BEJI H., DEVELAY V., MONIER G., BIDEUX L., HOGGAN P., BOUSQUET A., TOMASELLA E., ROBERT-GOUMET C.
Angle-resolved X-ray photoelectron spectroscopy intensity modeling of SiNx ultrathin layer grown on Si (100) and Si (111) substrates by N2 plasma treatment
Thin Solid Films, vol. 798, p. 140388
2024


TSAMO G., NASTOVJAK A., SHWARTZ N., HOGGAN P., ROBERT-GOUMET C., PIMPINELLI A., PETIT M., RANGUIS A., GARDES E., SALL M., BIDEUX L., MONIER G.
Growth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations
journal of physical chemistry c, vol. 128, p. 5168--5178
2024 mar


IBRAHIM S., NTOMPROUGKIDIS V., GOUTTE M., MONIER G., TRA\IKIA M., ANDANSON J., BONNET P., BOUSQUET A.
Reactive sputtering onto an ionic liquid, a new synthesis route for bismuth-based nanoparticles
nanoscale, vol. 15, p. 5499--5509
2023


PAGET D., AMAND T., HIJAZI H., ROWE A., MONIER G., GIL E., CADIZ F., GOUMET C., ANDRE Y.
Spin precession of light holes in the spin-orbit field of strained gaas nanowires
physical review b, vol. 108, p. 205402
2023 nov


HELAL H., BENAMARA Z., COMINI E., KACHA A., RABEHI A., KHIROUNI K., MONIER G., ROBERT-GOUMET C., DOMINGUEZ M.
A new approach to studying the electrical behavior and the inhomogeneities of the Schottky barrier height
The European Physical Journal Plus, vol. 137, p. 450
2022


HIJAZI H., PAGET D., ROWE A., MONIER G., LAHLIL K., GIL E., TRASSOUDAINE A., CADIZ F., ANDRÉ Y., ROBERT-GOUMET C.
Anomalous ambipolar transport in depleted GaAs nanowires
Physical Review B, vol. 105, p. 195204
2022


MEHDI H., REVERET F., ROBERT-GOUMET C., BIDEUX L., GRUZZA B., HOGGAN P., LEYMARIE J., ANDRE Y., GIL E., PELISSIER B., LEVERT T., PAGET D., MONIER G.
Investigation of n2 plasma gaas surface passivation efficiency against air exposure: towards an enhanced diode
applied surface science, vol. 579, p. 152191
2022 apr


TSAMO G., MONIER G., HOGGAN P., ROBERT-GOUMET C., PETIT M., RANGUIS A., BIDEUX L.
XPS modeling of GaN/GaAs nanostructure grown by the droplet epitaxy technique
Journal of Electron Spectroscopy and Related Phenomena, vol. 261, p. 147257
2022 07


BEJI H., MONIER G., BIDEUX L., BOUSQUET A., TOMASELLA E., ROBERT GOUMET C.
AR-XPS intensities modelisation of SiNx ultrathin layers on Si (100) created by N2 plasma treatment
JNSPE 2022 (Journées Nationales des Spectroscopies de PhotoEmission)
2022


TSAMO G., BIDEUX L., MONIER G., HOGGAN P., ROBERT GOUMET C.
Growth of GaN nanostructures on GaAs(111)A substrate by Droplet Epitaxy : A theoretical and experimental characterization by XPS spectroscopy
JNSPE 2022 (Journées Nationales des Spectroscopies de PhotoEmission)
2022


KOUICEM M., TOMASELLA E., BOUSQUET A., BATISSE N., MONIER G., ROBERT-GOUMET C., DUBOST L.
An investigation of adhesion mechanisms between plasma-treated PMMA support and aluminum thin films deposited by PVD
Applied Surface Science, vol. 564, p. 150322
2021


HIJAZI H., PAGET D., MONIER G., GRÉGOIRE G., LEYMARIE J., GIL E., CADIZ F., ROBERT-GOUMET C., ANDRÉ Y.
Charge and spin transport over record distances in GaAs metallic n -type nanowires
Physical Review B, vol. 103, p. 195314
2021 may


HELA H., BENAMARA Z., WEDERNI M., MOURAD S., KHIROUNI K., MONIER G., ROBERT-GOUMET C., RABEHI A., KACHA A., BAKKALI H., GONTARD L., DOMINGUEZ M.
Conduction mechanisms in Au/0.8 nm–GaN/n–GaAs schottky contacts in a wide temperature range
materials, vol. 14, p. 5909
2021


KACHA A., ANANI M., AKKAL B., BENAMARA Z., MONIER G., MEHDI H., VARENNE C., NDIAYE A., ROBERT-GOUMET C.
Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process
journal of alloys and compounds, vol. 876, p. 159596
2021


