Langues

Research laboratory

UMR 6602 - UCA/CNRS
Tutelle secondaire CHU Clermont-Ferrand
Membre de Clermont Auvergne INP

Leymarie Joël


Photo
Fonction : Permanent (UCA)
Location : EUPI Bat. 3/4/L
Team : N2-Spectro. Opt. (PHOTON)
NUC section : 28
Phone : +33473407026



Associated publications :
42 publications found


2021
ACL
HIJAZI H., PAGET D., MONIER G., GRÉGOIRE G., LEYMARIE J., GIL E., CADIZ F., ROBERT-GOUMET C., ANDRÉ Y.
Charge and spin transport over record distances in GaAs metallic n -type nanowires
Physical Review B, vol. 103, p. 195314
2021 may



2020
ZEGHOUANE M., AVIT G., ANDRE Y., TALIERCIO T., FERRET P., GIL E., CASTELLUCI D., DISSEIX P., LEYMARIE J., TOURNIE E., TRASSOUDAINE A.
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy
crystal growth \& design, vol. 20, p. 2232
2020



ANDRE Y., ISIK GOKTAS N., MONIER G., HIJAZI H., MEHDI H., BOUGEROL C., BIDEUX L., TRASSOUDAINE A., PAGET D., LEYMARIE J., GIL E., ROBERT-GOUMET C., LAPIERRE R.
Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
Nano Express, vol. 1, p. 020019
2020 sep 04



2019
JAMADI O., REVERET F., SOLNYSHKOV D., DISSEIX P., LEYMARIE J., MALLET-DIDA L., BRIMONT C., GUILLET T., LAFOSSE X., BOUCHOULE S., SEMOND F., LEROUX M., ZUNIGA-PEREZ J., MALPUECH G.
Competition between horizontal and vertical polariton lasing in planar microcavities
physical review b, vol. 99, p. 085304
2019



MEHDI H., REVERET F., BOUGEROL C., ROBERT-GOUMET C., HOGGAN P., BIDEUX L., GRUZZA B., LEYMARIE J., MONIER G.
Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process
Applied Surface Science, vol. 495, p. 143586
2019



INV
REVERET F., JAMADI O., KREYDER G., DISSEIX P., MEDARD F., LEYMARIE J., MIHAILOVIC M., MOREAU A., SOLNYSHKOV D., DEPARIS C., LEROUX M., CAMBRIL E., BOUCHOULE S., GUILLET T., BRIMONT C., ZUNIGA-PEREZ J., MALPUECH G.
Polariton lasing in planar microcavities and waveguides up to room temperature
10th Russian-French Workshop on Nanosciences and Nanotechnologies
2019



AFF
ROBERT GOUMET C., MONIER G., MEHDI H., HOGGAN P., BIDEUX L., REVERET F., LEYMARIE J., MAHJOUB A., PELISSIER B.
Toward optimum N2 plasma nitriding process for GaAs(100) surface passivation
Journées Surfaces et Interfaces - JSI Nancy, Janvier 2019
2019



2018
ACL
ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., REVERET F., GIL E., MEDARD F., LEYMARIE J., JEAN T., DUBROVSKII V., TRASSOUDAINE A.
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red
Nanotechnology, vol. 29, p. 465602
2018



JAMADI O., REVERET F., DISSEIX P., MEDARD F., LEYMARIE J., MOREAU A., SOLNYSHKOV D., DEPARIS C., LEROUX M., CAMBRIL E., BOUCHOULE S., ZUNIGA-PEREZ J., MALPUECH G.
Edge-emitting polariton laser and amplifier based on a ZnO waveguide
Light: Science & Applications, vol. 7, p. 84
2018



COM
JAMADI O., DEPARIS C., REVERET F., BOUCHOULE S., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., LEROUX M., ZUNIGA-PEREZ J.
Monolithic ZnO optical microcavities : from materials science to room-temperature polariton laser
SPIE Photonics West
2018



ZUNIGA-PEREZ J., JAMADI AND  CATHERINE DEPARIS O., REVERET F., LAFOSSE X., BOUCHOULE AND  MATHIEU LEROUX S., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J.
Room-temperature edge-emitting ZnO polariton lasers based on monolithic waweguides
19th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN)
2018



