MEHDI H., REVERET F., ROBERT-GOUMET C., BIDEUX L., GRUZZA B., HOGGAN P., LEYMARIE J., ANDRE Y., GIL E., PELISSIER B., LEVERT T., PAGET D., MONIER G.
Investigation of n2 plasma gaas surface passivation efficiency against air exposure: towards an enhanced diode
applied surface science, vol. 579, p. 152191
2022 apr


HIJAZI H., PAGET D., MONIER G., GRÉGOIRE G., LEYMARIE J., GIL E., CADIZ F., ROBERT-GOUMET C., ANDRÉ Y.
Charge and spin transport over record distances in GaAs metallic n -type nanowires
Physical Review B, vol. 103, p. 195314
2021 may


HIJAZI H., ZEGHOUANE M., JRIDI J., GIL E., CASTELLUCI D., DUBROVSKII V., BOUGEROL C., ANDRE Y., TRASSOUDAINE A.
Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy
Nanotechnology, vol. 32, p. 155601
2021 jan 25


GIL E., ANDRE Y.
Growth of long III-As NWs by hydride vapor phase epitaxy
Nanotechnology, vol. 32, p. 162002
2021 jan 29


GRÉGOIRE G., GIL E., ZEGHOUANE M., BOUGEROL C., HIJAZI H., CASTELLUCI D., DUBROVSKII V., TRASSOUDAINE A., GOKTAS N., LAPIERRE R., ANDRÉ Y.
Long catalyst-free InAs nanowires grown on silicon by HVPE
CrystEngComm, vol. 23, p. 378
2021 jan 18


GREGOIRE G., ZEGHOUANE M., GOOSNEY C., GOKTAS N., STAUDINGER P., SCHMID H., MOSELUND K., TALIERCIO T., TOURNIE E., TRASSOUDAINE A., GIL E., LAPIERRE R., ANDRE Y.
Selective area growth by hydride vapor phase epitaxy and optical properties of inas nanowire arrays
crystal growth & design, vol. 21, p. 5158
2021 jul


GIL E.
Hydride VPE: the versatile and low-cost process for the fast growth of III-V planar heterostructures and 3D nanostructures with record aspect ratio
Nanostructures for Photonics
2021


HIJAZI H., LEROY F., MONIER G., GRÉGOIRE G., GIL E., TRASSOUDAINE A., DUBROVSKII V., CASTELLUCI D., GOKTAS N., LAPIERRE R., ANDRÉ Y., ROBERT-GOUMET C.
Dynamics of Gold Droplet Formation on SiO 2 /Si(111) Surface
Journal of Physical Chemistry C, vol. 124, p. 11946--11951
2020 06


ZEGHOUANE M., ANDRE Y., AVIT G., JRIDI J., BOUGEROL C., COULON P., FERRET P., CASTELLUCI D., GIL E., SHIELDS P., DUBROVSKII V., TRASSOUDAINE A.
Formation of voids in selective area growth of InN nanorods in SiN x on GaN templates
Nano Futures, vol. 4, p. 025002
2020 may 29


ZEGHOUANE M., AVIT G., ANDRE Y., TALIERCIO T., FERRET P., GIL E., CASTELLUCI D., DISSEIX P., LEYMARIE J., TOURNIE E., TRASSOUDAINE A.
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy
crystal growth \& design, vol. 20, p. 2232
2020


ANDRE Y., ISIK GOKTAS N., MONIER G., HIJAZI H., MEHDI H., BOUGEROL C., BIDEUX L., TRASSOUDAINE A., PAGET D., LEYMARIE J., GIL E., ROBERT-GOUMET C., LAPIERRE R.
Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
Nano Express, vol. 1, p. 020019
2020 sep 04


ZEGHOUANE M., AVIT G., CORNELIUS T., SALOMON D., ANDRE Y., BOUGEROL C., TALIERCIO T., MEGUEKAM-SADO A., FERRET P., CASTELLUCI D., GIL E., TOURNIE E., THOMAS T., TRASSOUDAINE A.
Selective growth of ordered hexagonal InN nanorods
CrystEngComm, vol. 21, p. 2702
2019 apr 15