AHMAD Y., CHATENET M., MONIER G., DUBOIS M., GUERIN K., BERTHON-FABRY S.
Nouvelle technique de fluoration statique pour le controle de la teneur en eau des aerogels de carbone
sfec colloque de la societe francophone d'etude des carbones
2021 sep


KOUICEM M., TOMASELLA E., BOUSQUET A., DUBOIS M., MONIER G., ROBERT-GOUMET C., DUBOST L.
An investigation of adhesion mechanisms between a PMMA support and aluminum thin films deposited by cold plasma.
PLATHINIUM 2021
2021


BEJI H., DEVELAY V., MONIER G., BIDEUX L., HOGGAN P., BOUSQUET A., TOMASELLA E., ROBERT-GOUMET C.
Optimization of the anti-reflective coating (SiCxNyH) / Silicon interface by the nitridation process to improve silicon photovoltaic cell performance
PLATHINIUM 2021
2021


.
A new model of thermionic emission mechanism for non-ideal Schottky contacts and a method of extracting electrical parameters
the european physical journal plus, vol. 135, p. 895
2020 nov


.
Advances in tailoring the water content in porous carbon aerogels using RT-pulsed fluorination
journal of fluorine chemistry, vol. 238, p. 109633
2020 oct


HIJAZI H., LEROY F., MONIER G., GRÉGOIRE G., GIL E., TRASSOUDAINE A., DUBROVSKII V., CASTELLUCI D., GOKTAS N., LAPIERRE R., ANDRÉ Y., ROBERT-GOUMET C.
Dynamics of Gold Droplet Formation on SiO 2 /Si(111) Surface
Journal of Physical Chemistry C, vol. 124, p. 11946--11951
2020 06


.
Insights into the structure and the electrochemical reactivity of Cobalt-Manganese layered double hydroxides: application to H2O2 sensing
journal of physical chemistry c, vol. 124, p. 15585--15599
2020


ANDRE Y., ISIK GOKTAS N., MONIER G., HIJAZI H., MEHDI H., BOUGEROL C., BIDEUX L., TRASSOUDAINE A., PAGET D., LEYMARIE J., GIL E., ROBERT-GOUMET C., LAPIERRE R.
Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
Nano Express, vol. 1, p. 020019
2020 sep 04


.
Tailoring the structural and optical properties of bismuth oxide films deposited by reactive magnetron sputtering for photocatalytic application
materials chemistry and physics, vol. 243, p. 122580
2020 mar


NACEUR S., CHOUBANI M., SMIRI B., MAAREF H., MONIER G., ROBERT-GOUMET C., SFAXI L., GRUZZA B., MGHAIETH R.
The effect of nitridation on the optical properties of inas quantum dots grown on gaas substrate by mbe
vacuum, vol. 172, p. 109097
2020


FORANO C., FARHAT H., TAVIOT-GUÉHO C., MONIER G., BRIOIS V., MOUSTY C.
Insights into the Structure and the Electrochemical Reactivity of Cobalt-Manganese Layered Double Hydroxides: Application to H2O2 Sensing and glucose biosensing.
1st Annual Meeting of GDR 2088
2020 13


FARHAT H., TAVIOT-GUEHO C., MONIER G., BRIOIS V., FORANO C., MOUSTY C.
Mixed-valence CoMn Layered Double Hydoxides nanoparticles as efficient electrocalalysts for hydrogen peroxide sensing.
71st annual meeting ISE, SYMPOSIUM 2 - Nanomaterials in electroanalysis and nanoelectrochemical sensors
2020 31


HELAL H., BENAMARA Z., KACHA A., AMRANI M., RABEHI A., AKKAL B., MONIER G., ROBERT-GOUMET C.
Comparative study of ionic bombardment and heat treatment on the electrical behavior of au/gan/n-gaas schottky diodes
superlattices and microstructures, vol. 135, p. 106276
2019 nov


MONIER G., HOGGAN P., BIDEUX L., PAGET D., MEHDI H., KUBSKY S., DUMAS P., ROBERT-GOUMET C.
DFT and experimental FTIR investigations of early stages of (001) and (111)B GaAs surface nitridation
Applied Surface Science, vol. 465, p. 787--794
2019


HIJAZI H., MONIER G., GIL E., TRASSOUDAINE A., BOUGEROL C., LEROUX C., CASTELLUCCI D., ROBERT-GOUMET C., HOGGAN P., ANDRE Y., ISIK GOKTAS N., LAPIERRE R., DUBROVSKII V.
Si doping of vapor–liquid–solid gaas nanowires: n-type or p-type?
Nano Letters, vol. 19, p. 4498--4504
2019 jun


