MEHDI H., REVERET F., ROBERT-GOUMET C., BIDEUX L., GRUZZA B., HOGGAN P., LEYMARIE J., ANDRE Y., GIL E., PELISSIER B., LEVERT T., PAGET D., MONIER G.
Investigation of n2 plasma gaas surface passivation efficiency against air exposure: towards an enhanced diode
applied surface science, vol. 579, p. 152191
2022 apr


HIJAZI H., PAGET D., MONIER G., GRÉGOIRE G., LEYMARIE J., GIL E., CADIZ F., ROBERT-GOUMET C., ANDRÉ Y.
Charge and spin transport over record distances in GaAs metallic n -type nanowires
Physical Review B, vol. 103, p. 195314
2021 may


HIJAZI H., ZEGHOUANE M., JRIDI J., GIL E., CASTELLUCI D., DUBROVSKII V., BOUGEROL C., ANDRE Y., TRASSOUDAINE A.
Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy
Nanotechnology, vol. 32, p. 155601
2021 jan 25


GIL E., ANDRE Y.
Growth of long III-As NWs by hydride vapor phase epitaxy
Nanotechnology, vol. 32, p. 162002
2021 jan 29


GRÉGOIRE G., GIL E., ZEGHOUANE M., BOUGEROL C., HIJAZI H., CASTELLUCI D., DUBROVSKII V., TRASSOUDAINE A., GOKTAS N., LAPIERRE R., ANDRÉ Y.
Long catalyst-free InAs nanowires grown on silicon by HVPE
CrystEngComm, vol. 23, p. 378
2021 jan 18


GREGOIRE G., ZEGHOUANE M., GOOSNEY C., GOKTAS N., STAUDINGER P., SCHMID H., MOSELUND K., TALIERCIO T., TOURNIE E., TRASSOUDAINE A., GIL E., LAPIERRE R., ANDRE Y.
Selective area growth by hydride vapor phase epitaxy and optical properties of inas nanowire arrays
crystal growth & design, vol. 21, p. 5158
2021 jul


HIJAZI H., LEROY F., MONIER G., GRÉGOIRE G., GIL E., TRASSOUDAINE A., DUBROVSKII V., CASTELLUCI D., GOKTAS N., LAPIERRE R., ANDRÉ Y., ROBERT-GOUMET C.
Dynamics of Gold Droplet Formation on SiO 2 /Si(111) Surface
Journal of Physical Chemistry C, vol. 124, p. 11946--11951
2020 06


ZEGHOUANE M., ANDRE Y., AVIT G., JRIDI J., BOUGEROL C., COULON P., FERRET P., CASTELLUCI D., GIL E., SHIELDS P., DUBROVSKII V., TRASSOUDAINE A.
Formation of voids in selective area growth of InN nanorods in SiN x on GaN templates
Nano Futures, vol. 4, p. 025002
2020 may 29


ZEGHOUANE M., AVIT G., ANDRE Y., TALIERCIO T., FERRET P., GIL E., CASTELLUCI D., DISSEIX P., LEYMARIE J., TOURNIE E., TRASSOUDAINE A.
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy
crystal growth \& design, vol. 20, p. 2232
2020


ANDRE Y., ISIK GOKTAS N., MONIER G., HIJAZI H., MEHDI H., BOUGEROL C., BIDEUX L., TRASSOUDAINE A., PAGET D., LEYMARIE J., GIL E., ROBERT-GOUMET C., LAPIERRE R.
Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
Nano Express, vol. 1, p. 020019
2020 sep 04


ZEGHOUANE M., AVIT G., CORNELIUS T., SALOMON D., ANDRE Y., BOUGEROL C., TALIERCIO T., MEGUEKAM-SADO A., FERRET P., CASTELLUCI D., GIL E., TOURNIE E., THOMAS T., TRASSOUDAINE A.
Selective growth of ordered hexagonal InN nanorods
CrystEngComm, vol. 21, p. 2702
2019 apr 15


HIJAZI H., MONIER G., GIL E., TRASSOUDAINE A., BOUGEROL C., LEROUX C., CASTELLUCCI D., ROBERT-GOUMET C., HOGGAN P., ANDRE Y., ISIK GOKTAS N., LAPIERRE R., DUBROVSKII V.
Si doping of vapor–liquid–solid gaas nanowires: n-type or p-type?
Nano Letters, vol. 19, p. 4498--4504
2019 jun


ANDRE Y.
III-V nanowires grown by HVPE: what contribution in Nanoscience
NanoChina 2019, 8th International Conference on Nanoscience and Technology, Beijing, Chine
2019


ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., TOUNIE E., TALERCIO T., MEGUEKAM A., ROBIN Y., DUBROVSKII V., AMANO H., TRASSOUDAINE A.
Position and composition controlled high quality (In, Ga)N nanowires grown by HVPE
13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
2019


JRIDI J., ZEGHOUNE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., ROBIN Y., DUBROVSKII V., AMANO H., TRASSOUDAINE A.
Self-induced InGaN nanowires with a controlled InN mole fraction by HVPE
13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
2019


ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., REVERET F., GIL E., MEDARD F., LEYMARIE J., JEAN T., DUBROVSKII V., TRASSOUDAINE A.
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red
Nanotechnology, vol. 29, p. 465602
2018


ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., ROBIN Y., FERRET P., CASTELLUCI D., GIL E., DUBROVSKII V., HIROSHI A., TRASSOUDAINE A.
Compositional control of homogeneous InGaN nanowires with the In content up to 90%.
Nanotechnology, vol. 30, p. 044001
2018


AVIT G., ZEGHOUANE M., ANDRE Y., CASTELLUCI D., GIL E., SI-YOUNG B., AMANO H., TRASSOUDAINE A.
Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE.
Crystal Engineering Communication, vol. 20, p. 6207--6213
2018


HIJAZI H., DUBROVSKII V., MONIER G., GIL E., LEROUX C., AVIT G., TRASSOUDAINE A., BOUGEROL C., CASTELLUCI D., ROBERT GOUMET C., ANDRE Y.
Influence of silicon on the nucleation rate of GaAs nanowires on silicon substrates
The Journal of Physical Chemistry, vol. 122, p. 19230--19235
2018


ANDRE Y.
HVPE of binary and ternary III-Nitride nanostructures and nanowires
NSP 2018, International Workshop and School “Nanostructures for Photonics”, Peterhof Russie
2018 may


HIJAZI H., PAGET D., DUBROVSKI V., GIL E., MONIER G., CADIZ F., ALEKSEEV P., ULIN V., BERKOVITS V., LEROUX C., BOUGEROL C., TRASSOUDAINE A., CASTELLUCI D., ROBERT-GOUMET C., ANDRE Y.
Charge and spin diffusion in GaAs nanowires grown by HVPE
7th NANOSEA International Conference NANO-structures and nanomaterials SElf-Assembly, Carqueiranne (NanoSEA)
2018


ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., TRASSOUDAINE A.
Growth of (In,Ga)N nanowires with a controlled indium mole fraction by HVPE
4,5- 7th NANOSEA International Conference NANO-structures and nanomaterials SElf-Assembly, Carqueiranne (NanoSEA), France
2018


ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., TOURNIE E., TALERCIO T., MEGUEKAM A., ROBIN Y., DUBROVSKI V., AMANO H., TRASSOUDAINE A.
Self-induced and selective area growth of (In,Ga)N nanowires
IWN International workshop on Nitride Semiconductors, Kanazawa, Japan
2018


AVIT G., ZEGHOUANE M., ANDRE Y., BOUGEROL C., GIL E., CASTELLUCI D., FERRET P., ROCHE E., LEYMARIE J., MEDARD F., DUBROVSKI V., TRASSOUDAINE A.
Self-induced growth of InN nanowires and selective area growth of In(Ga)N nanowires with a controlled mole fraction by HVPE
ISGN 7th International Symposium on Growth of III-Nitrides, Varsovie, Pologne
2018


HIJAZI H., PAGET D., DUBROVSKII V., GIL E., MONIER G., CADIZ F., ALEKSEEV P., ULIN V., BERKOVITS V., LEROUX C., BOUGEROL C., TRASSOUDAINE A., CASTELLUCI D., ROBERT-GOUMET C., ANDRE Y.
Charge and spin transport in GaAs nanowires grown by HVPE
Nanowire week conference 2018, Hamilton, Canada
2018


HIJAZI H., MONIER G., PAGET D., CADIZ F., ALEKSEEV P., ULIN V., LEROUX D., BOUGEROL C., CASTELLUCI D., TRASSOUDAINE A., GIL E., DUBROVSKII V., ROBERT-GOUMET C., ANDRE Y.
Charge and spin transport in GaAs nanowires grown by HVPE
GDR PULSE, Atelier consacré à la préparation des substrats et des substrats structurés pour l’épitaxie, Villeneuve d’Ascq (IEMN)
2018


