Robert Goumet Christine
Fonction : | Permanent (UCA) |
Location : | EUPI Bat. 3/4/L |
Team : | Minamat-Surfaces (PHOTON) |
NUC section : | 28 |
Phone : | +33473405161 |
e-mail : | This email address is being protected from spambots. You need JavaScript enabled to view it. |
Homepage : | http://crg.weetamin.net/ |
Associated publications :
102 publications found2024
ACL
Angle-resolved X-ray photoelectron spectroscopy intensity modeling of SiNx ultrathin layer grown on Si (100) and Si (111) substrates by N2 plasma treatment
Thin Solid Films, vol. 798, p. 140388
2024
Growth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations
journal of physical chemistry c, vol. 128, p. 5168--5178
2024 mar
AFF
Characterizing Critical Buried Interfaces by Inelastic Background Analysis (IBA) using Lab-Scale Hard X-ray Spectroscopy
ECASIA24
2024
Characterizing Critical Buried Interfaces by Inelastic Background Analysis (IBA) using Lab-Scale Hard X-ray Spectroscopy
JNSPE2024 JOURNEES NATIONALES DES SPECTROSCOPIES DE PHOTOEMISSION
2024
2023
ACL
Assessing advanced methods in XPS and HAXPES for determining the thicknesses of high-k oxide materials: From ultra-thin layers to deeply buried interfaces
Applied Surface Science, vol. 609, p. 155317
2023
Spin precession of light holes in the spin-orbit field of strained gaas nanowires
physical review b, vol. 108, p. 205402
2023 nov
2022
A new approach to studying the electrical behavior and the inhomogeneities of the Schottky barrier height
The European Physical Journal Plus, vol. 137, p. 450
2022
Anomalous ambipolar transport in depleted GaAs nanowires
Physical Review B, vol. 105, p. 195204
2022
Investigation of n2 plasma gaas surface passivation efficiency against air exposure: towards an enhanced diode
applied surface science, vol. 579, p. 152191
2022 apr
New directions in the analysis of buried interfaces for device technology by hard x-ray photoemission
faraday discussions, vol. 2022, p. 1
2022
XPS modeling of GaN/GaAs nanostructure grown by the droplet epitaxy technique
Journal of Electron Spectroscopy and Related Phenomena, vol. 261, p. 147257
2022 07
COM
AR-XPS intensities modelisation of SiNx ultrathin layers on Si (100) created by N2 plasma treatment
JNSPE 2022 (Journées Nationales des Spectroscopies de PhotoEmission)
2022
Characterizing critical buried interfaces by analysis of the inelastic background in Hard X-ray Photoelectron Spectroscopy
JNSPE 2022 (Journées Nationales des Spectroscopies de PhotoEmission)
2022
Growth of GaN nanostructures on GaAs(111)A substrate by Droplet Epitaxy : A theoretical and experimental characterization by XPS spectroscopy
JNSPE 2022 (Journées Nationales des Spectroscopies de PhotoEmission)
2022
2021
ACL
An investigation of adhesion mechanisms between plasma-treated PMMA support and aluminum thin films deposited by PVD
Applied Surface Science, vol. 564, p. 150322
2021
Charge and spin transport over record distances in GaAs metallic n -type nanowires
Physical Review B, vol. 103, p. 195314
2021 may
Conduction mechanisms in Au/0.8 nm–GaN/n–GaAs schottky contacts in a wide temperature range
materials, vol. 14, p. 5909
2021
Effect of metallic contacts diffusion on Au/GaAs and Au/GaN/GaAs SBDs electrical quality during their fabrication process
journal of alloys and compounds, vol. 876, p. 159596
2021
COM
An investigation of adhesion mechanisms between a PMMA support and aluminum thin films deposited by cold plasma.
PLATHINIUM 2021
2021
AFF
Characterizing Critical Buried Interfaces by Inelastic Background Analysis using Lab Scale Hard X ray Spectroscopy
JSE 2021
2021
Optimization of the anti-reflective coating (SiCxNyH) / Silicon interface by the nitridation process to improve silicon photovoltaic cell performance
PLATHINIUM 2021
2021
2020
ACL
A new model of thermionic emission mechanism for non-ideal Schottky contacts and a method of extracting electrical parameters
the european physical journal plus, vol. 135, p. 895
2020 nov
Dynamics of Gold Droplet Formation on SiO 2 /Si(111) Surface
Journal of Physical Chemistry C, vol. 124, p. 11946--11951
2020 06
Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
Nano Express, vol. 1, p. 020019
2020 sep 04
The effect of nitridation on the optical properties of inas quantum dots grown on gaas substrate by mbe
vacuum, vol. 172, p. 109097
2020
2019
Comparative study of ionic bombardment and heat treatment on the electrical behavior of au/gan/n-gaas schottky diodes
superlattices and microstructures, vol. 135, p. 106276
2019 nov
DFT and experimental FTIR investigations of early stages of (001) and (111)B GaAs surface nitridation
Applied Surface Science, vol. 465, p. 787--794
2019
Si doping of vapor–liquid–solid gaas nanowires: n-type or p-type?