MEHDI H., REVERET F., BOUGEROL C., ROBERT-GOUMET C., HOGGAN P., BIDEUX L., GRUZZA B., LEYMARIE J., MONIER G.
Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process
Applied Surface Science, vol. 495, p. 143586
2019


ROBERT GOUMET C., MONIER G., MEHDI H., HOGGAN P., BIDEUX L., REVERET F., LEYMARIE J., MAHJOUB A., PELISSIER B.
Toward optimum N2 plasma nitriding process for GaAs(100) surface passivation
Journées Surfaces et Interfaces - JSI Nancy, Janvier 2019
2019


ROBERT-GOUMET C., MEHDI H., MONIER G., HOGGAN P., BIDEUX L., DUBROVSKII V.
Combined angle-resolved x-ray photoelectron spectroscopy, density functional theory and kinetic study of nitridation of gallium arsenide
applied surface science, vol. 427, p. 662--669
2018 jan


BACHAR A., BOUSQUET A., MEHDI H., MONIER G., ROBERT-GOUMET C., THOMAS L., BELMAHI M., GOULLET A., SAUVAGE T., TOMASELLA E.
Composition and optical properties tunability of hydrogenated silicon carbonitride thin films deposited by reactive magnetron sputtering
applied surface science, vol. 444, p. 293--302
2018 jun


HIJAZI H., DUBROVSKII V., MONIER G., GIL E., LEROUX C., AVIT G., TRASSOUDAINE A., BOUGEROL C., CASTELLUCI D., ROBERT GOUMET C., ANDRE Y.
Influence of silicon on the nucleation rate of GaAs nanowires on silicon substrates
The Journal of Physical Chemistry, vol. 122, p. 19230--19235
2018


ROBERT-GOUMET C., AYMEN MAHJOUB M., MONIER G., BIDEUX L., GRUZZA B.
Multi-mode elastic peak electron microscopy (MM-EPEM): a new imaging technique with an ultimate in-depth resolution for surface analysis
Ultramicroscopy, vol. 188, p. 13--18
2018 may


RABEHI A., AMRANI M., BENAMARA Z., AKKAL B., ZIANE A., GUERMOUI M., HATEM-KACHA A., MONIER G., GRUZZA B., BIDEUX L., ROBERT-GOUMET C.
Simulation and experimental studies of illumination effects on the current transport of nitridated gaas schottky diode
semiconductors, vol. 52, p. 1998--2006
2018


SCHUTZ M., PETIT M., MICHEZ L., RANGUIS A., MONIER G., ROBERT-GOUMET C., RAIMUNDO J.
Thiol-functionalization of mn5ge3 thin films
Applied surface science, vol. 451, p. 191--197
2018 sep


HIJAZI H., PAGET D., DUBROVSKI V., GIL E., MONIER G., CADIZ F., ALEKSEEV P., ULIN V., BERKOVITS V., LEROUX C., BOUGEROL C., TRASSOUDAINE A., CASTELLUCI D., ROBERT-GOUMET C., ANDRE Y.
Charge and spin diffusion in GaAs nanowires grown by HVPE
7th NANOSEA International Conference NANO-structures and nanomaterials SElf-Assembly, Carqueiranne (NanoSEA)
2018


MONIER G., BIDEUX L., GRUZZA B., HOGGAN P., MEHDI H., HIJAZI H., ROBERT-GOUMET C.
Global study of self-limited plasma nitridation process for GaAs(100) surface passivation
7th International Conference NANOSEA NANO-structures and nanomaterials SELf-Assembly
2018


HIJAZI H., AVIT G., PAGET D., MONIER G., GIL E., DONG Z., MONIER G., ROBERT-GOUMET C., CASTELLUCI D., TRASSOUDAINE A., LEROUX C., DUBROVSKI V., ANDRE Y.
Charge and spin diffusion in gallium arsenide nanowires grown by HVPE
16 ème Journées Nano, Micro et Optoélectronique, JNMO, Agay
2018


HIJAZI H., MONIER G., PAGET D., CADIZ F., ALEKSEEV P., ULIN V., LEROUX D., BOUGEROL C., CASTELLUCI D., TRASSOUDAINE A., GIL E., DUBROVSKII V., ROBERT-GOUMET C., ANDRE Y.
Charge and spin transport in GaAs nanowires grown by HVPE
GDR PULSE, Atelier consacré à la préparation des substrats et des substrats structurés pour l’épitaxie, Villeneuve d’Ascq (IEMN)
2018