ZEGHOUANE M., ANDRE Y., AVIT Y., BOUGROL C., CASTELLUCI D., FERRET P., TRASSOUDAINE A.
Growth of InxGa1-xN nanowires by HVPE with the control of the indium composition x and the substrate homogeneity
Réunion annuelle 2018 GANEX, Toulouse, France
2018


ANDRE Y., ZEGHOUANE M., AVIT G., ROCHE E., BOUGEROL C., LEYMARIE J., MEDARD F., MONIER G., REVERET F., CASTELLUCI D., DUBROVSKII V., GIL E., TRASSOUDAINE A.
Hydride Vapor Phase Epitaxy of binary and ternary III-Nitride nanowires
Nanowire week conference 2018, Hamilton, Canada
2018


ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., DUBROVSKI V., TRASSOUDAINE A.
“HVPE growth of InGaN nanowires with a controlled indium mole fraction and selective area growth of well-ordered InN nano- and microwires
16 ème Journées Nano, Micro et Optoélectronique, JNMO, Agay
2018


DUBROVSKII V., BORIE S., DAGNET T., REYNES L., ANDRE Y., GIL E.
Nucleation and initial radius of self-catalyzed III-V nanowires
Journal of Crystal Growth, vol. 459, p. 194--197
2017


DONG Z., ANDRE Y., DUBROVSKII V., BOUGEROL C., LEROUX C., RAMDANI M., MONIER G., TRASSOUDAINE A., CASTELLUCI D., GIL E.
Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy
Nanotechnology, vol. 28, p. 125602
2017


ANDRE Y., DONG Z., ROCHE E., AVIT G., DUBROVSKII V., BOUGEROL C., VARENNE C., AUDONNET F., FONTANILLE P., LEYMARIE J., MÉDARD F., MONIER G., REVERET F., CASTELLUCI D., TRASSOUDAINE A., GIL E.
Hydride Vapor Phase Epitaxy (HVPE) growth of III-V and III-Nitrides nanowires on silicon
Energy Materials Nanotechnology EMN Epitaxy
2017 11


ANDRE Y.
Hydride Vapor Phase Epitaxy (HVPE) growth of III-V and III-Nitrides nanowires on silicon
EMN Meeting on Epitaxy 2017, Barcelone, Espagne
2017 sep


ANDRE Y.
Hydride Vapor Phase Epitaxy growth of III-V nanostructures for high performance devices
8th International Conference and Exhibition on Lasers, Optics & Photonics 2017, Las Vegas USA
2017 nov


LEKHAL K., AVIT G., SI-YOUNG B., OUSSMAN B., ROCHE E., ANDRE Y., CASTELLUCI D., TRASSOUDAINE A., AMANO H.
III-Nitride based photovoltaic application on silicon: comparison between axial and core/shell nanowires devices
ICNS International Conference on Nitride Semiconductors, Strasbourg
2017


HIJAZI H., MONIER G., LEROUX C., DUBROVSKII V., GIL E., CASTELLUCI D., TRASSOUDAINE A., ROBERT-GOUMET C., ANDRE Y.
Catalyzed Growth of GaAs nanowires on Si(111) substrates by HVPE
Conférence plénière du GDR PULSE, Paris
2017


HIJAZI H., ANDRE Y., MONIER G., LEROUX C., AVIT G., CASTELLUCI D., BIDEUX L., TRASSOUDAINE A., GIL E., ROBERT-GOUMET C.
Croissance catalysée de nanofils de GaAs sur substrat de Si(111)
GDR PULSE, Atelier consacré aux techniques de caractérisations structurales, Nice
2017


AVIT G., ROCHE E., ZEGHOUANE M., ANDRE Y., GIL E., TRASSOUDAINE A., LEYMARIE J., MEDARD F.
Defect-free InGaN nanowires on silicon whatever the indium composition
12th International Conference on Nitride Semiconductors, Strasbourg
2017


ZEGHOUANE M., ROCHE E., AVIT G., ANDRE Y., TRASSOUDAINE A.
Defect-free InGaN nanowires on silicon whatever the indium composition
Defect-free InGaN nanowires on silicon whatever the indium composition
2017


ZEGHOUANE M., ANDRE Y., AVIT G., CASTELLUCI C., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2017, Lille
2017


AVIT G., ANDRE Y., BOUGEROL C., CASTELLUCI D., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., RAMDANI M., ROCHE E., TRASSOUDAINE A.
GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures
Crystal Growth and Design, vol. 16, p. 2509--2513
2016


