZ F., ALEKSEEV P., ULIN V., BERKOVITS V., LEROUX C., BOUGEROL C., TRASSOUDAINE A., CASTELLUCI D., ROBERT-GOUMET C., ANDRE Y.
Charge and spin diffusion in GaAs nanowires grown by HVPE
7th NANOSEA International Conference NANO-structures and nanomaterials SElf-Assembly, Carqueiranne (NanoSEA)
2018



ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., TRASSOUDAINE A.
Growth of (In,Ga)N nanowires with a controlled indium mole fraction by HVPE
4,5- 7th NANOSEA International Conference NANO-structures and nanomaterials SElf-Assembly, Carqueiranne (NanoSEA), France
2018



ROBIN Y., TRASSOUDAINE A., AMANO H.
Monolithic integration of tricolor micro-LEDs and color mixing investigation by analogue and digital dimming.
International workshop on Nitride Semiconductors, Kanazawa, Japan, 11-16 Novembre 2018.
2018



ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., TOURNIE E., TALERCIO T., MEGUEKAM A., ROBIN Y., DUBROVSKI V., AMANO H., TRASSOUDAINE A.
Self-induced and selective area growth of (In,Ga)N nanowires
IWN International workshop on Nitride Semiconductors, Kanazawa, Japan
2018



AVIT G., ZEGHOUANE M., ANDRE Y., BOUGEROL C., GIL E., CASTELLUCI D., FERRET P., ROCHE E., LEYMARIE J., MEDARD F., DUBROVSKI V., TRASSOUDAINE A.
Self-induced growth of InN nanowires and selective area growth of In(Ga)N nanowires with a controlled mole fraction by HVPE
ISGN 7th International Symposium on Growth of III-Nitrides, Varsovie, Pologne
2018



AFF
HIJAZI H., PAGET D., DUBROVSKI V., CADIZ F., ALEKSEEV P., MONIER G., LEROUX C., BOUGEROL C., TRASSOUDAINE A., CASTELLUCI D., GIL E., TRASSOUDAINE A., CASTELLUCI D., ROBERT-GOUMET C., ANDRE Y.
Charge and spin transport in GaAs nanowires grown by HVPE
Nanowire week conference 2018, Hamilton, Canada
2018



HIJAZI H., MONIER G., PAGET D., CADIZ F., ALEKSEEV P., ULIN V., LEROUX D., BOUGEROL C., CASTELLUCI D., TRASSOUDAINE A., GIL E., DUBROVSKII V., ROBERT-GOUMET C., ANDRE Y.
Charge and spin transport in GaAs nanowires grown by HVPE
GDR PULSE, Atelier consacré à la préparation des substrats et des substrats structurés pour l’épitaxie, Villeneuve d’Ascq (IEMN)
2018



HIJAZI H., PAGET D., DUBROVSKII V., GIL E., MONIER G., CADIZ F., ALEKSEEV P., ULIN V., BERKOVITS V., LEROUX C., BOUGEROL C., TRASSOUDAINE A., CASTELLUCI D., ROBERT-GOUMET C., ANDRE Y.
Charge and spin transport in GaAs nanowires grown by HVPE
Nanowire week conference 2018, Hamilton, Canada
2018



ZEGHOUANE M., ANDRE Y., AVIT Y., BOUGROL C., CASTELLUCI D., FERRET P., TRASSOUDAINE A.
Growth of InxGa1-xN nanowires by HVPE with the control of the indium composition x and the substrate homogeneity
Réunion annuelle 2018 GANEX, Toulouse, France
2018



ANDRE Y., ZEGHOUANE M., AVIT G., ROCHE E., BOUGEROL C., LEYMARIE J., MEDARD F., MONIER G., REVERET F., CASTELLUCI D., DUBROVSKII V., GIL E., TRASSOUDAINE A.
Hydride Vapor Phase Epitaxy of binary and ternary III-Nitride nanowires
Nanowire week conference 2018, Hamilton, Canada
2018



ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., DUBROVSKI V., TRASSOUDAINE A.
“HVPE growth of InGaN nanowires with a controlled indium mole fraction and selective area growth of well-ordered InN nano- and microwires
16 ème Journées Nano, Micro et Optoélectronique, JNMO, Agay
2018



2017
ACL
DONG Z., ANDRE Y., DUBROVSKII V., BOUGEROL C., LEROUX C., RAMDANI M., MONIER G., TRASSOUDAINE A., CASTELLUCI D., GIL E.
Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy
Nanotechnology, vol. 28, p. 125602
2017