HIJAZI H., PAGET D., DUBROVSKII V., GIL E., MONIER G., CADIZ F., ALEKSEEV P., ULIN V., BERKOVITS V., LEROUX C., BOUGEROL C., TRASSOUDAINE A., CASTELLUCI D., ROBERT-GOUMET C., ANDRE Y.
Charge and spin transport in GaAs nanowires grown by HVPE
Nanowire week conference 2018, Hamilton, Canada
2018


ANDRE Y., ZEGHOUANE M., AVIT G., ROCHE E., BOUGEROL C., LEYMARIE J., MEDARD F., MONIER G., REVERET F., CASTELLUCI D., DUBROVSKII V., GIL E., TRASSOUDAINE A.
Hydride Vapor Phase Epitaxy of binary and ternary III-Nitride nanowires
Nanowire week conference 2018, Hamilton, Canada
2018


MEHDI H., MONIER G., BIDEUX L., GRUZZA B., ROBERT GOUMET C., MAHJOUB A., PELISSIER B.
N2 plama passivation of GaAs(100) and air exposure study of GaN/GaAs structures by XPS, LEED, p-ARXPS and PL measurements
8ème conférence francophone sur les spectroscopies d’électrons (ELSPEC 2018), Biarritz, Juin 2018
2018


MEHDI H., MONIER G., ROBERT GOUMET C., HOGGAN P., BIDEUX L., REVERET F., VARENNE C., KACHA A., MAHJOUB A., PELISSIER B.
N2 plasma passivation of GaAs(100) surface and air exposure study of GaN/GaAs structures
Journées spectroscopies Electroniques, Janvier 2018, Strasbourg
2018


ROBERT GOUMET C., MONIER G., BACHAR A., BOUSQUET A., VARENNE C., TOMASELLA E.
Optical and electrical properties of silicon carbonitride thin films deposited by sputtering on Si (100) and nitrided Si (100): Effect of the interface
16th International Conference on Plasma Surface Engineering (PSE 2018), Septembre 2018, Garmisch-Partenkirchen
2018


MEHDI H., MONIER G., ROBERT GOUMET C., BIDEUX L., HOGGAN P., REVERET F., VARENNE C., KACHA A., MAHJOUB A., PELISSIER B.
Passivation par voie plasma N2 de la surface de GaAs(100) et étude de l’oxydation de la structures GaN/GaAs
Journees Surfaces et Interfaces (JSI2018), Janvier 2018, Strasbourg
2018


ASSAUD L., PITZSCHEL K., BARR M., PETIT M., MONIER G., HANBUCKEN M., SANTINACCI L.
Atomic layer deposition of hfo2 for integration into three-dimensional metal–insulator–metal devices
applied physics. a, materials science & processing, vol. 123, p. 768
2017 dec


PERISSE F., MENECIER S., DUFFOUR E., VACHER D., MONIER G., DESTREBECQ J., CZARNIAK P., GORSKI J., WILKOWSKI J.
Mdf treatment with a dielectric barrier discharge (dbd) torch
International journal of adhesion and adhesives, vol. 79, p. 18--22
2017


DONG Z., ANDRE Y., DUBROVSKII V., BOUGEROL C., LEROUX C., RAMDANI M., MONIER G., TRASSOUDAINE A., CASTELLUCI D., GIL E.
Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy
Nanotechnology, vol. 28, p. 125602
2017


ZHA J., ALI S., PEYROUX J., BATISSE N., CLAVES D., KHARITONOV A., MONIER G., DARMANIN T., GUITTARD F., ALEKSEIKO L.
Superhydrophobicity of polymer films via fluorine atoms covalent attachment and surface nano-texturing
Journal of Fluorine Chemistry, vol. 200, p. 123--132
2017


ANDRE Y., DONG Z., ROCHE E., AVIT G., DUBROVSKII V., BOUGEROL C., VARENNE C., AUDONNET F., FONTANILLE P., LEYMARIE J., MÉDARD F., MONIER G., REVERET F., CASTELLUCI D., TRASSOUDAINE A., GIL E.
Hydride Vapor Phase Epitaxy (HVPE) growth of III-V and III-Nitrides nanowires on silicon
Energy Materials Nanotechnology EMN Epitaxy
2017 11


MONIER G., BIDEUX L., ROBERT-GOUMET C., HOGGAN P., PAGET D., KUBSKY S., DUMAS P.
In situ ATR-FTIR investigations of early stages of GaAs (001) and (111)B surface nitridation
ECASIA'17 European Conference on Applications of Surface and Interface Analysis
2017


HIJAZI H., MONIER G., LEROUX C., DUBROVSKII V., GIL E., CASTELLUCI D., TRASSOUDAINE A., ROBERT-GOUMET C., ANDRE Y.
Catalyzed Growth of GaAs nanowires on Si(111) substrates by HVPE
Conférence plénière du GDR PULSE, Paris
2017