TRASSOUDAINE A., ROCHE E., BOUGEROL C., ANDRE Y., AVIT G., MONIER G., RAMDANI M., GIL E., CASTELLUCI D., DUBROVSKII V.
Spontaneous formation of GaN/AlN core–shell nanowires on sapphire by hydride vapor phase epitaxy
Journal of Crystal Growth, vol. 454, p. 1--5
2016


DONG Z., ANDRE Y., DUBROVSKII V., BOUGEROL C., MONIER G., RAMDANI M., TRASSOUDAINE A., LEROUX C., CASTELLUCI D., GIL E.
Self-catalyzed growth of GaAs nanowires on silicon by HVPE
Proceedings International Conference Laser Optics, Saint Petersbourg, Russie, LO 2016
2016


ANDRE Y.
HVPE of III-Nitride nanostructures and nanowires towards optoelectronic devices
NSP 2016, International Workshop and School “Nanostructures for Photonics”, Peterhof Russie
2016 jul


DONG Z., ANDRE Y., DUBROVSKI V., BOUGEROL C., MONIER G., RAMDANI M., TRASSOUDAINE A., LEROUX C., GIL E.
Self-catalyzed growth of GaAs nanowires on silicon by HVPE
Laser Optics International Conference, St Petersbourg, Russie
2016


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., GIL E., LEYMARIE J., MEDARD F., REVERET F., .
Controlled Composition in Indium-rich InxGa1-xN nanowires grown by Hydride Vapor Phase Epitaxy
IWN International Workshop on Nitride Semiconductors, Orlando, Floride
2016


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2016, Montpellier
2016


REVERET F., ANDRE Y., GOURMALA O., LEYMARIE J., MIHAILOVIC M., LAGARDE D., GIL E., CASTELLUCI D., TRASSOUDAINE A.
Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy
Journal of Crystal Growth, vol. 421, p. 27--32
2015


GIL E., ANDRE Y., CADORET R., TRASSOUDAINE A.
Hydride VPE for current III-V and nitride semiconductor compound issues
Elsevier Thomas F. Kuech
2015


ANDRE Y.
Hydride Vapor Phase Epitaxy of III-V semiconductor nanostructures and nanowires on silicon
JSPS International Workshop 2015 CINAM Marseille
2015


ROCHE E., TRASSOUDAINE A., ANDRE Y., AVIT G., GIL E., CASTELLUCI D., BOUGEROL C., DUBROVSKI V.
(Ga,In)N nanostructures and nanowires grown by HVPE”
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., BOUGEROL C., DUBROVSKI V., DUSSAIGNE A., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDAR F., REVERET F., MONIER G., TRASSOUDAINE A.
(In,Ga)N Micro- and Nano-structures grown by Hydride Vapor Phase Epitaxy
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon, Novembre 2015
2015


DONG Z., ANDRE Y., GIL E., DUBROVSKII V., LEROUX C., RAMDANI M., VARENNE C., AUDONNET F., FONTANILLE P., TRASSOUDAINE A., CASTELLUCI D., HARMAND J.
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE
Workshop Nanowires, Barcelone, Espagne
2015


DONG Z., ANDRE Y., GIL E., DUBROVSKII V., LEROUX C., BOUGEROL C., RAMDANI M., VARENNE C., AUDONNET F., FONTANILLE P., TRASSOUDAINE A., CASTELLUCI D., HARMAND J.
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE
GDR PULSE School Epitaxy updates and promises, Porquerolles, Septembre 2015
2015


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., DISSEIX P., LEYMARIE J., MEDARD F., RAMDANI M., REVERET F., TRASSOUDAINE A.
HVPE growth and optical characterization of (In,Ga)N nanowires
Journées GaNeX 2015, Grenoble
2015


GIL E., DUBROVSKII V., AVIT G., ANDRE Y., LEROUX C., LEKHAL K., GRECENKOV J., TRASSOUDAINE A., CASTELLUCI D., MONIER G., RAMDANI M., ROBERT C., BIDEUX L., HARMAND J., GLAS F.
Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius
Nano Letters, vol. 14, p. 3938--3944
2014


AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
Nano Letters, vol. 14, p. 559--562
2014


ANDRE Y., LEKHAL K., HOGGAN P., AVIT G., CADIZ F., ROWE A., PAGET D., PETIT E., LEROUX C., TRASSOUDAINE A., REDA RAMDANI M., MONIER G., COLAS D., AJIB R., CASTELLUCI D., GIL E.
Vapor liquid solid-hydride vapor phase epitaxy (vls-hvpe) growth of ultra-long defect-free gaas nanowires: ab initio simulations supporting center nucleation
journal of chemical physics, vol. 140, p. 194706
2014 may


ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure
SPIE
2014


ANDRE Y.
Hydride Vapor Phase Epitaxy of III-V semiconductor nanostructures and nanowires on silicon
4th International Conference on Nanotek 2014, San Francisco USA
2014 dec


RAMDANI R., TRASSOUDAINE A., AVIT G., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., CASTELLUCI D.
Fast Growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy
IWNS International Workshop on Nitride Semiconductors, Wroclaw Pologne
2014


GIL E., ANDRE Y., RAMDANI M., FONTAINE C., TRASSOUDAINE A., CASTELLUCI D.
Record high-aspect-ratio gaas nano-grating lines grown by hydride vapor phase epitaxy (hvpe)
journal of crystal growth, vol. 380, p. 93--98
2013


ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride vpe: the unexpected process for the fast growth of gaas and gan nanowires with record aspect ratio and polytypism-free crystalline structure
micro/nano materials, devices, and systems
2013


MONIER G., BIDEUX L., ROBERT-GOUMET C., GRUZZA B., ANDRE Y., AVIT J., PETIT M., MENYHARD M., PAGET D., KUBSKY S.
High quality c-GaN ultra-thin film growth on GaAs (001): Passivating effect and initiation of cubic-GaN bulk structure growth
ECASIA'13 European Conference on Applications of Surface and Interface Analysis
2013


ANDRE Y., AVIT G., LEKHAL K., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., FONTANILLE P., PIERRE G., PAGET D., ROWE A., PETIT E., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications
E-MRS Spring Meeting, Starsbourg, France
2013


LEKHAL K., AVIT G., ANDRE Y., TRASSOUDAINE A., GIL E., VARENNE C., BOUGEROL C., MONIER G., CASTELLUCI D.
Catalyst-assisted hydride vapor phase epitaxy of gan nanowires: exceptional length and constant rod-like shape capability
nanotechnology, vol. 23, p. 405601
2012


ANDRE Y., TRASSOUDAINE A., GIL E., LEKHAL K., CHELDA-GOURMALA O., CASTELLUCI D., CADORET R.
Demonstration of crystal-vapor equilibrium leading to growth blockade of gan during selective area growth
journal of crystal growth, vol. 354, p. 135--141
2012


LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., AVIT G., CELLIER J., CASTELLUCI D.
Exceptional crystal-defined bunched and hyperbunched gan nanorods grown by catalyst-free hvpe
crystal growth & design, vol. 12, p. 2251--2256
2012


CHELDA-GOURMALA O., TRASSOUDAINE A., ANDRE Y., BOUCHOULE S., GIL E., TOURRET J., CASTELLUCI D., CADORET R.
Complete hvpe experimental investigations: cartography of sag gan towards quasi-substrates or nanostructures
journal of crystal growth, vol. 312, p. 1899--1907
2010


RAMDANI M., GIL E., LEROUX C., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., BIDEUX L., MONIER G., ROBERT-GOUMET C., KUPKA R.
Fast growth synthesis of gaas nanowires with exceptional length
nano letters, vol. 10, p. 1836--1841
2010


VU D., RAMDANI R., BANSROPUN S., GERARD B., GIL E., ANDRE Y., ROWE A., PAGET D.
Local spin injectors using gaas tips under light excitation
journal of applied physics, vol. 107, p. 093712
2010


VU D., ARSCOTT S., PEYTAVIT E., RAMDANI R., GIL E., ANDRE Y., BANSROPUN S., GERARD B., ROWE A., PAGET D.
Photoassisted tunneling from free-standing gaas thin films into metallic surfaces
physical review b, vol. 82, p. 115331
2010


TOURRET J., GOURMALA O., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
A complete crystallographic study of gan epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (sag-hvpe)
journal of crystal growth, vol. 311, p. 1460--1465
2009


TOURRET J., GOURMALA O., TRASSOUDAINE A., ANDRE Y., GIL E., CASTELLUCI D., CADORET R.
Low-cost high-quality gan by one-step growth
journal of crystal growth, vol. 310, p. 924--929
2008


ANDRE Y., TRASSOUDAINE A., TOURRET J., CADORET R., GIL E., CASTELLUCI D., AOUDE O., DISSEIX P.
Low dislocation density high-quality thick hydride vapour phase epitaxy (hvpe) gan layers
journal of crystal growth, vol. 306, p. 86--93
2007


RAMDANI R., GIL E., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., PAGET D., ROWE A., GERARD B.
Selective epitaxial growth of gaas tips for local spin injector applications
journal of crystal growth, vol. 306, p. 111--116
2007