HIJAZI H., MONIER G., GIL E., TRASSOUDAINE A., BOUGEROL C., LEROUX C., CASTELLUCCI D., ROBERT-GOUMET C., HOGGAN P., ANDRE Y., ISIK GOKTAS N., LAPIERRE R., DUBROVSKII V.
Si doping of vapor–liquid–solid gaas nanowires: n-type or p-type?
Nano Letters, vol. 19, p. 4498--4504
2019 jun


GIL E.
Shaping 3D (nano)structures: back to basics of crystallogenesis - Strengths and weaknesses of CVD/VPE and MBE
EMN Epitaxy 2019, Amsterdam, Juin 2019
2019


ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., TOUNIE E., TALERCIO T., MEGUEKAM A., ROBIN Y., DUBROVSKII V., AMANO H., TRASSOUDAINE A.
Position and composition controlled high quality (In, Ga)N nanowires grown by HVPE
13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
2019


JRIDI J., ZEGHOUNE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., ROBIN Y., DUBROVSKII V., AMANO H., TRASSOUDAINE A.
Self-induced InGaN nanowires with a controlled InN mole fraction by HVPE
13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
2019


ROCHE E., ANDRE Y., AVIT G., BOUGEROL C., CASTELLUCI D., REVERET F., GIL E., MEDARD F., LEYMARIE J., JEAN T., DUBROVSKII V., TRASSOUDAINE A.
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red
Nanotechnology, vol. 29, p. 465602
2018


ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., ROBIN Y., FERRET P., CASTELLUCI D., GIL E., DUBROVSKII V., HIROSHI A., TRASSOUDAINE A.
Compositional control of homogeneous InGaN nanowires with the In content up to 90%.
Nanotechnology, vol. 30, p. 044001
2018


AVIT G., ZEGHOUANE M., ANDRE Y., CASTELLUCI D., GIL E., SI-YOUNG B., AMANO H., TRASSOUDAINE A.
Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE.
Crystal Engineering Communication, vol. 20, p. 6207--6213
2018


HIJAZI H., DUBROVSKII V., MONIER G., GIL E., LEROUX C., AVIT G., TRASSOUDAINE A., BOUGEROL C., CASTELLUCI D., ROBERT GOUMET C., ANDRE Y.
Influence of silicon on the nucleation rate of GaAs nanowires on silicon substrates
The Journal of Physical Chemistry, vol. 122, p. 19230--19235
2018


GIL E.
The use of vapour phase epitaxy technics: shaping 3D (nano)structures / HVPE
ITMO University, Workshop/October School, St Petersburg, Russie (tutoriel le 5 Octobre 2018)
2018


HIJAZI H., PAGET D., DUBROVSKI V., GIL E., MONIER G., CADIZ F., ALEKSEEV P., ULIN V., BERKOVITS V., LEROUX C., BOUGEROL C., TRASSOUDAINE A., CASTELLUCI D., ROBERT-GOUMET C., ANDRE Y.
Charge and spin diffusion in GaAs nanowires grown by HVPE
7th NANOSEA International Conference NANO-structures and nanomaterials SElf-Assembly, Carqueiranne (NanoSEA)
2018


ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., TRASSOUDAINE A.
Growth of (In,Ga)N nanowires with a controlled indium mole fraction by HVPE
4,5- 7th NANOSEA International Conference NANO-structures and nanomaterials SElf-Assembly, Carqueiranne (NanoSEA), France
2018


ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., TOURNIE E., TALERCIO T., MEGUEKAM A., ROBIN Y., DUBROVSKI V., AMANO H., TRASSOUDAINE A.
Self-induced and selective area growth of (In,Ga)N nanowires
IWN International workshop on Nitride Semiconductors, Kanazawa, Japan
2018


AVIT G., ZEGHOUANE M., ANDRE Y., BOUGEROL C., GIL E., CASTELLUCI D., FERRET P., ROCHE E., LEYMARIE J., MEDARD F., DUBROVSKI V., TRASSOUDAINE A.
Self-induced growth of InN nanowires and selective area growth of In(Ga)N nanowires with a controlled mole fraction by HVPE
ISGN 7th International Symposium on Growth of III-Nitrides, Varsovie, Pologne
2018


HIJAZI H., AVIT G., PAGET D., MONIER G., GIL E., DONG Z., MONIER G., ROBERT-GOUMET C., CASTELLUCI D., TRASSOUDAINE A., LEROUX C., DUBROVSKI V., ANDRE Y.
Charge and spin diffusion in gallium arsenide nanowires grown by HVPE
16 ème Journées Nano, Micro et Optoélectronique, JNMO, Agay
2018