MEHDI H., ROBERT GOUMET C., MONIER G., BIDEUX L., GRUZZA B.
Combined XPS model and growth kinetic model of passivating GaN thin film elaborated on GaAs
Journées des Spectroscopies Electroniques JSE2017, Juin 2017, Paris
2017


MEHDI H., MONIER G., ROBERT GOUMET C., DUBROVSKII V.
Combined XPS model and growth kinetic model of passivating GaN thin film elaborated on GaAs
ICNS 12 - 12th International Conference on Nitride Semiconductors, Juillet 2017, Strasbourg
2017


HIJAZI H., ANDRE Y., MONIER G., LEROUX C., AVIT G., CASTELLUCI D., BIDEUX L., TRASSOUDAINE A., GIL E., ROBERT-GOUMET C.
Croissance catalysée de nanofils de GaAs sur substrat de Si(111)
GDR PULSE, Atelier consacré aux techniques de caractérisations structurales, Nice
2017


TRASSOUDAINE A., ROCHE E., BOUGEROL C., ANDRE Y., AVIT G., MONIER G., RAMDANI M., GIL E., CASTELLUCI D., DUBROVSKII V.
Spontaneous formation of GaN/AlN core–shell nanowires on sapphire by hydride vapor phase epitaxy
Journal of Crystal Growth, vol. 454, p. 1--5
2016


MAHJOUB M., MONIER G., ROBERT-GOUMET C., REVERET F., ECHABAANE M., CHAUDANSON D., PETIT M., BIDEUX L., GRUZZA B.
Synthesis and study of stable and size-controlled zno-sio2 quantum dots: application as a humidity sensor
journal of physical chemistry c, vol. 120, p. 11652--11662
2016 may


DONG Z., ANDRE Y., DUBROVSKII V., BOUGEROL C., MONIER G., RAMDANI M., TRASSOUDAINE A., LEROUX C., CASTELLUCI D., GIL E.
Self-catalyzed growth of GaAs nanowires on silicon by HVPE
Proceedings International Conference Laser Optics, Saint Petersbourg, Russie, LO 2016
2016


KACHA A., AKKAL B., BENAMARA Z., ROBERT-GOUMET C., MONIER G., GRUZZA B.
Study of the surface state density and potential in mis diode schottky using the surface photovoltage method
Molecular crystals and liquid crystals, vol. 627, p. 66--73
2016


MONIER G., MAHJOUB A., ROBERT-GOUMET C., BIDEUX L., GRUZZA B.
Nouvelle méthode de détermination de la fonction de correction d’un analyseur d’électron : Application aux études quantitatives par spectroscopies d’électrons : méthode combinée XPS + MM-EPES
ELSPEC 2016 Conférence francophone sur les spectroscopies d'électrons
2016


TOMASELLA  E., BOUSQUET A., ROBERT GOUMET C., MONIER G., MEHDI H.
Plasma investigation of reactive sputtering discharge used for SiCN:H thin film depositions. Correlation with structural and optical properties
CIP 2015, 20th International Colloquim on Plasma Processes, 1-5 June 2015, Saint Etienne, France
2016


DONG Z., ANDRE Y., DUBROVSKI V., BOUGEROL C., MONIER G., RAMDANI M., TRASSOUDAINE A., LEROUX C., GIL E.
Self-catalyzed growth of GaAs nanowires on silicon by HVPE
Laser Optics International Conference, St Petersbourg, Russie
2016


MAHJOUB A., ROBERT GOUMET C., MONIER G., BIDEUX L., GRUZZA B.
Determination of gold quantity deposited on silicon substrates by elastic electron measurements associated with Monte Carlo simulations and XPS measurements
ECASIA'15, 16th European Conference on Applications of Surface and Interface Analysis, Grenada, 28 sept.-1 oct, Espagne
2016


MONIER G., MAHJOUB A., ROBERT GOUMET C., PAULY N., TOUGGARD S.
Influence of surface and core hole effects for quantitative X-ray photoelectron spectroscopy by peak shape analysis
ECASIA'15, 16th European Conference on Applications of Surface and Interface Analysis, Grenada, 28 sept.-1 oct, Espagne
2016


KACHA A., AKKAL B., BENAMARA Z., AMRANI M., RABEHI A., BOUALEM S., ROBERT-GOUMET C., MONIER G., HDIA. H. KACHAA,B, B. AKKALA, Z. BENAMARAA, M. AMRANIA, A. RABEHIA, S. BOUALEMA, C. ROBERT-GOUMETB,C, G. MONIERB,C, H. MEHDIB H.
Theoretical and experimental study of the surface photovoltage in Au/GaAs and Au/GaN/GaAs MIS structures
MADICA, 9-10 Novembre 2016, Mahdia (Tunisie)
2016