AVIT G., ZEGHOUANE M., ANDRE Y., BOUGEROL C., GIL E., CASTELLUCI D., FERRET P., ROCHE E., LEYMARIE J., MEDARD F., DUBROVSKI V., TRASSOUDAINE A.
Self-induced growth of InN nanowires and selective area growth of In(Ga)N nanowires with a controlled mole fraction by HVPE
ISGN 7th International Symposium on Growth of III-Nitrides, Varsovie, Pologne
2018



ZUNIGA-PEREZ J., JAMADI O., DEPARIS C., REVERET F., LAFOSSE X., BOUCHOULE S., LEROUX M., DISSEIX AND  FRANCOIS MEDARD P., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J.
ZnO monolithic waveguides : edge-emitting polariton lasers and amplifiers based on propagating polaritons
Photonic, Quantum, and Nonlinear Optics Workshop
2018



AFF
ANDRE Y., ZEGHOUANE M., AVIT G., ROCHE E., BOUGEROL C., LEYMARIE J., MEDARD F., MONIER G., REVERET F., CASTELLUCI D., DUBROVSKII V., GIL E., TRASSOUDAINE A.
Hydride Vapor Phase Epitaxy of binary and ternary III-Nitride nanowires
Nanowire week conference 2018, Hamilton, Canada
2018



2017
AVIT G., ROCHE E., ZEGHOUANE M., ANDRE Y., GIL E., TRASSOUDAINE A., LEYMARIE J., MEDARD F.
Defect-free InGaN nanowires on silicon whatever the indium composition
12th International Conference on Nitride Semiconductors, Strasbourg
2017



ZEGHOUANE M., ANDRE Y., AVIT G., CASTELLUCI C., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2017, Lille
2017



JAMADI O., REVERET F., DISSEIX P., MEDARD F., MIHAILOVIC M., LAFOSSE X., BOUCHOULE S., SEMOND F., ZUNIGA-PEREZ J., LEYMARIE J.
Low threshold lasing in bulk GaN microcavity up to 400 K
18th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN)
2017



2016
ACL
REVERET F., BIGNET L., ZHIGANG W., LAFOSSE X., PATRIARCHE G., DISSEIX P., MEDARD F., MIHAILOVIC M., LEYMARIE J., ZUNIGA-PEREZ J., BOUCHOULE S.
High reflectance dielectric distributed bragg reflectors for near ultra-violet planar microcavities: sio2/hfo2versus sio2/sinx
journal of applied physics, vol. 120, p. 093107
2016



ZUNIGA-PEREZ J., KAPPEI L., DEPARIS C., REVERET F., GRUNDMANN M., DE PRADO E., JAMADI O., LEYMARIE J., CHENOT S., LEROUX M.
Homoepitaxial nonpolar (10-10) zno/znmgo monolithic microcavities: towards reduced photonic disorder
applied physics letters, vol. 108, p. 251904
2016



JAMADI O., REVERET F., MALLET E., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., LEYMARIE J., LAFOSSE X., BOUCHOULE S., LI F., LEROUX M., SEMOND F., ZUNIGA-PEREZ J.
Polariton condensation phase diagram in wide-band-gap planar microcavities: gan versus zno
physical review b, vol. 93, p. 115205
2016



INV
LEYMARIE J., JAMADI O., REVERET F., MALLET E., DISSEIX P., MEDARD F., MIHAILOVIC M., SOLNYSHKOV D., MALPUECH G., BOUCHOULE S., X L., LI F., LEROUX M., SEMOND F., ZUNIGA-PEREZ J.
Comparison of polariton condensation phase diagrams in GaN and ZnO planar microcavities
15èmes Journées de la Matière Condensée (JMC15), Bordeaux 22-26 août 2016, Société Française de Physique.
2016



AFF
ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., GIL E., LEYMARIE J., MEDARD F., REVERET F., .
Controlled Composition in Indium-rich InxGa1-xN nanowires grown by Hydride Vapor Phase Epitaxy
IWN International Workshop on Nitride Semiconductors, Orlando, Floride
2016



ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2016, Montpellier
2016



2015
ACL
LI X., SUNDARAM S., DISSEIX P., LE GAC G., BOUCHOULE S., PATRIARCHE G., REVERET F., LEYMARIE J., EL GMILI Y., MOUDAKIR T., GENTY F., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
Algan-based mqws grown on a thick relaxed algan buffer on aln templates emitting at 285 nm
optical materials express, vol. 5, p. 380
2015