HIJAZI H., MONIER G., PAGET D., CADIZ F., ALEKSEEV P., ULIN V., LEROUX D., BOUGEROL C., CASTELLUCI D., TRASSOUDAINE A., GIL E., DUBROVSKII V., ROBERT-GOUMET C., ANDRE Y.
Charge and spin transport in GaAs nanowires grown by HVPE
GDR PULSE, Atelier consacré à la préparation des substrats et des substrats structurés pour l’épitaxie, Villeneuve d’Ascq (IEMN)
2018


HIJAZI H., PAGET D., DUBROVSKII V., GIL E., MONIER G., CADIZ F., ALEKSEEV P., ULIN V., BERKOVITS V., LEROUX C., BOUGEROL C., TRASSOUDAINE A., CASTELLUCI D., ROBERT-GOUMET C., ANDRE Y.
Charge and spin transport in GaAs nanowires grown by HVPE
Nanowire week conference 2018, Hamilton, Canada
2018


HIJAZI H., PAGET D., DUBROVSKI V., CADIZ F., ALEKSEEV P., MONIER G., LEROUX C., BOUGEROL C., TRASSOUDAINE A., CASTELLUCI D., GIL E., TRASSOUDAINE A., CASTELLUCI D., ROBERT-GOUMET C., ANDRE Y.
Charge and spin transport in GaAs nanowires grown by HVPE
Nanowire week conference 2018, Hamilton, Canada
2018


ANDRE Y., ZEGHOUANE M., AVIT G., ROCHE E., BOUGEROL C., LEYMARIE J., MEDARD F., MONIER G., REVERET F., CASTELLUCI D., DUBROVSKII V., GIL E., TRASSOUDAINE A.
Hydride Vapor Phase Epitaxy of binary and ternary III-Nitride nanowires
Nanowire week conference 2018, Hamilton, Canada
2018


ZEGHOUANE M., AVIT G., ANDRE Y., BOUGEROL C., GIL E., FERRET P., CASTELLUCI D., DUBROVSKI V., TRASSOUDAINE A.
“HVPE growth of InGaN nanowires with a controlled indium mole fraction and selective area growth of well-ordered InN nano- and microwires
16 ème Journées Nano, Micro et Optoélectronique, JNMO, Agay
2018


DUBROVSKII V., BORIE S., DAGNET T., REYNES L., ANDRE Y., GIL E.
Nucleation and initial radius of self-catalyzed III-V nanowires
Journal of Crystal Growth, vol. 459, p. 194--197
2017


DONG Z., ANDRE Y., DUBROVSKII V., BOUGEROL C., LEROUX C., RAMDANI M., MONIER G., TRASSOUDAINE A., CASTELLUCI D., GIL E.
Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy
Nanotechnology, vol. 28, p. 125602
2017


ANDRE Y., DONG Z., ROCHE E., AVIT G., DUBROVSKII V., BOUGEROL C., VARENNE C., AUDONNET F., FONTANILLE P., LEYMARIE J., MÉDARD F., MONIER G., REVERET F., CASTELLUCI D., TRASSOUDAINE A., GIL E.
Hydride Vapor Phase Epitaxy (HVPE) growth of III-V and III-Nitrides nanowires on silicon
Energy Materials Nanotechnology EMN Epitaxy
2017 11


AVIT G., ANDRE A., GIL E., TRASSOUDAINE A.
HVPE growth of III-V nanostructures for high performance devices.
8th International Conference and Exhibition on Lasers, Optics and Photonics, Las Vegas, USA, 15-17 November 2017
2017


GIL E.
High aspect ratio semiconductor (nano)structures: unexpected building blocks for new devices?
RFWNN 2017, 9th Russian-French Workshop on Nanosciences and Nanotechnologies, Suzdal, Russie, Octobre 2017
2017


HIJAZI H., MONIER G., LEROUX C., DUBROVSKII V., GIL E., CASTELLUCI D., TRASSOUDAINE A., ROBERT-GOUMET C., ANDRE Y.
Catalyzed Growth of GaAs nanowires on Si(111) substrates by HVPE
Conférence plénière du GDR PULSE, Paris
2017