MONIER G., MEHDI H., ROBERT GOUMET C., BACHAR A., BOUSQUET A., TOMASELLA E.
X-ray Photoelectron Spectroscopy (XPS) investigation of SiCxNy:H thin films on Si elaborated by PVD : atomic composition study
PSE 2016- 15th International Conference on Plasma Surface Engineering, September 12 - 16, 2016, in Garmisch-Partenkirchen, Allemagne
2016


MAHJOUB A., MONIER G., ROBERT GOUMET C., BIDEUX L., GRUZZA B.
XPS and MM-EPES techniques combined for the study of ultra thin films: Application to gold deposition on SiO2/Si structures
JSPS International Workshop Core-to-Core Program Atomically Controlled Processing for Ultra-large Scale Integration Marseille - France, July 9-10, 2015 :
2016


KACHA A., AKKAL A., BENAMARA Z., AMRANI M., MONIER G., ROBERT-GOUMET C., BIDEUX L., GRUZZA B.
Effects of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs
Superlattices and Microstructures, vol. 83, p. 827--833
2015


RABEHI M., AMRANI Z., BENAMARA Z., AKKAL A., KACHA A., ROBERT-GOUMET C., MONIER G., GRUZZA B.
Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode
The European Physical Journal – Applied Physics, vol. 72, p. 10102--10106
2015


MAHJOUB M., MONIER G., ROBERT-GOUMET C., BIDEUX L., GRUZZA B.
XPS combined with MM-EPES technique for in situ study of ultra thin film deposition: Application to an Au/SiO2/Si structure
Applied Surface Science, vol. 357, p. 1268--1273
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., BOUGEROL C., DUBROVSKI V., DUSSAIGNE A., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015


MONIER G., PAULY N., ROBERT-GOUMET C., MAHJOUB A., BIDEUX L., GRUZZA B., TOUGAARD S.
Influence of surface core hole effects for quantitative X-ray photoelectron spectroscopy by peak shape analysis
ECASIA'15 European Conference on Applications of Surface and Interface Analysis
2015


KACHA A., AKKAL B., BENAMARA Z., ROBERT GOUMET C., MONIER G., GRUZZA B.
Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method
13th International Conference on Frontiers of Polymers and Advanced Materials (ICFPAM) 29 March-2 April 2015, Marrakesh, Maroc
2015


PAULY N., DUBUS A., MONIER G., MAHJOUB M., BIDEUX L., GRUZZA B.
Energy dependence of the energy loss function parametrization of indium in the Drude-Lindhard model
Surface and Interface Analysis, vol. 46, p. 283--288
2014


PAULY N., DUBUS A., MONIER G., ROBERT-GOUMET C., MAHJOUB M., BIDEUX L., GRUZZA B.
Energy dependence of the energy loss function parametrization of indium in the drude-lindhard model
surface and interface analysis, vol. 46, p. 283--288
2014


MAHJOUB M., MONIER G., ROBERT-GOUMET C., BIDEUX L., GRUZZA B.
New method for the determination of the correction function of a hemisperical electron analyser based on elastic electron images
Journal of Electron Spectroscopy and Related Phenomena, vol. 197, p. 80--87
2014


GIL E., DUBROVSKII V., AVIT G., ANDRE Y., LEROUX C., LEKHAL K., GRECENKOV J., TRASSOUDAINE A., CASTELLUCI D., MONIER G., RAMDANI M., ROBERT C., BIDEUX L., HARMAND J., GLAS F.
Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius
Nano Letters, vol. 14, p. 3938--3944
2014


AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
Nano Letters, vol. 14, p. 559--562
2014


ANDRE Y., LEKHAL K., HOGGAN P., AVIT G., CADIZ F., ROWE A., PAGET D., PETIT E., LEROUX C., TRASSOUDAINE A., REDA RAMDANI M., MONIER G., COLAS D., AJIB R., CASTELLUCI D., GIL E.
Vapor liquid solid-hydride vapor phase epitaxy (vls-hvpe) growth of ultra-long defect-free gaas nanowires: ab initio simulations supporting center nucleation
journal of chemical physics, vol. 140, p. 194706
2014 may


ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure
SPIE
2014


RAMDANI R., TRASSOUDAINE A., AVIT G., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., CASTELLUCI D.
Fast Growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy
IWNS International Workshop on Nitride Semiconductors, Wroclaw Pologne
2014


MONIER G., MEHDI H., ROBERT-GOUMET C., VINCENT-RAYES J., BOUSQUET A., TOMASELLA E., VOGT A., AZDAD Z., CELLIER J., SAUVAGE T.
Growth of SiCN:H thin films on Si by PVD for antireflective coating: atomic composition and optical study
JSPS International Workshop “Core-to-Core Program Atomically Controlled Processing for Ultra-large Scale Integration
2014