ACTI
ANDRE Y., DONG Z., ROCHE E., AVIT G., DUBROVSKII V., BOUGEROL C., VARENNE C., AUDONNET F., FONTANILLE P., LEYMARIE J., MÉDARD F., MONIER G., REVERET F., CASTELLUCI D., TRASSOUDAINE A., GIL E.
Hydride Vapor Phase Epitaxy (HVPE) growth of III-V and III-Nitrides nanowires on silicon
Energy Materials Nanotechnology EMN Epitaxy
2017 11



INV
AMANO H., AVIT G., TRASSOUDAINE A.
Growth of III-Nitride Nanorods for Future Optoelectronics Applications.
18th International Conference on Physics of Light-Matter Coupling in Nanostructures, Neubaukirche in Würzburg, Germany, July 2017.
2017



AVIT G., ANDRE A., GIL E., TRASSOUDAINE A.
HVPE growth of III-V nanostructures for high performance devices.
8th International Conference and Exhibition on Lasers, Optics and Photonics, Las Vegas, USA, 15-17 November 2017
2017



TRASSOUDAINE A.
Highlights of the HVPE for the growth of GaN and InGaN nanowires.
5th Akasaki Research Center Symposium, Nagoya, Japan, Nov 2017.
2017



COM
LEKHAL K., AVIT G., SI-YOUNG B., OUSSMAN B., ROCHE E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., AMANO H.
III-Nitride based photovoltaic application on silicon: comparison between axial and core/shell nanowires devices
ICNS International Conference on Nitride Semiconductors, Strasbourg
2017



AFF
HIJAZI H., MONIER G., LEROUX C., DUBROVSKII V., GIL E., CASTELLUCI D., TRASSOUDAINE A., ROBERT-GOUMET C., ANDRE Y.
Catalyzed Growth of GaAs nanowires on Si(111) substrates by HVPE
Conférence plénière du GDR PULSE, Paris
2017



HIJAZI H., ANDRE Y., MONIER G., LEROUX C., AVIT G., CASTELLUCI D., BIDEUX L., TRASSOUDAINE A., GIL E., ROBERT-GOUMET C.
Croissance catalysée de nanofils de GaAs sur substrat de Si(111)
GDR PULSE, Atelier consacré aux techniques de caractérisations structurales, Nice
2017



AVIT G., ROCHE E., ZEGHOUANE M., ANDRE Y., GIL E., TRASSOUDAINE A., LEYMARIE J., MEDARD F.
Defect-free InGaN nanowires on silicon whatever the indium composition
12th International Conference on Nitride Semiconductors, Strasbourg
2017



ZEGHOUANE M., ROCHE E., AVIT G., ANDRE Y., TRASSOUDAINE A.
Defect-free InGaN nanowires on silicon whatever the indium composition
Defect-free InGaN nanowires on silicon whatever the indium composition
2017



ZEGHOUANE M., ANDRE Y., AVIT G., CASTELLUCI C., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2017, Lille
2017



2016
ACL
AVIT G., ANDRE Y., BOUGEROL C., CASTELLUCI D., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., RAMDANI M., ROCHE E., TRASSOUDAINE A.
GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures
Crystal Growth and Design, vol. 16, p. 2509--2513
2016



TRASSOUDAINE A., ROCHE E., BOUGEROL C., ANDRE Y., AVIT G., MONIER G., RAMDANI M., GIL E., CASTELLUCI D., DUBROVSKII V.
Spontaneous formation of GaN/AlN core–shell nanowires on sapphire by hydride vapor phase epitaxy
Journal of Crystal Growth, vol. 454, p. 1--5
2016



ACTI
DONG Z., ANDRE Y., DUBROVSKII V., BOUGEROL C., MONIER G., RAMDANI M., TRASSOUDAINE A., LEROUX C., CASTELLUCI D., GIL E.
Self-catalyzed growth of GaAs nanowires on silicon by HVPE
Proceedings International Conference Laser Optics, Saint Petersbourg, Russie, LO 2016
2016



INV
TRASSOUDAINE A.
HVPE for III-V nanostructures and nanowires.
Seminaire Université de Nagoya (Japon), Novembre 2016
2016



