Langues

Research laboratory

UMR 6602 - UCA/CNRS/SIGMA

Membres - PHOTON

Hoggan Philip Eric


Photo
Fonction : Permanent (UCA)
Location : EUPI Bat. 3/4/L
Team : Minamat-Surfaces (PHOTON)
NUC section : 28
Phone : +33473405170



Associated publications :
40 publications found


2019
ACL
PEREZ J., CESCO AND  C.J. ALTURRIA LANZARDO J., ZACCARI D., ORTIZ F., SOLTERMANN A., E. HOGGAN P.
Considering a mixed atomic basis set composed of only 1s STO and 1s GTO in molecular calculations
Chemistry Research Journal, vol. 4, p. 60--66
2019



MONIER G., HOGGAN P., BIDEUX L., PAGET D., MEHDI H., KUBSKY S., DUMAS P., ROBERT-GOUMET C.
DFT and experimental FTIR investigations of early stages of (001) and (111)B GaAs surface nitridation
Applied Surface Science, vol. 465, p. 787--794
2019



O. SHARMA R., HOGGAN P.
Physisorption Energy of H and H2 on clean Pt(111) as a useful surface energy reference in Quantum Monte Carlo calculation.
Advances in Quantum Chemistry, vol. 79, p. 1--15
2019



HIJAZI H., MONIER G., GIL E., TRASSOUDAINE A., BOUGEROL C., LEROUX C., CASTELLUCCI D., ROBERT-GOUMET C., HOGGAN P., ANDRE Y., ISIK GOKTAS N., LAPIERRE R., DUBROVSKII V.
Si doping of vapor–liquid–solid gaas nanowires: n-type or p-type?
Nano Letters, vol. 19, p. 4498--4504
2019 jun



MEHDI H., REVERET F., BOUGEROL C., ROBERT-GOUMET C., HOGGAN P., BIDEUX L., GRUZZA B., LEYMARIE J., MONIER G.
Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process
Applied Surface Science, vol. 495, p. 143586
2019



INV
HOGGAN P.
QMC for the Water gas shift for hydrogen synthesis on Pt(111)
To be defined
2019



AFF
ROBERT GOUMET C., MONIER G., MEHDI H., HOGGAN P., BIDEUX L., REVERET F., LEYMARIE J., MAHJOUB A., PELISSIER B.
Toward optimum N2 plasma nitriding process for GaAs(100) surface passivation
Journées Surfaces et Interfaces - JSI Nancy, Janvier 2019
2019



2018
ACL
HOGGAN P.
Analytical evaluation of relativistic molecular integrals. I. Auxiliary functions
Rend. Fis. Acc. Lincei, vol. 29, p. 191
2018



HOGGAN P.
Analytical evaluation of relativistic molecular integrals. II. Computational aspect for relativistic molecular auxiliary functions.
Rend. Fis. Acc. Lincei, vol. 30, p. 1
2018



ROBERT-GOUMET C., MEHDI H., MONIER G., HOGGAN P., BIDEUX L., DUBROVSKII V.
Combined angle-resolved x-ray photoelectron spectroscopy, density functional theory and kinetic study of nitridation of gallium arsenide
applied surface science, vol. 427, p. 662--669
2018 jan



HOGGAN P.
Local NMR susceptibility and nuclear shielding tensors.
Advances in Quantum Chemistry, vol. 76, p. 169
2018



HOGGAN P.
Quantum Monte Carlo Calculations for Industrial Catalysts: Accurately Evaluating the H2 Dissociation Reaction Barrier on Pt(111)
Advances in Quantum Chemistry, vol. 76, p. 273
2018



ACTI
HOGGAN P.
Quantum Monte Carlo: The method. Application to chemically accurate reaction activation barrier evaluation on metal catalysts.
. J. Lasers, Optics and Photonics, vol. 5, p. 26--59
2018



INV
HOGGAN P.
Breakthroughs in Quantum Chemistry
Quantum Laser Fields
2018



HOGGAN P.
Quantum Monte Carlo: The method. Application to chemically accurate reaction activation barrier evaluation on metal catalysts.
Quantum Laser Fields
2018



COM
MONIER G., BIDEUX L., GRUZZA B., HOGGAN P., MEHDI H., HIJAZI H., ROBERT-GOUMET C.
Global study of self-limited plasma nitridation process for GaAs(100) surface passivation
7th International Conference NANOSEA NANO-structures and nanomaterials SELf-Assembly
2018



HOGGAN P.
Quantum Monte Carlo: The method. Application to chemically accurate reaction activation barrier evaluation on metal catalysts.
To be defined
2018



AFF
MEHDI H., MONIER G., ROBERT GOUMET C., HOGGAN P., BIDEUX L., REVERET F., VARENNE C., KACHA A., MAHJOUB A., PELISSIER B.
N2 plasma passivation of GaAs(100) surface and air exposure study of GaN/GaAs structures
Journées spectroscopies Electroniques, Janvier 2018, Strasbourg
2018



MEHDI H., MONIER G., ROBERT GOUMET C., BIDEUX L., HOGGAN P., REVERET F., VARENNE C., KACHA A., MAHJOUB A., PELISSIER B.
Passivation par voie plasma N2 de la surface de GaAs(100) et étude de l’oxydation de la structures GaN/GaAs
Journees Surfaces et Interfaces (JSI2018), Janvier 2018, Strasbourg
2018