ROBERT-GOUMET C., MAHJOUB M., MONIER G., BIDEUX L., CHELDA S., DUPUIS R., PETIT M., HOGGAN P., GRUZZA B.
Development of monte-carlo simulations for nano-patterning surfaces associated with mm-epes analysis: application to different si(111) nanoporous surfaces
surface science, vol. 618, p. 72--77
2013


PAGET D., BERKOVITS V., ULIN V., OZANAM F., DUMAS P., KUBSKY S., LAHLIL K., BIDEUX L., MONIER G.
Real time infrared absorption analysis of nitridation of gaas(001) by hydrazine solutions
journal of the electrochemical society, vol. 160, p. 229--236
2013


TALBI A., BENAMARA M., TALBI M., BENAMARA Z., AKKAL B., GRUZZA B., ROBERT-GOUMET C., BIDEUX L., MONIER G.
Study of inp(100)nitridation using aes spectroscopy and electrical analysis: effect of annealing after nitridation
journal of optoelectronics and advanced materials, vol. 15, p. 509--513
2013


ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride vpe: the unexpected process for the fast growth of gaas and gan nanowires with record aspect ratio and polytypism-free crystalline structure
micro/nano materials, devices, and systems
2013


MONIER G., BIDEUX L., ROBERT-GOUMET C., GRUZZA B., ANDRE Y., AVIT J., PETIT M., MENYHARD M., PAGET D., KUBSKY S.
High quality c-GaN ultra-thin film growth on GaAs (001): Passivating effect and initiation of cubic-GaN bulk structure growth
ECASIA'13 European Conference on Applications of Surface and Interface Analysis
2013


ANDRE Y., AVIT G., LEKHAL K., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., FONTANILLE P., PIERRE G., PAGET D., ROWE A., PETIT E., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications
E-MRS Spring Meeting, Starsbourg, France
2013


PETIT M., DAU M., MONIER G., MICHEZ L., BARRE X., SPIESSER A., THANH V., GLACHANT A., COUDREAU C., BIDEUX L., ROBERT-GOUMET C.
Carbon diffusion and reactivity in mn <inf>5</inf>ge <inf>3</inf> thin films
physica status solidi (c) current topics in solid state physics, vol. 9, p. 1374--1377
2012


LEKHAL K., AVIT G., ANDRE Y., TRASSOUDAINE A., GIL E., VARENNE C., BOUGEROL C., MONIER G., CASTELLUCI D.
Catalyst-assisted hydride vapor phase epitaxy of gan nanowires: exceptional length and constant rod-like shape capability
nanotechnology, vol. 23, p. 405601
2012


VARENNE C., NDIAYE A., BRUNET J., MONIER G., SPINELLE L., PAULY A., BIDEUX L., LAURON B., ROBERT-GOUMET C.
Comparison of inp schottky diodes based on au or pd sensing electrodes for no <inf>2</inf> and o <inf>3</inf> sensing
solid-state electronics, vol. 72, p. 29--37
2012


MONIER G., BIDEUX L., ROBERT-GOUMET C., GRUZZA B., PETIT M., LABAR J., MENYHARD M.
Passivation of gaas(001) surface by the growth of high quality c-gan ultra-thin film using low power glow discharge nitrogen plasma source
surface science, vol. 606, p. 1093--1099
2012


BRUNET J., SPINELLE L., NDIAYE A., DUBOIS M., MONIER G., VARENNE C., PAULY A., LAURON B., GUERIN K., HAMWI A.
Physical and chemical characterizations of nanometric indigo layers as efficient ozone filter for gas sensor devices
thin solid films, vol. 520, p. 971--977
2011


AMEUR K., MAZARI H., TIZI S., KHELIFI R., BENAMARA Z., BENSEDDIK N., CHAIB A., ZOUGAGH N., MOSTEFAOUI M., BIDEUX L., MONIER G., GRUZZA B., ROBERT-GOUMET C.
Study of the characteristics current-voltage and capacity-voltage of hg/gan/gaas structures
sensor letters, vol. 9, p. 2268--2271
2011


MONIER G., BIDEUX L., ROBERT-GOUMET C., GRUZZA B.
Study of high quality GaN epilayers formation on GaAs(001) using low power GDS nitrogen plasma source
ICFSI 13 International Conference on the formation of semiconductor Interfaces
2011


RAMDANI M., GIL E., LEROUX C., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., BIDEUX L., MONIER G., ROBERT-GOUMET C., KUPKA R.
Fast growth synthesis of gaas nanowires with exceptional length
nano letters, vol. 10, p. 1836--1841
2010