COM
DONG Z., ANDRE Y., DUBROVSKI V., BOUGEROL C., MONIER G., RAMDANI M., TRASSOUDAINE A., LEROUX C., GIL E.
Self-catalyzed growth of GaAs nanowires on silicon by HVPE
Laser Optics International Conference, St Petersbourg, Russie
2016



AFF
ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2016, Montpellier
2016



2015
ACL
REVERET F., ANDRE Y., GOURMALA O., LEYMARIE J., MIHAILOVIC M., LAGARDE D., GIL E., CASTELLUCI D., TRASSOUDAINE A.
Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy
Journal of Crystal Growth, vol. 421, p. 27--32
2015



OS
GIL E., ANDRE Y., CADORET R., TRASSOUDAINE A.
Hydride VPE for current III-V and nitride semiconductor compound issues
Elsevier Thomas F. Kuech
2015



INV
TRASSOUDAINE A.
Hydride VPE for current III-V and nitride semiconductor compound issues.
Seminaire Université Polytechnique de Madrid
2015



TRASSOUDAINE A.
Hydride VPE for current III-V and nitride semiconductor compound issues.
Seminaire Université de Nagoya (Japon), mai 2015
2015



COM
ROCHE E., TRASSOUDAINE A., ANDRE Y., AVIT G., GIL E., CASTELLUCI D., BOUGEROL C., DUBROVSKI V.
(Ga,In)N nanostructures and nanowires grown by HVPE”
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon
2015



AFF
ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., BOUGEROL C., DUBROVSKI V., DUSSAIGNE A., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015



ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015



DONG Z., ANDRE Y., GIL E., DUBROVSKII V., LEROUX C., BOUGEROL C., RAMDANI M., VARENNE C., AUDONNET F., FONTANILLE P., TRASSOUDAINE A., CASTELLUCI D., HARMAND J.
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE
GDR PULSE School Epitaxy updates and promises, Porquerolles, Septembre 2015
2015



DONG Z., ANDRE Y., GIL E., DUBROVSKII V., LEROUX C., RAMDANI M., VARENNE C., AUDONNET F., FONTANILLE P., TRASSOUDAINE A., CASTELLUCI D., HARMAND J.
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE
Workshop Nanowires, Barcelone, Espagne
2015



ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2015, Grenoble
2015



2014
ACL
GIL E., DUBROVSKII V., AVIT G., ANDRE Y., LEROUX C., LEKHAL K., GRECENKOV J., TRASSOUDAINE A., CASTELLUCI D., MONIER G., RAMDANI M., ROBERT C., BIDEUX L., HARMAND J., GLAS F.
Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius
Nano Letters, vol. 14, p. 3938--3944
2014



AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
Nano Letters, vol. 14, p. 559--562
2014



ANDRE Y., LEKHAL K., HOGGAN P., AVIT G., CADIZ F., ROWE A., PAGET D., PETIT E., LEROUX C., TRASSOUDAINE A., REDA RAMDANI M., MONIER G., COLAS D., AJIB R., CASTELLUCI D., GIL E.
Vapor liquid solid-hydride vapor phase epitaxy (vls-hvpe) growth of ultra-long defect-free gaas nanowires: ab initio simulations supporting center nucleation
journal of chemical physics, vol. 140, p. 194706
2014 may



ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure
SPIE
2014



COM
RAMDANI R., TRASSOUDAINE A., AVIT G., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., CASTELLUCI D.
Fast Growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy
IWNS International Workshop on Nitride Semiconductors, Wroclaw Pologne
2014



2013
ACL
GIL E., ANDRE Y., RAMDANI M., FONTAINE C., TRASSOUDAINE A., CASTELLUCI D.
Record high-aspect-ratio gaas nano-grating lines grown by hydride vapor phase epitaxy (hvpe)
journal of crystal growth, vol. 380, p. 93--98
2013



ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride vpe: the unexpected process for the fast growth of gaas and gan nanowires with record aspect ratio and polytypism-free crystalline structure
micro/nano materials, devices, and systems
2013



COM
ANDRE Y., AVIT G., LEKHAL K., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., FONTANILLE P., PIERRE G., PAGET D., ROWE A., PETIT E., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications
E-MRS Spring Meeting, Starsbourg, France
2013



2012
ACL
LEKHAL K., AVIT G., ANDRE Y., TRASSOUDAINE A., GIL E., VARENNE C., BOUGEROL C., MONIER G., CASTELLUCI D.
Catalyst-assisted hydride vapor phase epitaxy of gan nanowires: exceptional length and constant rod-like shape capability
nanotechnology, vol. 23, p. 405601
2012