HIJAZI H., ANDRE Y., MONIER G., LEROUX C., AVIT G., CASTELLUCI D., BIDEUX L., TRASSOUDAINE A., GIL E., ROBERT-GOUMET C.
Croissance catalysée de nanofils de GaAs sur substrat de Si(111)
GDR PULSE, Atelier consacré aux techniques de caractérisations structurales, Nice
2017


AVIT G., ROCHE E., ZEGHOUANE M., ANDRE Y., GIL E., TRASSOUDAINE A., LEYMARIE J., MEDARD F.
Defect-free InGaN nanowires on silicon whatever the indium composition
12th International Conference on Nitride Semiconductors, Strasbourg
2017


AVIT G., ANDRE Y., BOUGEROL C., CASTELLUCI D., DUSSAIGNE A., FERRET P., GAUGIRAN S., GAYRAL B., GIL E., LEE Y., RAMDANI M., ROCHE E., TRASSOUDAINE A.
GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures
Crystal Growth and Design, vol. 16, p. 2509--2513
2016


TRASSOUDAINE A., ROCHE E., BOUGEROL C., ANDRE Y., AVIT G., MONIER G., RAMDANI M., GIL E., CASTELLUCI D., DUBROVSKII V.
Spontaneous formation of GaN/AlN core–shell nanowires on sapphire by hydride vapor phase epitaxy
Journal of Crystal Growth, vol. 454, p. 1--5
2016


DONG Z., ANDRE Y., DUBROVSKII V., BOUGEROL C., MONIER G., RAMDANI M., TRASSOUDAINE A., LEROUX C., CASTELLUCI D., GIL E.
Self-catalyzed growth of GaAs nanowires on silicon by HVPE
Proceedings International Conference Laser Optics, Saint Petersbourg, Russie, LO 2016
2016


GIL E.
Growth of high aspect ratio semiconductor (nano)structures: back to basics of crystallogenesis
NSP 2016, St Petersburg, Juin 2016
2016


DONG Z., ANDRE Y., DUBROVSKI V., BOUGEROL C., MONIER G., RAMDANI M., TRASSOUDAINE A., LEROUX C., GIL E.
Self-catalyzed growth of GaAs nanowires on silicon by HVPE
Laser Optics International Conference, St Petersbourg, Russie
2016


ROCHE E., ANDRE Y., AVIT G., CASTELLUCI D., GIL E., LEYMARIE J., MEDARD F., REVERET F., .
Controlled Composition in Indium-rich InxGa1-xN nanowires grown by Hydride Vapor Phase Epitaxy
IWN International Workshop on Nitride Semiconductors, Orlando, Floride
2016


REVERET F., ANDRE Y., GOURMALA O., LEYMARIE J., MIHAILOVIC M., LAGARDE D., GIL E., CASTELLUCI D., TRASSOUDAINE A.
Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy
Journal of Crystal Growth, vol. 421, p. 27--32
2015


GIL E., ANDRE Y., CADORET R., TRASSOUDAINE A.
Hydride VPE for current III-V and nitride semiconductor compound issues
Elsevier Thomas F. Kuech
2015


GIL E.
Introduction to Hydride Vapor Phase Epitaxy: growth from chloride gaseous precursors - Basics: First step towards the shaping of high aspect ratio semiconductor 3D structures
ITMO University, Workshop/December School, St Petersburg, Russie (tutoriel le 15 décembre 2015)
2015


GIL E.
VLS growth from chloride gaseous precursors: fast atomistic growth process for polytypism-free III-V NWs with record aspect ratio
NWG 9th - Nanowire Growth Workshop 9th - Barcelone, October 2015
2015


ROCHE E., TRASSOUDAINE A., ANDRE Y., AVIT G., GIL E., CASTELLUCI D., BOUGEROL C., DUBROVSKI V.
(Ga,In)N nanostructures and nanowires grown by HVPE”
ISGN The 6th International Symposium on Growth of III-Nitrides, Hamamatsu, Japon
2015


DONG Z., ANDRE Y., GIL E., DUBROVSKII V., LEROUX C., RAMDANI M., VARENNE C., AUDONNET F., FONTANILLE P., TRASSOUDAINE A., CASTELLUCI D., HARMAND J.
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE
Workshop Nanowires, Barcelone, Espagne
2015


DONG Z., ANDRE Y., GIL E., DUBROVSKII V., LEROUX C., BOUGEROL C., RAMDANI M., VARENNE C., AUDONNET F., FONTANILLE P., TRASSOUDAINE A., CASTELLUCI D., HARMAND J.
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE
GDR PULSE School Epitaxy updates and promises, Porquerolles, Septembre 2015
2015


GIL E.
Des nanofils ? Ou comment sculpter la matière sans la toucher

2015


GIL E.
Les nanofils semiconducteurs : de minuscules objets pour de grands pas technologiques ?