Nano Letters, vol. 19, p. 4498--4504
2019 jun
Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process
Applied Surface Science, vol. 495, p. 143586
2019
INV
Passivation de surfaces GaAs(100) par plasma N2 à faible puissance. Mise en évidence de la diffusion de l’azote et de l’arsenic par modélisation de signaux AR-XPS
Journées Spectroscopies Electroniques - JSE Nancy, Janvier 2019
2019
COM
Silicon carbonitride thin films prepared by radiofrequency magnetron sputtering on Si (100) enhanced by an ECR plasma source
ECASIA 2019
2019
AFF
Toward optimum N2 plasma nitriding process for GaAs(100) surface passivation
Journées Surfaces et Interfaces - JSI Nancy, Janvier 2019
2019
2018
ACL
Combined angle-resolved x-ray photoelectron spectroscopy, density functional theory and kinetic study of nitridation of gallium arsenide
applied surface science, vol. 427, p. 662--669
2018 jan
Composition and optical properties tunability of hydrogenated silicon carbonitride thin films deposited by reactive magnetron sputtering
applied surface science, vol. 444, p. 293--302
2018 jun
Influence of silicon on the nucleation rate of GaAs nanowires on silicon substrates
The Journal of Physical Chemistry, vol. 122, p. 19230--19235
2018
Multi-mode elastic peak electron microscopy (MM-EPEM): a new imaging technique with an ultimate in-depth resolution for surface analysis
Ultramicroscopy, vol. 188, p. 13--18
2018 may
Simulation and experimental studies of illumination effects on the current transport of nitridated gaas schottky diode
semiconductors, vol. 52, p. 1998--2006
2018
Thiol-functionalization of mn5ge3 thin films
Applied surface science, vol. 451, p. 191--197
2018 sep
INV
Vers une nouvelle method d’analyse adaptée à l’échelle nanométrique : la microscopie électronique élastique (MM-EPEM)
Journées Spectroscopies Electroniques - JSE Strasbourg, Janvier 2018
2018
COM
Charge and spin diffusion in GaAs nanowires grown by HVPE
7th NANOSEA International Conference NANO-structures and nanomaterials SElf-Assembly, Carqueiranne (NanoSEA)
2018
Global study of self-limited plasma nitridation process for GaAs(100) surface passivation
7th International Conference NANOSEA NANO-structures and nanomaterials SELf-Assembly
2018
AFF
Charge and spin transport in GaAs nanowires grown by HVPE
GDR PULSE, Atelier consacré à la préparation des substrats et des substrats structurés pour l’épitaxie, Villeneuve d’Ascq (IEMN)
2018
Charge and spin transport in GaAs nanowires grown by HVPE
Nanowire week conference 2018, Hamilton, Canada
2018
N2 plama passivation of GaAs(100) and air exposure study of GaN/GaAs structures by XPS, LEED, p-ARXPS and PL measurements
8ème conférence francophone sur les spectroscopies d’électrons (ELSPEC 2018), Biarritz, Juin 2018
2018
N2 plasma passivation of GaAs(100) surface and air exposure study of GaN/GaAs structures
Journées spectroscopies Electroniques, Janvier 2018, Strasbourg
2018
Optical and electrical properties of silicon carbonitride thin films deposited by sputtering on Si (100) and nitrided Si (100): Effect of the interface
16th International Conference on Plasma Surface Engineering (PSE 2018), Septembre 2018, Garmisch-Partenkirchen
2018
Passivation par voie plasma N2 de la surface de GaAs(100) et étude de l’oxydation de la structures GaN/GaAs
Journees Surfaces et Interfaces (JSI2018), Janvier 2018, Strasbourg
2018
2017
COM
Détermination de la fonction de correction d’un HSA par imagerie élastique. Applications en spectroscopies XPS et EPES
Journées des Spectroscopies Electroniques JSE2017, Juin 2017, Paris
2017
In situ ATR-FTIR investigations of early stages of GaAs (001) and (111)B surface nitridation
ECASIA'17 European Conference on Applications of Surface and Interface Analysis
2017
AFF
Catalyzed Growth of GaAs nanowires on Si(111) substrates by HVPE
Conférence plénière du GDR PULSE, Paris
2017
Combined XPS model and growth kinetic model of passivating GaN thin film elaborated on GaAs
ICNS 12 - 12th International Conference on Nitride Semiconductors, Juillet 2017, Strasbourg
2017
Combined XPS model and growth kinetic model of passivating GaN thin film elaborated on GaAs
Journées des Spectroscopies Electroniques JSE2017, Juin 2017, Paris
2017
Croissance catalysée de nanofils de GaAs sur substrat de Si(111)
GDR PULSE, Atelier consacré aux techniques de caractérisations structurales, Nice
2017
2016
ACL
Synthesis and study of stable and size-controlled zno-sio2 quantum dots: application as a humidity sensor
journal of physical chemistry c, vol. 120, p. 11652--11662
2016 may
ACTI