ANDRE Y., TRASSOUDAINE A., GIL E., LEKHAL K., CHELDA-GOURMALA O., CASTELLUCI D., CADORET R.
Demonstration of crystal-vapor equilibrium leading to growth blockade of gan during selective area growth
journal of crystal growth, vol. 354, p. 135--141
2012



LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., AVIT G., CELLIER J., CASTELLUCI D.
Exceptional crystal-defined bunched and hyperbunched gan nanorods grown by catalyst-free hvpe
crystal growth & design, vol. 12, p. 2251--2256
2012



2010
CHELDA-GOURMALA O., TRASSOUDAINE A., ANDRE Y., BOUCHOULE S., GIL E., TOURRET J., CASTELLUCI D., CADORET R.
Complete hvpe experimental investigations: cartography of sag gan towards quasi-substrates or nanostructures
journal of crystal growth, vol. 312, p. 1899--1907
2010



RAMDANI M., GIL E., LEROUX C., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., BIDEUX L., MONIER G., ROBERT-GOUMET C., KUPKA R.
Fast growth synthesis of gaas nanowires with exceptional length
nano letters, vol. 10, p. 1836--1841
2010



2009
TOURRET J., GOURMALA O., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
A complete crystallographic study of gan epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (sag-hvpe)
journal of crystal growth, vol. 311, p. 1460--1465
2009



2008
TOURRET J., GOURMALA O., TRASSOUDAINE A., ANDRE Y., GIL E., CASTELLUCI D., CADORET R.
Low-cost high-quality gan by one-step growth
journal of crystal growth, vol. 310, p. 924--929
2008



2007
ANDRE Y., TRASSOUDAINE A., TOURRET J., CADORET R., GIL E., CASTELLUCI D., AOUDE O., DISSEIX P.
Low dislocation density high-quality thick hydride vapour phase epitaxy (hvpe) gan layers
journal of crystal growth, vol. 306, p. 86--93
2007



RAMDANI R., GIL E., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., PAGET D., ROWE A., GERARD B.
Selective epitaxial growth of gaas tips for local spin injector applications
journal of crystal growth, vol. 306, p. 111--116
2007



2006
ACTI
SAOUDI R., GIL E., TRASSOUDAINE A., CASTELLUCI D., RAMDANI R., DARRAUD C.
Fabrication of photonic crystals by anisotropic crystalline growth by the hydrides method
Journal de Physique IV
2006



2004
ACL
TRASSOUDAINE A., CADORET R., GIL E.
Temperature influence on the growth of gallium nitride by hvpe in a mixed h-2/n-2 carrier gas
journal of crystal growth, vol. 260, p. 7--12
2004



ACTI
GIL E., TRASSOUDAINE A., CASTELLUCI D., PIMPINELLI A., SAOUDI R., PARRIAUX O., MURAVAUD A., DARRAUD C.
Submicrometer scale growth morphology control for the making of photonic crystal structures
progress in compound semiconductor materials iii - electronic and optoelectronic applications
2004



2003
ACL
GIL E., NAPIERALA J., PIMPINELLI A., CADORET R., TRASSOUDAINE A., CASTELLUCI D.
Direct condensation modelling for a two-particle growth system: application to gaas grown by hydride vapour phase epitaxy
journal of crystal growth, vol. 258, p. 14--25
2003



PIMPINELLI A., CADORET R., GIL E., NAPIERALA J., TRASSOUDAINE A.
Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces
journal of crystal growth, vol. 258, p. 1--13
2003



ACTI
GIL E., TRASSOUDAINE A., CASTELLUCI D., PIMPINELLI A., SAOUDI R., PARRIAUX O., MURAVAUD A., DARRAUD C.
Submicrometer scale growth morphology control: a new route for the making of photonic crystal structures?
conference on advances in optical thin films
2003



2001
ACL
AUJOL E., NAPIERALA J., TRASSOUDAINE A., GIL E., CADORET R.
Thermodynamical and kinetic study of the gan growth by hvpe under nitrogen
journal of crystal growth, vol. 222, p. 538--548
2001



1998
TRASSOUDAINE A., PARILLAUD O., GOUMET E., CASTELLUCI D., GIL E., CADORET R.
Kinetic study of si incorporation in inp by the hydride vapour phase epitaxy
journal of crystal growth, vol. 192, p. 402--409
1998





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