2015


GIL E., DUBROVSKII V., AVIT G., ANDRE Y., LEROUX C., LEKHAL K., GRECENKOV J., TRASSOUDAINE A., CASTELLUCI D., MONIER G., RAMDANI M., ROBERT C., BIDEUX L., HARMAND J., GLAS F.
Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius
Nano Letters, vol. 14, p. 3938--3944
2014


AVIT G., LEKHAL K., ANDRE Y., BOUGEROL C., REVERET F., LEYMARIE J., GIL E., MONIER G., CASTELLUCI D., TRASSOUDAINE A.
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
Nano Letters, vol. 14, p. 559--562
2014


ANDRE Y., LEKHAL K., HOGGAN P., AVIT G., CADIZ F., ROWE A., PAGET D., PETIT E., LEROUX C., TRASSOUDAINE A., REDA RAMDANI M., MONIER G., COLAS D., AJIB R., CASTELLUCI D., GIL E.
Vapor liquid solid-hydride vapor phase epitaxy (vls-hvpe) growth of ultra-long defect-free gaas nanowires: ab initio simulations supporting center nucleation
journal of chemical physics, vol. 140, p. 194706
2014 may


ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride VPE: the unexpected process for fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure
SPIE
2014


GIL E.
Hydride VPE: the unexpected process for the fast growth of III-V nanowires with record aspect ratio and polytypism-free crystalline structure
INow 2014, St Petersbourg, Russie, Août 2014
2014


GIL E.
La VPE aux hydrures (HVPE) : le procédé inattendu pour la croissance rapide de nanofils III-V à rapport de forme inédit
Conférence plénière mixte GDR CNRS Pulse et GDR CNRS Nano - Toulouse, Octobre 2014
2014


RAMDANI R., TRASSOUDAINE A., AVIT G., ANDRE Y., GAYRAL B., BOUGEROL C., GIL E., REVERET F., LEYMARIE J., MONIER G., CASTELLUCI D.
Fast Growth synthesis of GaN nanostructures and nanowires by Hydride Vapor Phase Epitaxy
IWNS International Workshop on Nitride Semiconductors, Wroclaw Pologne
2014


GIL E., ANDRE Y., RAMDANI M., FONTAINE C., TRASSOUDAINE A., CASTELLUCI D.
Record high-aspect-ratio gaas nano-grating lines grown by hydride vapor phase epitaxy (hvpe)
journal of crystal growth, vol. 380, p. 93--98
2013


ANDRE Y., TRASSOUDAINE A., AVIT G., LEKHAL K., RAMDANI M., LEROUX C., MONIER G., VARENNE C., HOGGAN P., CASTELLUCI D., BOUGEROL C., REVERET F., LEYMARIE J., PETIT E., DUBROVSKII V., GIL E.
Hydride vpe: the unexpected process for the fast growth of gaas and gan nanowires with record aspect ratio and polytypism-free crystalline structure
micro/nano materials, devices, and systems
2013


ANDRE Y., AVIT G., LEKHAL K., GIL E., TRASSOUDAINE A., LEROUX C., BOUGEROL C., VARENNE C., MONIER G., FONTANILLE P., PIERRE G., PAGET D., ROWE A., PETIT E., CASTELLUCI D.
Hydride Vapor Phase Epitaxy of long III-V nanowires for light and biological applications
E-MRS Spring Meeting, Starsbourg, France
2013


LEKHAL K., AVIT G., ANDRE Y., TRASSOUDAINE A., GIL E., VARENNE C., BOUGEROL C., MONIER G., CASTELLUCI D.
Catalyst-assisted hydride vapor phase epitaxy of gan nanowires: exceptional length and constant rod-like shape capability
nanotechnology, vol. 23, p. 405601
2012


ANDRE Y., TRASSOUDAINE A., GIL E., LEKHAL K., CHELDA-GOURMALA O., CASTELLUCI D., CADORET R.
Demonstration of crystal-vapor equilibrium leading to growth blockade of gan during selective area growth
journal of crystal growth, vol. 354, p. 135--141
2012