Study of the surface state density and potential in mis diode schottky using the surface photovoltage method
Molecular crystals and liquid crystals, vol. 627, p. 66--73
2016
INV
MM-EPES : Non destructive method for thin films analysis. Applications to Si nanoporous surfaces and Au deposits on SiO2/Si
JSPS International Workshop Core-to-Core Program Atomically Controlled Processing for Ultra-large Scale Integration Marseille - France, July 9-10, 2015
2016
COM
Conférence : Nouvelle méthode de détermination de la fonction de correction d’un analyseur hémisphérique et applications en XPS et EPES
ELSPEC2016– 6ème Conférence Francophone sur les Spectroscopies d’électrons, Meudon 2016
2016
New method for the determination of the correction function - Application for an ultimate resolution in the quantitative study of electron spectroscopies
ECASIA'15, 16th European Conference on Applications of Surface and Interface Analysis, Grenada, 28 sept.-1 oct, Espagne
2016
Nouvelle méthode de détermination de la fonction de correction d’un analyseur d’électron : Application aux études quantitatives par spectroscopies d’électrons : méthode combinée XPS + MM-EPES
ELSPEC 2016 Conférence francophone sur les spectroscopies d'électrons
2016
Plasma investigation of reactive sputtering discharge used for SiCN:H thin film depositions. Correlation with structural and optical properties
CIP 2015, 20th International Colloquim on Plasma Processes, 1-5 June 2015, Saint Etienne, France
2016
AFF
Determination of gold quantity deposited on silicon substrates by elastic electron measurements associated with Monte Carlo simulations and XPS measurements
ECASIA'15, 16th European Conference on Applications of Surface and Interface Analysis, Grenada, 28 sept.-1 oct, Espagne
2016
Influence of surface and core hole effects for quantitative X-ray photoelectron spectroscopy by peak shape analysis
ECASIA'15, 16th European Conference on Applications of Surface and Interface Analysis, Grenada, 28 sept.-1 oct, Espagne
2016
MM-EPES : Non destructive method for thin films analysis. Applications to Si nanoporous surfaces and Au deposits on SiO2/Si
ECASIA'15, 16th European Conference on Applications of Surface and Interface Analysis, Grenada, 28 sept.-1 oct, Espagne
2016
Theoretical and experimental study of the surface photovoltage in Au/GaAs and Au/GaN/GaAs MIS structures
MADICA, 9-10 Novembre 2016, Mahdia (Tunisie)
2016
X-ray Photoelectron Spectroscopy (XPS) investigation of SiCxNy:H thin films on Si elaborated by PVD : atomic composition study
PSE 2016- 15th International Conference on Plasma Surface Engineering, September 12 - 16, 2016, in Garmisch-Partenkirchen, Allemagne
2016
XPS and MM-EPES techniques combined for the study of ultra thin films: Application to gold deposition on SiO2/Si structures
JSPS International Workshop Core-to-Core Program Atomically Controlled Processing for Ultra-large Scale Integration Marseille - France, July 9-10, 2015 :
2016
2015
ACL
Effects of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs
Superlattices and Microstructures, vol. 83, p. 827--833
2015
Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode
The European Physical Journal – Applied Physics, vol. 72, p. 10102--10106
2015
XPS combined with MM-EPES technique for in situ study of ultra thin film deposition: Application to an Au/SiO2/Si structure
Applied Surface Science, vol. 357, p. 1268--1273
2015
COM
MM-EPES: Non destructiv method for thin films analysis. Applications to different Si nanoporous surfaces and Au depositions on SiO2/Si
- A*MIDEX - JSPS International Workshop “Core-to-Core Program Atomically Controlled Processing for Ultra-large Scale Integration”, Marseille - France, July 2015
2015
AFF
Influence of surface core hole effects for quantitative X-ray photoelectron spectroscopy by peak shape analysis
ECASIA'15 European Conference on Applications of Surface and Interface Analysis
2015
Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method
13th International Conference on Frontiers of Polymers and Advanced Materials (ICFPAM) 29 March-2 April 2015, Marrakesh, Maroc
2015
2014
ACL
Energy dependence of the energy loss function parametrization of indium in the drude-lindhard model
surface and interface analysis, vol. 46, p. 283--288
2014
New method for the determination of the correction function of a hemisperical electron analyser based on elastic electron images
Journal of Electron Spectroscopy and Related Phenomena, vol. 197, p. 80--87
2014
Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius
Nano Letters, vol. 14, p. 3938--3944
2014
COM
Growth of SiCN:H thin films on Si by PVD for antireflective coating: atomic composition and optical study
JSPS International Workshop “Core-to-Core Program Atomically Controlled Processing for Ultra-large Scale Integration
2014
2013
ACL
Development of monte-carlo simulations for nano-patterning surfaces associated with mm-epes analysis: application to different si(111) nanoporous surfaces
surface science, vol. 618, p. 72--77
2013
Study of inp(100)nitridation using aes spectroscopy and electrical analysis: effect of annealing after nitridation
journal of optoelectronics and advanced materials, vol. 15, p. 509--513
2013
COM
High quality c-GaN ultra-thin film growth on GaAs (001): Passivating effect and initiation of cubic-GaN bulk structure growth
ECASIA'13 European Conference on Applications of Surface and Interface Analysis
2013
Monte Carlo simulation for Multi-Mode Elastic Peak Electron Spectroscopy. Application to a new imagery (MM-EPEM)
European Conference on Applications of Surface and Interface Analysis ECASIA, Cagliari (Sardinia) Octobre 2013
2013
2012
ACL
Carbon diffusion and reactivity in mn <inf>5</inf>ge <inf>3</inf> thin films
physica status solidi (c) current topics in solid state physics, vol. 9, p. 1374--1377
2012
Comparison of inp schottky diodes based on au or pd sensing electrodes for no <inf>2</inf> and o <inf>3</inf> sensing
solid-state electronics, vol. 72, p. 29--37
2012
Passivation of gaas(001) surface by the growth of high quality c-gan ultra-thin film using low power glow discharge nitrogen plasma source
surface science, vol. 606, p. 1093--1099
2012
2011
Study of the characteristics current-voltage and capacity-voltage of hg/gan/gaas structures
sensor letters, vol. 9, p. 2268--2271
2011
AFF
Study of high quality GaN epilayers formation on GaAs(001) using low power GDS nitrogen plasma source
ICFSI 13 International Conference on the formation of semiconductor Interfaces
2011
2010
ACL
Fast growth synthesis of gaas nanowires with exceptional length
nano letters, vol. 10, p. 1836--1841
2010
Monte carlo simulation for multi-mode elastic peak electron spectroscopy of crystalline materials: effects of surface structure and excitation
surface science, vol. 604, p. 217--226
2010
Surface analysis of a plasma-nitrided structural steel
metalurgia international, vol. 15, p. 5--9
2010
2009
Electrical characterization and electronic transport modelization in the inn/lnp structures
sensor letters, vol. 7, p. 712--715
2009
First stages of surface steel nitriding: x-ray photoelectron spectroscopy and electrical measurements
applied surface science, vol. 255, p. 9206--9210
2009
Sem and xps studies of nanohole arrays on inp(1 0 0) surfaces created by coupling aao templates and low energy ar+ ion sputtering
surface science, vol. 603, p. 2923--2927
2009
Xps study of the o <inf>2</inf> /sf <inf>6</inf> microwave plasma oxidation of (0 0 1) gaas surfaces
applied surface science, vol. 256, p. 56--60
2009
AFF
XPS study of the O2/SF6 micro-wave plasma oxidation of (001)GaAs surfaces
ECOSS 26 26th European Conference on Surface Science
2009
2008
ACL
A study of the 42crmo4 steel surface by quantitative xps electron spectroscopy
applied surface science, vol. 254, p. 4738--4743
2008
Effect of surface roughness on epes and arepes measurements: flat and crenels silicon surfaces
surface science, vol. 602, p. 2114--2120
2008
Xps study of the formation of ultrathin gan film on gaas(1 0 0)
applied surface science, vol. 254, p. 4150--4153
2008
Xps, epma and microstructural analysis of a defective industrial plasma-nitrided steel
surface and coatings technology, vol. 202, p. 5887--5894
2008
2007
Combined eels, leed and sr-xps study of ultra-thin crystalline layers of indium nitride on inp(1 0 0)-effect of annealing at 450 °c
applied surface science, vol. 253, p. 4445--4449
2007
Study of porous iii-v semiconductors by electron spectroscopies (aes and xps) and optical spectroscopy (pl): effect of ionic bombardment and nitridation process
surface science, vol. 601, p. 4531--4535
2007
2006
COM
Etude par spectroscopies électroniques (SR-XPS, EELS) du recuit de films ultra-minces d’InN sur substrats d’InP(100)
ELSPEC, Saclay, 2006
2006
1999
ACL
Epitaxial growth of inasxp1-x/inp quantum wells by hvpe
applied surface science, vol. 142, p. 637--641
1999
1998
Some applications of elastic peak electron spectroscopy for semiconductor surface studies
surface and interface analysis, vol. 26, p. 903--907
1998
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