2017
ACL
DOBLHOFF-DIER K., MEYER J., HOGGAN P., KROES G.
Quantum Monte Carlo Calculations on a Benchmark Molecule–Metal Surface Reaction: H2 + Cu(111)
J. Chem. Theory Comput, vol. 13, p. 3208--3219
2017



HOGGAN P., BLEL S., B.H. HAMMOUDA A., MAHJOUB B., OUJIA P.
Scaling analysis of Self-assembled structures and related morphological information in epitaxial growth
Superlattices and Microstructures., vol. 102, p. 155--165
2017



COM
MONIER G., BIDEUX L., ROBERT-GOUMET C., HOGGAN P., PAGET D., KUBSKY S., DUMAS P.
In situ ATR-FTIR investigations of early stages of GaAs (001) and (111)B surface nitridation
ECASIA'17 European Conference on Applications of Surface and Interface Analysis
2017



2016
ACL
HOGGAN P., PEREZ J., BOUFERGUENE A.
An Application of the Gaussian Transform for Approximating Some Bessel Functions and Multicenter Integrals Involving 1s Slater-Type Orbitals
Adv. Quantum Chem, vol. 73, p. 139--144
2016



DOBLHOFF-DIER K., MEYER J., HOGGAN P., KROES G., K WAGNER L.
Diffusion Monte Carlo for accurate dissociation energies of 3d transition metal containing molecules
J. Chem. Theory Comput., vol. 12, p. 2583--2597
2016



BAGCI A., HOGGAN P.
Solution of the Dirac equation using the Rayleigh-Ritz method: Flexible basis coupling large and small components. Results for one-electron systems
Phys. Rev. E, vol. 94, p. 013302
2016



AP
ABSI N., HOGGAN P.
Quantum Monte Carlo investigation of two catalytic reaction paths for hydrogen synthesis on Pt(111).
ACS S.Tanaka, L. Mitas, P-O Roy
2016



2015
ACL
BAGCI A., HOGGAN P.
Benchmark values for molecular three-center integrals arising in the Dirac equation
Phys. Rev. E, vol. 92, p. 043301
2015



BAGCI A., HOGGAN P.
Benchmark values for molecular two-electron integrals arising from the Dirac equation
Phys. Rev. E, vol. 91, p. 023303
2015



ACTI
ABSI N., HOGGAN P.
Theory and simulation of selective hydrocarbon oxidation at copper surfaces: Part I methane mild oxidation to methanol, formaldehyde and formic acid
Mediterranean Journal of Chemistry, vol. 1, p. 33--40
2015



ABSI N., HOGGAN P.
Theory and simulation of selective hydrocarbon oxidation at copper surfaces: Part II short-chain alkene expoxidation and bi-reactions
Mediterranean Journal of Chemistry, vol. 1, p. 41--45
2015



INV
HOGGAN P.
Precise Quantum Monte Carlo simulations of H2-metal interactions.
ACS Symposium 1234
2015



2014
ACL
GHOMARI R., BOUFERGUENE A., HOGGAN P., MEKELLECHE S.
A Density Functional Theory Study of the Adsorption of 2-Cyclohexenone on Rh(111)
Adv. Quantum Chem., vol. 68, p. 175--190
2014



SIDI A., PINCHON D., HOGGAN P.
Asymptotic Expansions of Barnett–Coulson–Löwdin Functions of High Order
Adv. Quantum Chem, vol. 68, p. 43--76
2014



BAGCI A., HOGGAN P.
Performance of numerical approximation on the calculation of overlap integrals with noninteger n-Slater orbitals
Phys. Rev. E, vol. 89, p. 053307
2014



HOGGAN P., BOUFERGUENE A.
Quantum Monte Carlo for Activated Reactions at Solid Surfaces: Time Well Spent on Stretched Bonds
International Journal of Quantum Chemistry, vol. 114, p. 1150--1156
2014



HOGGAN P., BOUFERGUENE A.
Relative Advantages of Quantum Monte Carlo Simulation for Changing Electron Correlation: CO Reactions on Copper and Platinum Catalysts
Adv. Quantum Chem, vol. 68, p. 89--103
2014



ANDRE Y., LEKHAL K., HOGGAN P., AVIT G., CADIZ F., ROWE A., PAGET D., PETIT E., LEROUX C., TRASSOUDAINE A., REDA RAMDANI M., MONIER G., COLAS D., AJIB R., CASTELLUCI D., GIL E.
Vapor liquid solid-hydride vapor phase epitaxy (vls-hvpe) growth of ultra-long defect-free gaas nanowires: ab initio simulations supporting center nucleation
journal of chemical physics, vol. 140, p. 194706
2014 may



ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure
SPIE
2014



INV
HOGGAN P.
QMC for catalysis at metal surfaces.
None
2014 feb. 25



2013
ACTI
ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride vpe: the unexpected process for the fast growth of gaas and gan nanowires with record aspect ratio and polytypism-free crystalline structure
micro/nano materials, devices, and systems
2013





<== back to directory