LEKHAL K., ANDRE Y., TRASSOUDAINE A., GIL E., AVIT G., CELLIER J., CASTELLUCI D.
Exceptional crystal-defined bunched and hyperbunched gan nanorods grown by catalyst-free hvpe
crystal growth & design, vol. 12, p. 2251--2256
2012


CHELDA-GOURMALA O., TRASSOUDAINE A., ANDRE Y., BOUCHOULE S., GIL E., TOURRET J., CASTELLUCI D., CADORET R.
Complete hvpe experimental investigations: cartography of sag gan towards quasi-substrates or nanostructures
journal of crystal growth, vol. 312, p. 1899--1907
2010


RAMDANI M., GIL E., LEROUX C., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., BIDEUX L., MONIER G., ROBERT-GOUMET C., KUPKA R.
Fast growth synthesis of gaas nanowires with exceptional length
nano letters, vol. 10, p. 1836--1841
2010


VU D., RAMDANI R., BANSROPUN S., GERARD B., GIL E., ANDRE Y., ROWE A., PAGET D.
Local spin injectors using gaas tips under light excitation
journal of applied physics, vol. 107, p. 093712
2010


VU D., ARSCOTT S., PEYTAVIT E., RAMDANI R., GIL E., ANDRE Y., BANSROPUN S., GERARD B., ROWE A., PAGET D.
Photoassisted tunneling from free-standing gaas thin films into metallic surfaces
physical review b, vol. 82, p. 115331
2010


TOURRET J., GOURMALA O., ANDRE Y., TRASSOUDAINE A., GIL E., CASTELLUCI D., CADORET R.
A complete crystallographic study of gan epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (sag-hvpe)
journal of crystal growth, vol. 311, p. 1460--1465
2009


MARTINEZ O., ANGULO H., AVELLA M., GONZALEZ M., SANZ L., JIMENEZ J., GERARD B., GIL E.
Spectral image cathodoluminescence, photoluminescence and raman study of gaas layers grown on si substrates
superlattices and microstructures, vol. 45, p. 214--221
2009


TOURRET J., GOURMALA O., TRASSOUDAINE A., ANDRE Y., GIL E., CASTELLUCI D., CADORET R.
Low-cost high-quality gan by one-step growth
journal of crystal growth, vol. 310, p. 924--929
2008


MARTINEZ O., FELIPE SANZ L., JIMENEZ J., GERARD B., GIL E.
A study of conformal gaas on si layers by micro-raman and spectral imaging cathodoluminescence
advances in gan, gaas, sic and related alloys on silicon substrates
2008


ANDRE Y., TRASSOUDAINE A., TOURRET J., CADORET R., GIL E., CASTELLUCI D., AOUDE O., DISSEIX P.
Low dislocation density high-quality thick hydride vapour phase epitaxy (hvpe) gan layers
journal of crystal growth, vol. 306, p. 86--93
2007


RAMDANI R., GIL E., ANDRE Y., TRASSOUDAINE A., CASTELLUCI D., PAGET D., ROWE A., GERARD B.
Selective epitaxial growth of gaas tips for local spin injector applications
journal of crystal growth, vol. 306, p. 111--116
2007


MARTINEZ O., SANZ L., JIMENEZ J., MARTIN-MARTIN A., GERARD B., GIL E.
Stress distribution mapping of gaas on si conformal layers
journal of applied physics, vol. 101, p. 054901
2007


SAOUDI R., GIL E., TRASSOUDAINE A., CASTELLUCI D., RAMDANI R., DARRAUD C.
Fabrication of photonic crystals by anisotropic crystalline growth by the hydrides method
Journal de Physique IV
2006


TRASSOUDAINE A., CADORET R., GIL E.
Temperature influence on the growth of gallium nitride by hvpe in a mixed h-2/n-2 carrier gas
journal of crystal growth, vol. 260, p. 7--12
2004


MARTINEZ O., ARDILA A., AVELLA M., JIMENEZ J., ROSSI F., ARMANI N., GERARD B., GIL E.
Cathodoluminescence study of si complex formation in self-doped and intentionally si-doped gaas conformal layers
journal of physics-condensed matter
2004


FAYE D., LALLIER E., GRISARD A., GERARD B., GIL E.
Hvpe-based orientation-patterned gaas: added-value for non-linear applications
progress in compound semiconductor materials iii - electronic and optoelectronic applications
2004