LI X., SUNDARAM S., EL GMILI Y., GENTY F., BOUCHOULE S., PATRIACHE G., DISSEIX P., REVERET F., LEYMARIE J., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
Movpe grown periodic aln/baln heterostructure with high boron content
journal of crystal growth, vol. 414, p. 119
2015



REVERET F., ANDRE Y., GOURMALA O., LEYMARIE J., MIHAILOVIC M., LAGARDE D., GIL E., CASTELLUCI D., TRASSOUDAINE A.
Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy
Journal of Crystal Growth, vol. 421, p. 27--32
2015



LI X., LE GAC G., BOUCHOULE S., EL GMILI Y., PATRIARCHE G., SUNDARAM S., DISSEIX P., REVERET F., LEYMARIE J., STREQUE J., GENTY F., SALVESTRINI J., DUPUIS R., LI X., VOSS P., OUGAZZADEN A.
Structural and optical investigations of algan mqws grown on a relaxed algan buffer on aln templates for emission at 280 nm
journal of crystal growth, vol. 432, p. 37
2015



COM
LE GAC G., LI X., SUNDARAM S., EL GMILI Y., MOUDAKIR T., DISSEIX P., REVERET F., LAGARDE D., LEYMARIE J., BOUCHOULE S., PATRIARCHE G., GENTY F., SALVESTRINI J., DUPUIS R., VOSS P., OUGAZZADEN A.
Algan-based mqws emitting at 280nm for vertical cavity surface emitting lasers
Optics infobase conference papers
2015



AFF
ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015



ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., BOUGEROL C., DUBROVSKI V., DUSSAIGNE A., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015



ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2015, Grenoble
2015



2014
ACL
MALLET E., REVERET F., DISSEIX P., SHUBINA T., LEYMARIE J.
Influence of excitonic oscillator strengths on the optical properties of gan and zno
physical review b - condensed matter and materials physics, vol. 90, p. 045204
2014



ZUNIGA-PEREZ J., MALLET E., HAHE R., RASHID M., BOUCHOULE S., BRIMONT C., DISSEIX P., DUBOZ J., GOMME G., GUILLET T., JAMADI O., LAFOSSE X., LEROUX M., LEYMARIE J., LI F., REVERET F., SEMOND F.
Patterned silicon substrates: a common platform for room temperature gan and zno polariton lasers
applied physics letters, vol. 104, p. 241113
2014



LANTY G., JEMLI K., WEI Y., LEYMARIE J., EVEN J., LAURET J., DELEPORTE E.
Room-temperature optical tunability and inhomogeneous broadening in 2d-layered organic-inorganic perovskite pseudobinary alloys
journal of physical chemistry letters, vol. 5, p. 3958
2014



AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
Nano Letters, vol. 14, p. 559--562
2014



ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure
SPIE
2014



COM
RAMDANI R., TRASSOUDAINE A., AVIT G., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., CASTELLUCI D.
Fast Growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy
IWNS International Workshop on Nitride Semiconductors, Wroclaw Pologne
2014



2013
ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride vpe: the unexpected process for the fast growth of gaas and gan nanowires with record aspect ratio and polytypism-free crystalline structure
micro/nano materials, devices, and systems
2013



1999
ACL
ROBERT C., GIL E., CADORET R., CASTELLUCI D., LEYMARIE J., VASSON A., VASSON A., BIDEUX L., GRUZZA B.
Epitaxial growth of inasxp1-x/inp quantum wells by hvpe
applied surface science, vol. 142, p. 637--641
1999



1994
PIFFAULT N., GIL E., LEYMARIE J., MONIER C., CLARK S., ANDERSON M., CADORET R., VASSON A., VASSON A.
Epitaxial-growth and kinetic-study of mismatched (ga,in)as/inp layers grown by hydride vapor-phase epitaxy
journal of crystal growth, vol. 135, p. 11--22
1994



1993
DISSEIX P., LEYMARIE J., VASSON A., VASSON A., BANVILLET H., GIL E., PIFFAULT N., CADORET R.
Photoluminescence studies in strained inas/inp quantum-wells grown by hydride vapor-phase epitaxy
semiconductor science and technology, vol. 8, p. 1666--1670
1993



1991
GIL E., BANVILLET H., PIFFAULT N., CADORET R., FERDJANI K., LEYMARIE J., VASSON A., VASSON A., TABATA A., BENYATTOU T., GUILLOT G.
Inas/inp strained quantum wells growth by hydride vapor phase epitaxy and photoluminescence studies
journal of electrochemical society, vol. 138, p. 238--248
1991





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