MANCEAU M., GAUME J., RIVATON A., GARDETTE J., MONIER G., BIDEUX L.
Further insights into the photodegradation of poly(3-hexylthiophene) by means of x-ray photoelectron spectroscopy
thin solid films, vol. 518, p. 7113--7118
2010


GRUZZA B., CHELDA S., ROBERT-GOUMET C., BIDEUX L., MONIER G.
Monte carlo simulation for multi-mode elastic peak electron spectroscopy of crystalline materials: effects of surface structure and excitation
surface science, vol. 604, p. 217--226
2010


FLORI M., GRUZZA B., BIDEUX L., MONIER G., ROBERT-GOUMET C., KRAWCZYK M.
Surface analysis of a plasma-nitrided structural steel
metalurgia international, vol. 15, p. 5--9
2010


BENAMARA Z., MECIRDI N., AKKAL B., MAZARI H., CHELLALI M., TALBI A., GRUZZA B., BEN KHALIFA S., ROBERT-GOUMET C., MONIER G., BIDEUX L.
Electrical characterization and electronic transport modelization in the inn/lnp structures
sensor letters, vol. 7, p. 712--715
2009


FLORI M., GRUZZA B., BIDEUX L., MONIER G., ROBERT-GOUMET C., BENAMARA Z.
First stages of surface steel nitriding: x-ray photoelectron spectroscopy and electrical measurements
applied surface science, vol. 255, p. 9206--9210
2009


DESPLATS O., GALLO P., DOUCET J., MONIER G., BIDEUX L., JALABERT L., ARNOULT A., LACOSTE G., ARMAND C., VOILLOT F., FONTAINE C.
On the use of a O2:SF6 plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth
applied surface science, vol. 255, p. 3897--3901
2009


ROBERT-GOUMET C., MONIER G., ZEFACK B., CHELDA S., BIDEUX L., GRUZZA B., AWITOR O.
Sem and xps studies of nanohole arrays on inp(1 0 0) surfaces created by coupling aao templates and low energy ar+ ion sputtering
surface science, vol. 603, p. 2923--2927
2009


MONIER G., BIDEUX L., DESPLATS O., FONTAINE C., ROBERT-GOUMET C., GRUZZA B.
Xps study of the o <inf>2</inf> /sf <inf>6</inf> microwave plasma oxidation of (0 0 1) gaas surfaces
applied surface science, vol. 256, p. 56--60
2009


MONIER G., BIDEUX L., DESPLATS O., FONTAINE C., ROBERT-GOUMET C., GRUZZA B.
XPS study of the O2/SF6 micro-wave plasma oxidation of (001)GaAs surfaces
ECOSS 26 26th European Conference on Surface Science
2009


FLORI M., GRUZZA B., BIDEUX L., MONIER G., ROBERT-GOUMET C.
A study of the 42crmo4 steel surface by quantitative xps electron spectroscopy
applied surface science, vol. 254, p. 4738--4743
2008


CHELDA S., ROBERT-GOUMET C., GRUZZA B., BIDEUX L., MONIER G.
Effect of surface roughness on epes and arepes measurements: flat and crenels silicon surfaces
surface science, vol. 602, p. 2114--2120
2008


BIDEUX L., MONIER G., MATOLIN V., ROBERT-GOUMET C., GRUZZA B.
Xps study of the formation of ultrathin gan film on gaas(1 0 0)
applied surface science, vol. 254, p. 4150--4153
2008


FLORI M., GRUZZA B., BIDEUX L., MONIER G., ROBERT-GOUMET C., CHERRE J., DE BAYNAST H.
Xps, epma and microstructural analysis of a defective industrial plasma-nitrided steel
surface and coatings technology, vol. 202, p. 5887--5894
2008


ROBERT-GOUMET C., PETIT M., BIDEUX L., GRUZZA B., MONIER G., MATOLIN V., SKALA T., TSUD N., PRINCE K.
Combined eels, leed and sr-xps study of ultra-thin crystalline layers of indium nitride on inp(1 0 0)-effect of annealing at 450 °c
applied surface science, vol. 253, p. 4445--4449
2007


BEN KHALIFA S., GRUZZA B., ROBERT-GOUMET C., BIDEUX L., MONIER G., SAIDI F., M'GHAIETH R., HJIRI M., HAMILA R., HASSEN F., MAAREF H., BREMOND G., BEJI L.
Study of porous iii-v semiconductors by electron spectroscopies (aes and xps) and optical spectroscopy (pl): effect of ionic bombardment and nitridation process
surface science, vol. 601, p. 4531--4535
2007