GIL E., TRASSOUDAINE A., CASTELLUCI D., PIMPINELLI A., SAOUDI R., PARRIAUX O., MURAVAUD A., DARRAUD C.
Submicrometer scale growth morphology control for the making of photonic crystal structures
progress in compound semiconductor materials iii - electronic and optoelectronic applications
2004


GIL E., NAPIERALA J., PIMPINELLI A., CADORET R., TRASSOUDAINE A., CASTELLUCI D.
Direct condensation modelling for a two-particle growth system: application to gaas grown by hydride vapour phase epitaxy
journal of crystal growth, vol. 258, p. 14--25
2003


PIMPINELLI A., CADORET R., GIL E., NAPIERALA J., TRASSOUDAINE A.
Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces
journal of crystal growth, vol. 258, p. 1--13
2003


ARDILA A., MARTINEZ O., AVELLA M., SANZ L., JIMENEZ J., GERARD B., NAPIERALA J., GIL E.
Study of doping in gaas layers by local probe techniques: micro-raman, micro-photoluminescence and cathodoluminescence
symposium on spatially resolved characterization of local phenomena in materials and nanostructures
2003


GIL E., TRASSOUDAINE A., CASTELLUCI D., PIMPINELLI A., SAOUDI R., PARRIAUX O., MURAVAUD A., DARRAUD C.
Submicrometer scale growth morphology control: a new route for the making of photonic crystal structures?
conference on advances in optical thin films
2003


ARDILA A., MARTINEZ O., AVELLA M., JIMENEZ J., GIL E., GERARD B.
Optical characterization of gaas/si layers grown by the conformal method (confined lateral epitaxial growth)
journal of materials research, vol. 17, p. 1341--1349
2002


ARDILA A., MARTINEZ O., SANZ L., AVELLA M., JIMENEZ J., NAPIERALA J., GIL E., GERARD B.
Study of defects in conformal gaas/si layers by optical techniques and photoetching
materials science and engineering b-solid state materials for advanced technology, vol. 91, p. 70--74
2002


ARDILA A., MARTINEZ O., AVELLA M., JIMENEZ J., GERARD B., NAPIERALA J., GIL E.
Temperature dependence of the raman shift in gaas conformal layers grown by hydride vapor phase epitaxy
journal of applied physics, vol. 91, p. 5045--5050
2002


ARDILA A., MARTINEZ O., AVELLA M., JIMENEZ J., GERARD B., NAPIERALA J., GIL E.
Doping profiles of n-type gaas layers grown on si by the conformal method
conference on progress in semiconductor materials for optoelectron applications held at the 2001 mrs fall meeting
2002


NAPIERALA J., GIL E., CASTELLUCI D., PIMPINELLI A., GERARD B.
Control of the growth morphologies of gaas stripes grown on patterned substrates by hvpe
optical materials, vol. 17, p. 315--318
2001


GIL E., VIDECOQ A., NAPIERALA J., CASTELLUCI D., PIMPINELLI A., GERARD B., JIMENEZ J., AVELLA M.
High-quality gaas-related lateral junctions on si by conformal growth
optical materials, vol. 17, p. 267--270
2001


MARTINEZ O., AVELLA M., DE LA PUENTE E., GONZALEZ M., JIMENEZ J., GERARD B., GIL E.
Selective doping of conformal gaas layers grown by hydride vapour phase epitaxy on si substrates studied by spatially resolved optical techniques
materials science and engineering b-solid state materials for advanced technology, vol. 80, p. 197--201
2001


GIL E., NAPIERALA J., CASTELLUCI D., PIMPINELLI A., CADORET R., GERARD B.
Selective growth of gaas by hvpe: keys for accurate control of the growth morphologies
journal of crystal growth, vol. 222, p. 482--496
2001


ARDILA A., MARTINEZ O., AVELLA M., JIMENEZ J., GERARD B., NAPIERALA J., GIL E.
Self-doping near the seed/layer interface in conformal gaas layers grown on si
applied physics letters, vol. 79, p. 1270--1272
2001


AUJOL E., NAPIERALA J., TRASSOUDAINE A., GIL E., CADORET R.
Thermodynamical and kinetic study of the gan growth by hvpe under nitrogen
journal of crystal growth, vol. 222, p. 538--548
2001


MARTINEZ O., AVELLA M., DE LA PUENTE E., JIMENEZ J., GERARD B., GIL E.
Characterization of gaas conformal layers grown by hydride vapour phase epitaxy on si substrates by microphotoluminescence cathodoluminescence and microraman
journal of crystal growth, vol. 210, p. 198--202
2000


PHILIPPENS M., OLIGSCHLAEGER R., GERARD B., RUSHWORTH S., GIL E., NAPIERALA J., JIMENEZ J., HEIME K.
Conformal movpe of (al)gaas on silicon using alternative chlorine-containing precursors
journal of crystal growth, vol. 221, p. 225--230
2000


ROBERT C., GIL E., CADORET R., CASTELLUCI D., LEYMARIE J., VASSON A., VASSON A., BIDEUX L., GRUZZA B.
Epitaxial growth of inasxp1-x/inp quantum wells by hvpe
applied surface science, vol. 142, p. 637--641
1999


GIL E., NAPIERALA J., CASTELLUCI D., PIMPINELLI A., GERARD B., PRIBAT D.
Kinetic modelling of the selective epitaxy of gaas on patterned substrates by hvpe. application to the conformal growth of low defect density gaas layers on silicon
iii-v and iv-iv materials and processing challenges for highly integrated microelectronics and optoelectronics
1999


TRASSOUDAINE A., PARILLAUD O., GOUMET E., CASTELLUCI D., GIL E., CADORET R.
Kinetic study of si incorporation in inp by the hydride vapour phase epitaxy
journal of crystal growth, vol. 192, p. 402--409
1998


BIDEUX L., ROBERT C., MERLE S., GRUZZA B., GOUMET E., GIL E.
Some applications of elastic peak electron spectroscopy for semiconductor surface studies
surface and interface analysis, vol. 26, p. 903--907
1998


CADORET R., GIL E.
Gaas growth mechanisms of exact and misoriented 001 faces by the chloride method in h-2: surface diffusion, spiral growth, hcl and gacl3 desorption mechanisms
journal de physique i, vol. 7, p. 889--907
1997


PARILLAUD O., GIL E., GERARD B., ETIENNE P., PRIBAT D.
High quality inp on si by conformal growth
applied physics letters, vol. 68, p. 2654--2656
1996


GIL E., PIFFAULT N., CADORET R.
Kinetic expression and study of the growth-rate of mismatched (ga,in)as/inp structures grown by hydride vapor-phase epitaxy
journal of crystal growth, vol. 151, p. 80--90
1995


PIFFAULT N., GIL E., LEYMARIE J., MONIER C., CLARK S., ANDERSON M., CADORET R., VASSON A., VASSON A.
Epitaxial-growth and kinetic-study of mismatched (ga,in)as/inp layers grown by hydride vapor-phase epitaxy
journal of crystal growth, vol. 135, p. 11--22
1994


PARILLAUD O., PIFFAULT N., GIL E., CADORET R., GERARD B., PRIBAT D.
Defect free inp films on si substrates obtained by hydride vapor phase conformal growth
sixth International Conference on Indium Phosphide and Related Materials, IPRM’94
1994


GIL E., BANVILLET H., PIFFAULT N., CADORET R., FERDJANI K., LEYMARIE J., VASSON A., VASSON A., TABATA A., BENYATTOU T., GUILLOT G.
Inas/inp strained quantum wells growth by hydride vapor phase epitaxy and photoluminescence studies
journal of electrochemical society, vol. 138, p. 238--248
1991


BANVILLET H., GIL E., CADORET R., DISSEIX P., FERDJANI K., VASSON A., VASSON A., TABATA A., BENYATTOU T., GUILLOT G.
Optical investigation in ultrathin inas/inp quantum-wells grown by hydride vapor-phase epitaxy
journal of applied physics, vol. 70, p. 1638--1641
1991


MIHAILOVIC M., BANVILLET H., GRUZZA B., GIL E., CADORET R.
Transient stages during epitaxy of heterostructures on inp in a hvpe reactor. application to inp/inas/inp multiquantum wells growth
trans. tech. publications, vol. 36, p. 480--488
1991


MIHAILOVIC M., CADORET M., BANVILLET H., GIL E., CADORET R.
Epitaxial-growth of inp/inas/inp quantum-wells
superlattices and microstructures, vol. 8, p. 175--177
1990